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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
PA1857
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The PA1857 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
8
PACKAGE DRAWING (Unit: mm)
5 1 2, 3 4 5 6, 7 8 :Drain1 :Source1 :Gate1 :Gate2 :Source2 :Drain2
1.2 MAX. 1.00.05 0.25 3 +5 -3 0.10.05 0.5 0.6 +0.15 -0.1
FEATURES
* Low on-state resistance RDS(on)1 = 67.0 m MAX. (VGS = 10 V, ID = 2.0 A) RDS(on)2 = 86.0 m MAX. (VGS = 4.5 V, ID = 2.0 A) RDS(on)3 = 95.0 m MAX. (VGS = 4.0 V, ID = 2.0 A) * Low Ciss Ciss = 580 pF TYP. * Built-in G-S protection diode against ESD
1
4
0.145 0.055
3.15 0.15 3.0 0.1
6.4 0.2 4.4 0.1 1.0 0.2
ORDERING INFORMATION
PART NUMBER PACKAGE Power TSSOP8
0.65 0.27 +0.03 -0.08 0.8 MAX.
PA1857GR-9JG
0.1
0.10 M
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TA = 25C) Drain Current (pulse)
Note1 Note2 Note2
EQUIVALENT CIRCUIT
60 20 3.8 15.2 1.0 1.7 150 V V A A W W C C A mJ
Gate1 Gate Protection Diode Source1 Drain1 Drain2
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
Body Diode
Gate2 Gate Protection Diode Source2
Body Diode
Total Power Dissipation (1unit) Total Power Dissipation (2unit) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
-55 to +150 3.8 33
Note3 Note3
IAS EAS
Notes 1. PW 10 s, Duty Cycle 1% 2 2. TA = 25C Mounted on ceramic substrate of 50 cm x 1.1 mm 3. Starting Tch = 25C, VDD = 30 V, RG = 25 , VGS = 20 0 V Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. G15060EJ2V0DS00 (2nd edition) Date Published April 2001 NS CP(K) Printed in Japan
The mark 5 shows major revised points.
(c)
2001
PA1857
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = 48 V VGS = 10 V ID = 3.8 A IF = 3.8 A, VGS = 0 V IF = 3.8 A, VGS = 0 V di/dt = 100 A / s TEST CONDITIONS VDS = 60 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 2.0 A VGS = 10 V, ID = 2.0 A VGS = 4.5 V, ID = 2.0 A VGS = 4.0 V, ID = 2.0 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 30 V, ID = 2.0 A VGS = 10 V RG = 6 1.5 2.5 2.0 5.4 53 64 71 580 100 50 10 9 32 4 12 2 3 0.80 33 58 67.0 86.0 95.0 MIN. TYP. MAX. 10 10 2.5 UNIT
A A
V S m m m pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V 50
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG
VGS RL VDD VDS
90% 90% 10% 10%
VGS
Wave Form
0
10%
VGS(on)
90%
BVDSS IAS ID VDD VDS
VGS 0 = 1 s Duty Cycle 1%
VDS
VDS
Wave Form
0 td(on) ton
tr
td(off) toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50
RL VDD
2
Data Sheet G15060EJ2V0DS
PA1857
TYPICAL CHARACTERISTICS (TA = 25C)
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 2
PT - Total Power Dissipation - W
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 80 60 40 20 0
1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 25
2unit
dT - Derating Factor - %
Single Pulse Mounted on Ceramic Board of 50 cm2 x1.1 mm 2unit: PD (FET1) : PD (FET2) = 1 : 1
1unit
0
25 50 75 100 125 TA - Ambient Temperature - C
150
50
75
100
125
150
TC - Case Temperature - C
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
5
100
FORWARD BIAS SAFE OPERATING AREA
16
ID - Drain Current - A
RD V (@
o S(
ID(DC)
10 ms
10 0m DC s (
2u nit )
ID - Drain Current - A
10
n) GS
d ite V) Lim10 =
ID(pulse)
1m s
PW
=1 00 s
4.5 V 12
1
DC (
1u nit )
8
VGS = 10 V
4.0 V
0.1
Single Pulse Mounted on Ceramic Board of 50 cm2x1.1 mm PD (FET1) : PD (FET2) = 1 : 1
