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ASG304 DC-2000 MHz SiGe HBT Amplifier Features *SiGe Technology *18 dB Gain at 900 MHz *+24 dBm P1dB *+41 dBm Output IP3 *2.6 dB Noise Figure *MTTF > 100 Years *Single +6 V Supply *SOT-89 Surface Mount Package Description The ASG304 is designed for high linearity, high gain, and low noise over a wide range of frequency, being suitable for use in both receiver and transmitter of wireless and wireline telecommunication systems. The product is manufactured using a state-of-the-art SiGe HBT process of the company's own, making it cost-effective and highly reliable. The amplifiers are available in a low cost SOT-89 package completing stringent DC and RF tests. Package Style: SOT-89 Specifications 1) Parameters Frequency Range Gain Input VSWR Output IP3 3) 2) 2) Applications Units MHz dB dBm dB dBm mA V 4) Min. Typ. 250 - 2000 Max. *CDMA, GSM, W-CDMA, PCS *PA Driver Amplifier *Gain Block *CATV Amplifier *IF Amplifier 17.5 18 1.2 1.7 Output VSWR Noise Figure Output P1dB 39 41 2.6 24 110 6 32 45 Supply Current Supply Voltage Thermal Resistance, Rth More Information Tel: (82) 42-528-7220 Fax: (82) 42-528-7222 ASB, Inc., 4 FI. Venture Town Bldg., 367-17 Goijeong-Dong, Seo-Gu, Daejon 302-716, Korea th C/W 1) Measurement conditions are as follows: T = 25C, VCC = 6 V, Freq. = 900 MHz, 50 ohm system. 2) S11 & S22 can be improved, at a specific frequency, by moving an input shunt capacitor (C2) along an input transmission line. 3) OIP3 is measured with two tones at an output power of +8 dBm/tone separated by 1 MHz. 4) The thermal resistance was determined at a DC power of 0.834 W (VCC=6 V, IC=139 mA) with RF signal and a lead temperature of 85.2 C. Absolute Maximum Ratings Parameters Operating Case Temperature Storage Temperature Supply Voltage Operating Junction Temperature Input RF Power (continuous) 1) Rating -40 to + 85C -40 to + 150C 8V 150C +3 dB above Input P1dB 1) Remarks 1) Contact us for detailed information about a higher input power operation. Application Notes Application Circuit for 950 MHz (GSM) Application Circuit for 1750 MHz Application Circuit for 2250-2750 MHz Application Circuit for 900 MHz (5 V) Ordering Information Part Number ASG304 EB-ASG304-900 EB-ASG304-2000 EB-ASG304-1750 EB-ASG304-IF EB-ASG304-CATV Description High linearity medium power amplifier (Available in tape and reel) Fully assembled evaluation kit (900 MHz) Fully assembled evaluation kit (2000 MHz) Fully assembled evaluation kit (1750 MHz) Fully assembled evaluation kit (10-200 MHz) Fully assembled evaluation kit (50-860 MHz) 1/8 www.ASB.co.kr June 2003 ASG304 Outline Drawing (Unit: mm) 3 a 2 2 1 Pin Description Function Input Ground Output Pin No. 1 2 3 Land Pattern Mounting Configuration (Unit: mm) Note: 1. The number and size of ground via holes in a circuit board is critical for thermal and RF grounding considerations. 