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VUB 120 / 160
Three Phase Rectifier Bridge
with IGBT and Fast Recovery Diode for Braking System
VRRM = 1200/1600 V IdAVM = 121/157 A
Preliminary Data VRRM
V Type VRRM V Type
1200 VUB 120-12 NO1 1600 VUB 120-16 NO1 1200 VUB 160-12 NO1 1600 VUB 160-16 NO1
Symbol VRRM IdAVM IFSM I2t Ptot VCES VGE
IGBT
Test Conditions
Maximum Ratings VUB 120 VUB160
1200/1600 1200/1600 V
Rectifier Diodes
TC = 75C, sinusoidal 120 TVJ = 45C, TVJ = 150C, TVJ = 45C, TVJ = 150C, TC = 25C per diode TVJ = 25C to 150C Continuous TC = 25C, DC TC = 75C, DC TC = 75C, d = 0.5 tp = Pulse width limited by TVJM t = 10 ms, VR = 0 V t = 10 ms, VR = 0 V t = 10 ms, VR = 0 V t = 10 ms, VR = 0V
121 650 580 2110 1680 130 1200 20 100 71 56 200 400 1200 25 39 tbd 200 180 100 -40...+150 150 -40...+125
157 850 760 3610 2880 160 1200 20 150 106 85 300 600
A A A A A W V V A A A A W V A A A A A W C C C V~ V~
Features Soldering connections for PCB mounting Isolation voltage 3600 V~ Ultrafast diode Convenient package outline UL registered E 72873 Case and potting UL94 V-0 Thermistor
q q q q q q q
Applications
q
Drive Inverters with brake system
IC25 IC75 ICM Ptot
TC = 25C
Fast Recovery Diode
Advantages 2 functions in one package Easy to mount with two screws Suitable for wave soldering High temperature and power cycling capability
q q q q
VRRM IFAV IFRMS IFRM IFSM Ptot TVJ TVJM Tstg VISOL
TC = 75C, rectangular d = 0.5 TC = 75C, rectangular d = 0.5 TC = 75C, tP = 10 s, f = 5 kHz TVJ = 45C, TVJ = 150C, TC = 25C t = 10 ms t = 10 ms
Dimensions in mm (1 mm = 0.0394")
Md dS dA a Weight
Module
50/60 Hz IISOL 1 mA Mounting torque
t = 1 min t=1s (M5) (10-32 unf)
3000 3600 2-2.5 18-22 12.7 9.4 50 80
Nm lb.in. mm mm m/s2 g
0 31
Creep distance on surface Strike distance in air Maximum allowable acceleration typ.
Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions.
(c) 2000 IXYS All rights reserved
1-4
VUB 120 / 160
Symbol Test Conditions Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 0.3 5
VUB 120 VUB 160 VUB 120 VUB 160 VUB 120 VUB 160 VUB 120 VUB 160 VUB 120 VUB 160
IR VF VT0 rT RthJC RthJH VBR(CES) VGE(th) ICES
Rectifier Diodes Rectifier Diodes
VR = VRRM, VR = VRRM, IF = 150 A,
TVJ = 25C TVJ = 150C TVJ = 25C
mA mA V V V V mW mW
1.59 1.49 0.80 0.75 6.1 4.6
For power-loss calculations only TVJ = 150C per diode
1.0 K/W 0.8 K/W 1.3 K/W 1.1 K/W 1200 5 5 8 8 0.8 1.2 3 4.5 2.9 2.9 10 10 V V V mA mA mA mA V V ms ms
VGS = 0 V, IC = 3 mA IC = 20 mA IC = 30 mA TVJ = 25C, VCE = 1200 V
VUB 120 VUB 160 VUB 120 VUB 160 VUB 120 VUB 160 VUB 120 VUB 160
TVJ = 125C, VCE = 0,8 VCES VCEsat tSC
(SCSOA)
VGE = 15 V, IC = 50 A VGE = 15 V, IC = 75 A
VGE = 15 V, VCE = 720 V, TVJ = 125C, RG = 11 W, non repetitive VUB 120 RG = 7 W, non repetitive VUB 160 VGE = 15 V, VCE = 960 V, TVJ = 125C, Clamped Inductive load, L = 100 mH VUB 120 RG = 11 W RG = 7 W VUB 160 VCE = 25 V, f = 1 MHz, VGE = 0 V
VUB 120 VUB 160
RBSOA
IGBT
100 150 9 13.5 300 350 12 18 16 24
A A nF nF ns ns mJ mJ mJ mJ
Cies td(on) td(off) Eon Eoff RthJC RthJH IR
Fast Recovery Diode
