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BB669/BB689... Silicon Tuning Diode For VHF 2-Band-hyperband-TV-tuners Very high capacitance ratio Low series resistance Excellent uniformity and matching due to "in-line" matching assembly procedure 1 BB669 BB689 BB689-02V 2 Type BB669 BB689 BB689-02V Package SOD323 SCD80 SC79 Configuration single single Single LS(nH) 1.8 0.6 0.6 Marking 1 EE E Maximum Ratings at TA = 25C, unless otherwise specified Parameter Diode reverse voltage Peak reverse voltage Forward current Operating temperature range Storage temperature (R 5k ) IF Top Tstg 20 -55 ... 150 -55 ... 150 mA C Symbol VR VRM Value 30 35 Unit V 1 Mar-27-2003 BB669/BB689... Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current VR = 30 V VR = 30 V, TA = 85 C IR 10 200 nA typ. max. Unit Electrical Characteristics at TA = 25C, unless otherwise specified Parameter AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz CT Symbol min. Values typ. max. Unit pF 51 39.6 2.6 2.5 56.5 43.4 2.8 2.7 20.9 15.5 0.85 61.5 47.2 3 2.9 23.2 17 2 % Capacitance ratio VR = 1 V, VR = 28 V, f = 1 MHz CT1 /CT28 CT2 /CT25 CT/CT 18 14.5 - - Capacitance ratio VR = 2 V, VR = 25 V, f = 1 MHz VR = 1 V, VR = 28 V, f = 1 MHz VR = 8 V, f = 470 MHz 1For details please refer to Application Note 047 2 Mar-27-2003 Series resistance Capacitance matching1) rS BB669/BB689... Diode capacitance CT = f = 1MHz 60 pF (VR ) Temperature coefficient of the diode 10 -3 50 45 1/C CT 40 35 30 25 20 15 10 5 0 0 4 8 12 16 20 24 V TC C 10 -4 30 10 -5 0 10 VR T A = Parameter 10 pA 3 10 2 IR 10 1 10 0 10 -1 10 0 Reverse current I R = (V R) 85C 25C 10 1 V 10 2 VR 3 capacitance TCc = (VR ) 10 1 V 10 2 VR Mar-27-2003 |
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