 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Bulletin I27131 rev. G 10/02 IRK.41, .56 SERIES THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Features High Voltage Industrial Standard Package Thick Al metal die and double stick bonding Thick copper baseplate UL E78996 approved 3500VRMS isolating voltage ADD-A-pakTM GEN V Power Modules Benefits Up to 1600V Full compatible TO-240AA High Surge capability Easy Mounting on heatsink Al203 DBC insulator Heatsink grounded 45 A 60 A Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu baseplate allow an easier mounting on the majority of heatsink with increased tolerance of surface roughness and improve thermal spread. The Generation V of AAP module is manufactured without hard mold, eliminating in this way any possible direct stress on the leads. The electrical terminals are secured against axial pull-out: they are fixed to the module housing via a click-stop feature already tested and proved as reliable on other IR modules. Electrical Description These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS and battery charger. Major Ratings and Characteristics Parameters IT(AV) or I F(AV) @ 85C IO(RMS) (*) ITSM @ 50Hz IFSM @ 60Hz I 2t @ 50Hz @ 60Hz I2t VRRM range TSTG TJ (*) As AC switch. IRK.41 45 100 850 890 3.61 3.30 36.1 IRK.56 60 135 1310 1370 8.50 7.82 85.0 Units A A A A KA 2s KA 2s KA 2s V o 400 to 1600 - 40 to 125 - 40 to125 C C o www.irf.com 1 IRK.41, .56 Series Bulletin I27131 rev. G 10/02 ELECTRICAL SPECIFICATIONS Voltage Ratings Type number Voltage Code 04 06 08 IRK.41/ .56 10 12 14 16 VRRM , maximum VRSM , maximum VDRM , max. repetitive repetitive non-repetitive peak off-state voltage, peak reverse voltage peak reverse voltage gate open circuit V V V 400 600 800 1000 1200 1400 1600 500 700 900 1100 1300 1500 1700 400 600 800 1000 1200 1400 1600 IRRM IDRM 125C mA 15 On-state Conduction Parameters IT(AV) IF(AV) Max. average on-state current (Thyristors) Maximum average forward current (Diodes) IO(RMS) Max. continuous RMS on-state current. As AC switch ITSM or IFSM Max. peak, one cycle non-repetitive on-state or forward current 100 850 890 715 750 940 985 I2t Max. I2t for fusing 3.61 3.30 2.56 2.33 4.42 4.03 I2t Max. I2t for fusing (1) voltage (2) rt VTM VFM di/dt Max. value of on-state slope resistance (2) Max. peak on-state or forward voltage Max. non-repetitive rate of rise of turned on current IH IL Max. holding current Max. latching current 200 400 36.1 0.88 0.91 5.90 5.74 1.81 135 A 1310 1370 1100 1150 1450 1520 8.56 7.82 6.05 5.53 10.05 9.60 85.6 0.85 0.88 3.53 3.41 1.54 KA2s V m KA2s or 45 45 60 60 180o conduction, half sine wave, TC = 85oC IRK.41 IRK.56 Units Conditions I(RMS) t=8.3ms reapplied I(RMS) Sinusoidal half wave, Initial TJ = TJ max. t=10ms No voltage t=10ms 100% VRRM t=8.3ms reapplied t=10ms TJ = 25oC, t=8.3ms no voltage reapplied t=10ms No voltage t=8.3ms reapplied t=10ms 100% VRRM t=8.3ms reapplied t=10ms TJ = 25oC, t=8.3ms no voltage reapplied t=0.1 to 10ms, no voltage reapplied Low level (3) High level (4) Low level (3) High level (4) ITM = x IT(AV) IFM = x IF(AV) TJ = TJ max TJ = TJ max TJ = 25C Initial TJ = TJ max. VT(TO) Max. value of threshold V 150 A/s TJ = 25oC, from 0.67 VDRM, ITM = x IT(AV), I = 500mA, g tr < 0.5 s, tp > 6 s TJ = 25oC, anode supply = 6V, mA resistive load, gate open circuit TJ = 25oC, anode supply = 6V,resistive load (3) 16.7% x x