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| CMLM3405 MULTI DISCRETE MODULE TM SURFACE MOUNT HIGH CURRENT LOW VCE (SAT) SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE TM Central TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMLM3405 is a single NPN Transistor and Schottky Diode packaged in a space saving SOT-563 case and designed for small signal general purpose applications where size and operational efficiency are prime requirements. * Complementary Device: CMLM7405 * Combination High Current Low VCE (SAT) Transistor and Low VF Schottky Diode. SOT-563 CASE MARKING CODE: C53 SYMBOL PD TJ, Tstg JA SYMBOL VCBO VCEO VEBO IC ICM SYMBOL VRRM IF IFRM IFSM UNITS mW C C/W UNITS V V V A A UNITS V mA A A MAXIMUM RATINGS (SOT-563 Package): (TA=25C) Power Dissipation Operating and Storage Junction Temperature Thermal Resistance MAXIMUM RATINGS Q1: (TA=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Peak) MAXIMUM RATINGS D1: (TA=25C) Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current, tp 1ms Forward Surge Current, tp = 8ms 350 -65 to +150 357 40 25 6.0 1.0 1.5 40 500 3.5 10 ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=40V IEBO VEB=6.0V BVCBO IC=100A 40 BVCEO IC=10mA 25 BVEBO IE=100A 6.0 VCE(SAT) IC=50mA, IB=5.0mA VCE(SAT) IC=100mA, IB=10mA VCE(SAT) IC=200mA, IB=20mA VCE(SAT) IC=500mA, IB=50mA VCE(SAT) IC=800mA, IB=80mA VCE(SAT) IC=1.0A, IB=100mA VBE(SAT) IC=800mA, IB=80mA VBE(ON) VCE=1.0V, IC=10mA TYP MAX 100 100 20 35 75 130 200 250 50 75 150 250 400 450 1.1 0.9 UNITS nA nA V V V mV mV mV mV mV mV V V R0 (23-March 2005) CMLM3405 Central TM MULTI DISCRETE MODULE TM SURFACE MOUNT HIGH CURRENT LOW VCE (SAT) SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE Semiconductor Corp. ELECTRICAL CHARACTERISTICS Q1 (continued) SYMBOL TEST CONDITIONS hFE VCE=1.0V, IC=10mA hFE VCE=1.0V, IC=100mA hFE VCE=1.0V, IC=500mA hFE VCE=1.0V, IC=1.0A fT VCE=10V, IC=50mA, f=100MHz Cob VCB=10V, IE=0, f=1.0MHz ELECTRICAL CHARACTERISTICS D1 (TA=25C) IR VR= 10V IR VR= 30V BVR IR= 500A VF IF= 100A VF IF= 1.0mA VF IF= 10mA VF IF= 100mA VF IF= 500mA CT VR= 1.0V, f=1.0 MHz MIN 100 100 100 50 100 MAX 300 UNITS 10 MHz pF 20 100 40 0.13 0.21 0.27 0.35 0.47 50 A A V V V V V V pF SOT-563 - MECHANICAL OUTLINE D E A 6 5 4 E B G F 1 2 3 C H R0 MARKING CODE: C53 LEAD CODE: 1) EMITTER Q1 2) BASE Q1 3) CATHODE D1 4) ANODE D1 5) ANODE D1 6) COLLECTOR Q1 R0 (23-March 2005) |
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