2. We recommend that the ground via holes be placed on the bottom of lead pin 2 for better RF and thermal performance, as shown in the drawing at the left side. 2/8 www.ASB.co.kr June 2003 ASG304 Application Circuit: 900 MHz Typical Performance Frequency Magnitude S21 Magnitude S11 Magnitude S22 Output P1dB Output IP3 2) 1) 1) Schematic 900 MHz 18 dB -24 dB -11 dB 24 dBm 41 dBm 2.6 dB 6V 110 mA RF IN C2=8 pF R1=7.5 k C1=10 pF L1=100 nH Vcc=6 V C4= C5= C6= 100 pF 1000 pF 0.1F 50 3 mm ASG304 C3=100 pF RF OUT Noise Figure Supply Voltage Current 1) S11 & S22 can be improved, at a specific frequency, by moving an input shunt capacitor (C2) along an input transmission line. 2) OIP3 is measured with two tones at an output power of +8 dBm/tone separated by 1 MHz. 2 Board Layout (FR4, 40x40 mm , 0.8T) Gain vs. Temperature 20 19 Gain (dB) 18 17 Frequency=900 MHz 16 -60 -1 5 -2 0 -2 5 S12 [dB] -3 0 85oC -3 5 25oC -40oC -40 -20 0 20 o 40 60 80 100 -4 0 6 00 7 00 80 0 90 0 100 0 11 00 1 200 Freq uenc y [MHz ] Temperature ( C) S-parameters 10 -15 0 -20 -10 S11 (dB) -25 -20 -30 85 C o 25 C o -40 C o S12 (dB) -30 -40 -35 85 C o 25 C o -40 C o -50 600 700 800 900 1000 1100 1200 -40 600 700 800 900 1000 1100 1200 Frequency (MHz) Frequency (MHz) 25 5 20 0 15 -5 S21 (dB) 10 S22 (dB) 5 85 C o 25 C o -40 C o -10 -15 85 C o 25 C o -40 C o 0 600 700 800 900 1000 1100 1200 -20 600 700 800 900 1000 1100 1200 Frequency (MHz) Frequency (MHz) 3/8 www.ASB.co.kr June 2003 ASG304 P1dB vs. Frequency 30 Output IP3 vs. Frequency (Pout per tone = 8 dBm) 60 28 85 C o 25 C o -40 C o 55 50 85 C o 25 C o -40 C o Output IP3 (dBm) P1dB (dBm) 26 45 40 35 30 25 24 22 20 800 825 850 875 900 925 950 20 800 825 850 875 900 925 950 Frequency (MHz) Frequency (MHz) Output IP3 vs. Tone Power (Frequency = 900 MHz) 60 55 50 880 MHz Adjacent Channel Power vs. Channel Output Power IS-95, 9 Channels Forward -20 -25 Adjacent Channel Power (dBc) 85 C o 25 C o -40 C o -30 -35 -40 -45 -50 -55 -60 -65 -70 -75 -80 -85 4 6 Output IP3 (dBm) 85 C o 25 C o -40 C o 45 40 35 30 25 20 8 9 10 11 12 13 14 15 16 8 10 12 14 16 18 20 Pout per tone (dBm) Channel Output Power (dBm) 4/8 www.ASB.co.kr June 2003 ASG304 Application Circuit: 2000 MHz Typical Performance Frequency Magnitude S21 Magnitude S11 Magnitude S22 Output P1dB Output IP3 2) 1) 1) Schematic 2000 MHz 10.5 dB -20 dB -15 dB 24 dBm 40 dBm 3.5 dB 6V 110 mA 5 mm RF IN L2=3.3 nH C1=10 pF ASG304 C2=2.7 pF GND R1=7.5 k L1=56 nH Vcc=6 V C4= 100 pF C5= 1000 pF C6= 0.1 F 50 8.75 mm C3=5 pF RF OUT Noise Figure Supply Voltage Current 1) S11 & S22 can be improved, at a specific frequency, by moving an input shunt capacitor (C2) and inductor (L2) along an input transmission line. 2) OIP3 is measured with two tones at an output power of +8 dBm/tone separated by 1 MHz. Gain vs. Temperature 14 Board Layout (FR4, 40x40 mm2, 0.8T) 13 Gain (dB) 12 11 Frequency=2 GHz 10 -60 -40 -20 0 20 o 40 60 80 100 Temperature ( C) S-parameters 20 -10 0 85 C o 25 C o -40 C o -15 85 C o 25 C o -40 C o S11 (dB) S12 (dB) -20 -20 -40 -25 -60 1800 1900 2000 2100 2200 -30 1800 1900 2000 2100 2200 Frequency (MHz) 20 Frequency (MHz) 10 15 85 C o 25 C o -40 C o 0 85 C o 25 C o -40 C o S21 (dB) S22 (dB) 10 -10 5 -20 0 1800 1900 2000 2100 2200 -30 1800 1900 2000 2100 2200 Frequency (MHz) Frequency (MHz) 5/8 www.ASB.co.kr June 2003 ASG304 P1dB vs. Frequency 30 Output IP3 vs. Frequency (Pout per tone = 8 dBm) 60 28 85 C o 25 C o -40 C o 55 50 85 C o 25 C o -40 C o Output IP3 (dBm) 1900 2000 2100 P1dB (dBm) 26 45 40 35 30 25 24 22 20 1800 20 1800 1900 2000 2100 Frequency (MHz) Frequency (MHz) Output IP3 vs. Tone Power (Frequency = 2 GHz) 60 55 50 1960 MHz Adjacent Channel Power vs. Channel Output Power IS-95, 9 Channels Forward -20 -25 o Adjacent Channel Power (dBc) 85 C o 25 C o -40 C o -30 -35 -40 -45 -50 -55 -60 -65 -70 -75 -80 -85 4 6 85 C o 25 C o -40 C Output IP3 (dBm) 45 40 35 30 25 20 8 10 12 14 16 8 10 12 14 16 18 20 Pout per tone (dBm) Channel Output Power (dBm) 6/8 www.ASB.co.kr June 2003 ASG304 Application Circuit: 50-860 MHz for CATV Typical Performance * Zo=50 , Vcc=6 V, Ic=120 mA Parameters Gain Output P1dB S11 S22 S12 Noise Figure OIP3 OIP2 Units dB dBm dB dB dB dB dBm dBm Frequency (MHz) 50 13.3 22 -8.1 -8.4 -43 5.2 36 49 250 13.4 23 -8.2 -9.5 -41 5.4 38 52 450 13.2 22.4 -9.1 -9.2 -37 5.9 37 53 650 13.6 22 -12 -8.8 -33 5.9 33 63 850 13.1 21.5 -15.8 -10.1 -30 5.6 35 70 Schematic C5= C6= C7= 100 pF 1000 pF 0.1 F R1=7.5 k R4=270 C4=1000 pF ASG304 C1=1000 pF C2=3.3 pF C3=1000 pF L1=39 nH L2=100 nH Board Layout (FR4, 40x40 mm2, 0.8T) Vcc=6 V R2=20 RF IN R3=20 RF OUT S-parameters 0 20 S11 and S22 (dB) -5 15 -10 S21 (dB) 800 1000 S11 10 -15 5 S22 -20 0 200 400 600 0 0 200 400 600 800 1000 Frequency (MHz) Frequency (MHz) 7/8 www.ASB.co.kr June 2003 ASG304 OIP vs. Frequency 80 70 10 Noise Figure vs. Frequency OIP2 8 OIP2 and OIP3 (dBm) Noise Figure (dB) 60 50 40 30 6 4 OIP3 20 10 2 0 200 400 600 800 1000 0 0 200 400 600 800 1000 Frequency (MHz) Frequency (MHz) Application Circuit: 10-200 MHz for IF Typical Performance Frequency (MHz) Magnitude S21 (dB) Magnitude S11 (dB) Magnitude S22 (dB) Output P1dB (dBm) Output IP3 1) Schematic 100 19.6 -13.5 -11.0 22.0 37 5.6 5 113 100 19.7 -13.5 -11.0 22.8 36 5.6 6 2) Vcc=5 V C4= 100 pF C5= 1000 pF C6= 0.1 F RBIAS=6.2 k L1=560 nH C2=100 pF R2=750 (dBm) Noise Figure (dB) Supply Voltage (V) Current (mA) R1=30 RF IN C1=68 nF ASG304 R3=20 RF OUT C3=68 nF 114 1) OIP3 is measured with two tones at an output power of +8 dBm/tone separated by 1 MHz. 2) For 6 V operation, RBias should be replaced with 7.5 kohm. S-parameters 40 Board Layout (FR4, 40x40 mm2, 0.8T) 30 Gain Gain (dB) 20 10 0 0 50 100 150 200 Frequency (MHz) 0 -5 S11 S22 S11 and S22 (dB) -10 -15 -20 0 50 100 150 200 Frequency (MHz) 8/8 www.ASB.co.kr June 2003 |
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