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| BC856W...BC860W PNP Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC846W, BC847W, BC848W BC849W, BC850W (NPN) 3 2 1 VSO05561 Type BC856AW BC856BW BC857AW BC857BW BC857CW BC858AW BC858BW BC858CW BC859AW BC859BW BC859CW BC860BW BC860CW Marking 3As 3Bs 3Es 3Fs 3Gs 3Js 3Ks 3Ls 4As 4Bs 4Cs 4Fs 4Gs 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C Package SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 1 Dec-11-2001 BC856W...BC860W Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage DC collector current Peak collector current Peak base current Peak emitter current Total power dissipation, TS = 124 C Junction temperature Storage temperature Symbol VCEO VCBO VCES VEBO IC ICM IBM IEM Ptot Tj Tstg BC856W BC857W BC858W Unit BC860W BC859W 65 80 80 5 45 50 50 5 100 200 200 200 250 150 -65 ... 150 mW C 30 30 30 5 mA mA V Thermal Resistance Junction - soldering point 1) RthJS 105 K/W Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BC856W BC857/860W BC858/859W Symbol min. V(BR)CEO Values typ. max. Unit V 65 45 30 - Collector-base breakdown voltage IC = 10 A, IE = 0 BC856W BC857/860W BC858/859W V(BR)CBO 80 50 30 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 Dec-11-2001 BC856W...BC860W Electrical Characteristics at TA = 25C, unless otherwise specified. Symbol Values Parameter min. DC Characteristics Collector-emitter breakdown voltage IC = 10 A, VBE = 0 BC856W BC857/860W BC858/859W Unit max. V typ. V(BR)CES 80 50 30 V(BR)EBO ICBO ICBO hFE hFE -group A hFE -group B hFE -group C hFE hFE -group A hFE -group B hFE -group C 125 220 420 VCEsat VBEsat VBE(ON) 600 650 750 820 700 850 75 250 300 650 180 290 520 250 475 800 140 250 480 5 15 5 Emitter-base breakdown voltage IE = 1 A, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 C DC current gain 1) IC = 10 A, VCE = 5 V nA A - DC current gain 1) IC = 2 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter saturation voltage 1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter voltage 1) IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V mV 1) Pulse test: t =300s, D = 2% 3 Dec-11-2001 BC856W...BC860W Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol Values min. AC characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz fT Ccb Ceb h11e hFE -gr.A hFE -gr.B hFE -gr.C h12e h21e h22e 18 30 60 10 200 330 600 1.5 2 3 2.7 4.5 8.7 250 3 10 5 15 typ. max. Unit MHz pF k F BC858W Noise figure IC = 200 A, VCE = 5 V, RS = 2 k, f = 1 kHz, f = 200 Hz Equivalent noise voltage IC = 200 A, VCE = 5 V, RS = 2 k, f = 10 ... 50 Hz F BC859W BC860W Vn BC860W - 1 1 - 4 4 0.11 4 Dec-11-2001 Open-circuit reverse voltage transf.ratio IC = 2 mA, VCE = 5 V, f = 1 kHz hFE -gr.A hFE -gr.B hFE -gr.C Short-circuit forward current transf.ratio IC = 2 mA, VCE = 5 V, f = 1 kHz hFE -gr.A hFE -gr.B hFE -gr.C Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz hFE -gr.A hFE -gr.B hFE -gr.C Noise figure IC = 200 A, VCE = 5 V, RS = 2 k, BC856W f = 1 kHz, f = 200 Hz BC857W 10-4 - S dB V BC856W...BC860W Total power dissipation Ptot = f (TS ) Collector-base capacitance CCB = f (VCBO) Emitter-base capacitance CEB = f (VEBO) BC 856...860 EHP00376 300 mW C CB0 ( C EB0 ) 12 pF 10 P tot 200 8 C EBO 150 6 100 4 C CBO 50 2 0 0 20 40 60 80 100 120 C 150 0 10 -1 5 10 0 V VCB0 TS 10 1 (VEB0 ) Permissible pulse load Ptotmax / PtotDC = f (tp ) 10 3 Ptot max 5 Ptot DC tp D= T tp T EHP00377 Transition frequency fT = f (IC) VCE = 5V 10 3 MHz EHP00378 fT 5 10 2 5 10 1 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 10 1 10 -1 5 10 0 5 10 1 mA C 10 2 5 Dec-11-2001 BC856W...BC860W Collector cutoff current ICBO = f (TA) VCB = 30V 10 4 nA EHP00381 Collector-emitter saturation voltage IC = f (VCEsat), h FE = 20 10 2 EHP00380 CB0 10 3 5 10 5 10 1 5 10 5 10 -1 0 2 C mA 100 C 25 C -50 C max 10 1 5 typ 10 5 0 0 50 100 C TA 150 10 -1 0 0.1 0.2 0.3 0.4 V 0.5 VCEsat DC current gain hFE = f (IC ) VCE = 5V 10 3 EHP00382 Base-emitter saturation voltage IC = f (VBEsat), hFE = 20 10 2 mA EHP00379 h FE 5 100 C 25 C C 100 C 25 C -50C 10 2 5 -50 C 10 1 5 10 1 5 10 0 5 10 0 10 -2 5 10 -1 5 10 0 5 10 1 mA 10 2 10 -1 0 0.2 0.4 0.6 0.8 C V 1.2 V BEsat 6 Dec-11-2001 BC856W...BC860W h parameter he = f (IC) normalized VCE = 5V 10 2 he 5 BC 856...860 EHP00383 h parameter he = f (VCE) normalized IC = 2mA BC 856...860 EHP00384 2.0 he 1.5 C = 2 mA h 11 10 1 5 h 11e VCE = 5 V h 12e 10 0 5 1.0 h12 0.5 h 22 h 21e h 22e 10 -1 0 10 -1 5 10 0 mA 10 1 0 10 20 V VCE 30 C Noise figure F = f (VCE ) IC = 0.2mA, RS = 2k, f = 1kHz 20 dB BC 856...860 EHP00385 Noise figure F = f (f) IC = 0.2mA, VCE = 5V, R S = 2k BC 856...860 EHP00386 20 dB F 15 F 15 10 10 5 5 0 10 -1 5 10 0 5 10 1 V VCE 10 2 0 10 -2 10 -1 10 0 10 1 kHz 10 2 f 7 Dec-11-2001 BC856W...BC860W Noise figure F = f (IC ) VCE = 5V, f = 120Hz BC 856...860 EHP00387 Noise figure F = f (IC) VCE = 5V, f = 1kHz 20 dB BC 856...860 EHP00388 20 dB F 15 R S = 1 M 100 k 10 k F 15 R S = 1 M 10 500 100 k 10 k 10 1 k 5 1 k 5 500 0 10 -3 10 -2 10 -1 10 0 mA 10 1 0 10 -3 10 -2 10 -1 10 0 mA 10 1 C C Noise figure F = f (IC ) VCE = 5V, f = 10kHz 20 dB BC 856...860 EHP00389 F 15 R S = 1 M 100 k 10 500 10 k 5 1 k 0 10-3 10 -2 10 -1 10 0 mA 10 1 C 8 Dec-11-2001 |
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