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| BC368 BC368 BC368 B CE TO-92 NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.5 A. Sourced from Process 37. Absolute Maximum Ratings* Symbol VCEO VCES VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Value 20 25 5.0 2.0 -55 to +150 Units V V V A C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max BC368 625 5.0 83.3 200 Units mW mW/C C/W C/W (c)1997 Fairchild Semiconductor Corporation BC368 NPN General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CES V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current I C = 10 mA, IB = 0 I C = 100 A, I E = 0 I E = 10 A, I C = 0 VCB = 25 V, IE = 0 VCB = 25 V, IE = 0, TA = 150C VEB = 5.0 V, IC = 0 20 25 5.0 10 1.0 10 V V V A mA A ON CHARACTERISTICS hFE DC Current Gain I C = 5.0 mA, VCE = 10 V I C = 0.5 A, VCE = 1.0 V I C = 1.0 A, VCE = 1.0 V I C = 1.0 A, IB = 100 mA I C = 1.0 A, VCE = 1.0 V 50 85 60 375 0.5 1.0 V V VCE(sat) VBE(on) Collector-Emitter Saturation Voltage Base-Emitter On Voltage SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product I C = 10 mA, VCE = 5.0 V, f = 35 MHz 45 MHz Typical Characteristics VCESAT- COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Pulsed Current Gain vs Collector Current 500 V CE = 5V 400 125 C Collector-Emitter Saturation Voltage vs Collector Current 1 = 10 25 C 0.1 125 C - 40 C 300 25 C 200 - 40 C 0.01 100 0 0.001 0.01 0.1 I C - COLLECTOR CURRENT (A) 1 0.01 I C 0.1 - COLLECTOR CURRENT (A) P3 1 BC368 NPN General Purpose Amplifier (continued) Typical Characteristics (continued) VBE(ON) BASE-EMITTER ON VOLTAGE (V) - VBESAT- BASE-EMITTER VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current 1.4 1.2 1 - 40 C Base-Emitter ON Voltage vs Collector Current 1 = 10 0.8 - 40 C 25 C 0.8 0.6 0.4 0.2 0.01 IC 25 C 125 C 0.6 125 C 0.4 V CE = 5V 1 10 100 I C - COLLECTOR CURRENT (mA) P3 0.1 - COLLECTOR CURRENT (A) P3 1 0.2 1000 C OBO - COLLECTOR-BASE CAPACITANCE (pF) Collector-Cutoff Current vs Ambient Temperature I CBO- COLLECTOR CURRENT (nA) 100 V 10 CB Collector-Base Capacitance vs Collector-Base Voltage 40 = 20V 30 1 20 0.1 10 25 50 75 100 125 T A - AMBIENT TEMPERATURE (C) 150 0 0 4 8 12 Pr 37 16 20 24 28 V CB- COLLECTOR-BASE VOLTAGE (V) h FE - GAIN BANDWIDTH PRODUCT (MHz) Gain Bandwidth Product vs Collector Current V CE = 10V 400 300 200 100 0 P D - POW ER DISSI PATION (mW) Power Dissip atio n vs Ambient Temperature 700 600 500 400 300 200 100 0 0 25 50 75 100 TEMPER A URE ( o C) T 125 150 TO- 92 500 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM DISCLAIMER ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. |
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