VCE = 720 V, IC = 50/75 A VGE = 15 V, RG = 11/7 W Inductive load; L = 100 mH TVJ = 125C
VUB 120 VUB 160 VUB 120 VUB 160 VUB 120 VUB 160 VUB 120 VUB 160
0.32 K/W 0.21 K/W 0.45 K/W 0.30 K/W 4 0.75 7 2.55 1.65 18.2 16 40 18 60 mA mA V V mW A ns
VR VR IF
= VRRM, TVJ = 25C = 0,8 * VCES, TVJ = 125C = 30 A, TVJ = 25C
VF VT0 rT IRM trr RthJC RthJH
For power-loss calculations only TVJ = 150C IF IF = 30 A, -diF/dt = 240 A/ms, VR = 540 V = 1 A, -diF/dt = 100 A/ms, VR = 30 V
1.2 K/W 1.6 K/W
NTC
R25
Siemens S 891/2,2/+9
2.2
kW
(c) 2000 IXYS All rights reserved
2-4
VUB 120
300 W 250 Ptot 200 150 100 50 0 0 20 40 60 Id(AV)M 80 100 120 A 0 40 TA 80 120 C 160 RthKA [K/W] 0.1 0.3 0.5 0.7 1 1.5 3 100 Id(AV)M 80 60 40 20 0 0 40 80 140
A
120
TC
120 C 160
Fig. 1 Power dissipation versus direct output current and ambient temperature (Rectifier bridge)
Fig. 2 Maximum forward current versus case temperature (Rectifier bridge)
T =125C Eoff VJ tfi RG = 4.7W Eoff
200 TVJ = 25C A VGE = 15V 150 IC 100 VGE = 13V VGE = 11V
1.50 VCE(sat) IC = 100A 1.25 norm. IC = 50A 1.00
norm. under evaluation tfi
IC = 25A 50 VGE = 9V 0.75
0 0 2 4 VCE 6 V8
VGE = 15V 0.50 -50 -25 0 25 50 75 100 125 C 150 TVJ
A IC
Fig. 3 Output characteristics for braking (IGBT)
Fig. 4 Temperature dependence of output saturation voltage, normalized (IGBT)
Fig. 5 Turn-off energy per pulse and fall time in collector current, normalized (IGBT)
1.3 T =125C Eoff VJ IC = 25A tfi norm. to 4.7W 1.2 norm. Eoff under evaluation
D=0.1
200 A
IC
150
D=0.2
D=0.3
100
D=0.4 D=0.5 D=0.7
1.1
tfi 1.0
50
TK = 80C
0 0.0001
VUB 120
0.9 RG
0.001
0.01
0.1
1
tp
s
10
W
Fig. 6 Collector current dependence on pulse width and duty cycle (IGBT)
Fig.7 Turn-off energy per pulse and fall time on RG (IGBT)
(c) 2000 IXYS All rights reserved
3-4
VUB 120
200 100 A IC 10 IF 30 TVJ=150C TVJ=25C 3 2 10 TVJ=125C 0.1 0 RG= 11W 400 800 VCE 1200 V 0 0 1 2 VF 3 V 4 1 typ. 0 1 10 100 A/ms 1000 -diF/dt 50 A 40 Qr 4 IF = 30 A IF = 60 A IF = 30 A IF = 15 A 6
mC
5
TVJ=100C VR= 540 V max.
20 1
Fig. 8 Reverse baised safe operation area (IGBT)
Fig. 9 Forward current versus voltage drop (Fast Diode)
Fig. 10 Recovery charge versus -diF/dt (Fast Diode)
50 A 40
70 V 60 VFR 50 40 30 tFR 20 10 0 0 100 200 VFR
1.4
1.0
ms
1.2 1.0 0.8 0.6 0.4 TVJ=125C 0.2 IF = 30A tFR 0.0 300 400 A/ms 600 500 -diF/dt trr
ms
0.8
TVJ=100C VR= 540 V max. IF = 30 A IF = 60 A IF = 30 A IF = 15 A IRM
TVJ=100C VR= 540 V max. IF = 30 A IF = 60 A IF = 30 A IF = 15 A
0.6
30
typ.
0.4
20
0.2 typ. 0.0 0 100 200 300 400 A/ms 600 500 -diF/dt
10
0 0 100 200 300 400 A/ms 600 500 -diF/dt
Fig.11 Peak forward voltage and recovery time versus -diF/dt (Fast Diode)
1.4 1.2 1.0
Kf IRM
Fig.12 Recovery time versus -diF/dt (Fast Diode)
Fig.13 Peak reverse current versus -diF/dt (Fast Diode)
1.8 1.6 K/W ZthJK 1.4 1.2 1.0 0.8 QR 0.6 0.4 IGBT Fast Diode per Rectifier Diode
0.8 0.6 0.4 0.2 0.0 0 40 80
TVJ
0.2
120 C 160
0.0 0.001
VUB 120
0.01
0.1
1
10 t
s
100
Fig.14 Dynamic parameters versus junction temperature (Fast Diode)
Fig.15 Transient thermal impedance junction to heatsink ZthJK
(c) 2000 IXYS All rights reserved
4-4

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