4
0.01 0.1
1.0
10.0
100.0
0 0
0.2
0.4
0.6
0.8
1.0
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS 100 10 VDS = 10 V
VGS(off) - Gate Cut-off Voltage - V
VDS - Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 3 VDS = 10 V ID = 1 mA
ID - Drain Current - A
1 0.1 0.01 0.001 0.0001
2.5
TA = 125C 25C 75C -25C
2
1.5
0.00001
0
1
2
3
4
1 -50
0
50
100
150
VGS - Gate to Source Voltage - V
Tch - Channel Temperature - C
Data Sheet G15060EJ2V0DS
3
PA1857
100
| yfs | - Forward Transfer Admittance - S
VDS = 10 V
RDS(on) - Drain to Source On-state Resistance - m
FORWARD TRANSFER ADMITTANCE Vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VGS = 4.0 V
160
10
120 TA = 125C 75C 80 25C -25C 40
1
0.10
TA = -25C 25C 75C 125C
0.010 0.01
0.1
1
10
100
0 0.01
0.1
1
10
100
ID - Drain Current - A
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - m
160 VGS = 4.5 V
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 160 VGS = 10 V
120 TA = 125C 80 75C 25C -25C 40
120 TA = 125C 80 75C 25C -25C 40
0 0.01
0 0.01 0.1 1 10 100 ID - Drain Current - A
0.1
1
10
100
ID - Drain Current - A
RDS (on) - Drain to Source On-state Resistance - m
130 ID = 2.0 A 110 4.5 V 90 70 50 30 10 -50 10 V VGS = 4.0 V
RDS (on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 150 ID = 2.0 A
125 100 75 50 25 0 0
0
50
100
150
2
4
6
8
10
12
14
16
18
20
Tch - Channel Temperature - C
VGS - Gate to Source Voltage - V
4
Data Sheet G15060EJ2V0DS
PA1857
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000
Ciss, Coss, Crss - Capacitance - pF
SWITCHING CHARACTERISTICS 100
td(on), tr, td(off), tf - Switching Time - ns
f = 1 MHz
td(off)
1000
Ciss
10
td(on) tr tf VDD = 30 V VGS(on) = 10 V RG = 6 1 ID - Drain Current - A 10
100
Coss
10 0.1
Crss 1 10 100
1 0.1
VDS - Drain to Source Voltage - V
SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100
IF - Source to Drain Current - A
REVERSE RECOVERY TIME vs. DRAIN CURRENT 100
trr - Reverse Recovery Time - ns
di/dt = 100 A/s VGS = 0 V
VGS = 0 V
10
1
10
0.1
0.01 0.4
0.6
0.8
1
1.2
1 0.1
1.0
10
100
VF(S-D) - Body Diode Forward Voltage - V
IF - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 12
VDS - Drain to Source Voltage - V
10 8 6 4 2 ID = 3.8 A 0 0 2 4 6 8 10 12 VDD = 48 V 30 V 12 V
QG - Gate Charge - nC
VGS - Gate to Source Voltage - V
Data Sheet G15060EJ2V0DS
5
PA1857
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 10
IAS - Single Avalanche Current - A
Energy Derating Factor - %
SINGLE AVALANCHE ENERGY DERATING FACTOR
120 100 80 60 40 20 0 25
VDD = 30 V RG = 25 VGS = 20 0 V IAS 3.8 A
IAS = 3.8 A
EAS = 33 mJ VDD = 30 V RG = 25 VGS = 20 0 V Starting Tch = 25C 100 1m 10m
1 10
50
75
100
125
150
L - Inductive Load - H
Starting Tch - Starting Channel Temperature - C
5
1000
rth(t) - Transient Thermal Resistance - C/W
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
Rth(ch-A) = 125C/W (1unit) Rth(ch-A) = 73.5C/W (2unit)
10
1
Single Pulse Mounted on Ceramic Board of 50 cm2 x1.1 mm 2unit: PD (FET1) : PD (FET2) = 1 : 1
0.01 0.0001
0.001
0.01
0.1
1
10
100
1000
PW - Pulse Width - s
6
Data Sheet G15060EJ2V0DS
PA1857
[MEMO]
Data Sheet G15060EJ2V0DS
7
PA1857
* The information in this document is current as of April, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4

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