IAV < I < x IAV (1) I2t for time tx = I2t x tx (4) I > x IAV (2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2 2 www.irf.com IRK.41, .56 Series Bulletin I27131 rev. G 10/02 Triggering Parameters PGM Max. peak gate power IRK.41 10 2.5 2.5 10 4.0 2.5 1.7 270 150 80 0.25 6 IRK.56 10 2.5 2.5 Units W A Conditions PG(AV) Max. average gate power IGM Max. peak gate current gate voltage VGT Max. gate voltage required to trigger IGT Max. gate current required to trigger VGD IGD Max. gate voltage that will not trigger Max. gate current that will not trigger -VGM Max. peak negative V TJ = - 40C TJ = 25C TJ = 125C TJ = - 40C TJ = 25C TJ = 125C Anode supply = 6V resistive load Anode supply = 6V resistive load mA V mA TJ = 125oC, rated VDRM applied TJ = 125oC, rated VDRM applied Blocking Parameters IRRM IDRM Max. peak reverse and off-state leakage current at VRRM, VDRM 2500 (1 min) VINS RMS isolation voltage 3500 (1 sec) 500 V/s V shorted TJ = 125oC, linear to 0.67 VDRM, gate open circuit 50 Hz, circuit to base, all terminals 15 mA TJ = 125 oC, gate open circuit IRK.41 IRK.56 Units Conditions dv/dt Max. critical rate of rise of off-state voltage (5) (5) Available with dv/dt = 1000V/s, to complete code add S90 i.e. IRKT41/16AS90. Thermal and Mechanical Specifications Parameters TJ Tstg Junction operating temperature range Storage temp. range IRK.41 - 40 to 125 - 40 to 125 IRK.56 Units Conditions C RthJC Max. internal thermal resistance, junction to case RthCS Typical thermal resistance case to heatsink T Mounting torque 10% to heatsink busbar wt Approximate weight Case style 5 3 110 (4) TO-240AA gr (oz) JEDEC Nm 0.1 0.23 0.20 K/W Mounting surface flat, smooth and greased A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound Per module, DC operation R Conduction (per Junction) Devices IRK.41 IRK.56 (The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC) Sine half wave conduction 180o 0.11 0.09 120o 0.13 0.11 90o 0.17 0.13 60o 0.23 0.18 30o 0.34 0.27 180o 0.09 0.07 Rect. wave conduction 120o 0.14 0.11 90o 0.18 0.14 60o 0.23 0.19 30o 0.34 0.28 Units C/W www.irf.com 3 IRK.41, .56 Series Bulletin I27131 rev. G 10/02 Ordering Information Table Device Code IRK.57 types With no auxiliary cathode IRK 1 1 2 3 4 5 6 - T 2 56 3 / 16 4 A 5 S90 6 Module type Circuit configuration (See Circuit Configuration table below) Current code * * Voltage code (See Voltage Ratings table) A : Gen V dv/dt code: S90 = dv/dt 1000 V/s No letter = dv/dt 500 Vs e.g. : IRKT57/16A etc. * * Available with no auxiliary cathode. To specify change: 41 to 42 56 to 57 Outline Table Dimensions are in millimeters and [inches] IRKT (1) ~ IRKH (1) ~ IRKL (1) ~ IRKN (1) - + (2) + (2) + (2) (2) + (3) G1 K1 (4) (5) K2 G2 (7) (6) G1 K1 (4) (5) (3) (3) K2 G2 (7) (6) (3) + G1 K1 (4) (5) NOTE: To order the Optional Hardware see Bulletin I27900 4 www.irf.com IRK.41, .56 Series Bulletin I27131 rev. G 10/02 Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature (C) 130 IRK.41.. Series R thJC (DC) = 0.46 K/W 130 IRK.41.. Series R thJC (DC) = 0.46 K/W 120 120 110 Conduction Angle 110 30 60 90 90 120 Conduction Period 100 30 100 60 90 90 120 180 180 DC 0 20 40 60 80 80 0 10 20 30 40 50 80 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristics 70 60 50 40 30 Conduction Angle Fig. 2 - Current Ratings Characteristics 100 DC 180 120 90 60 30 Maximum Average On-state Power Loss (W) 180 120 90 60 30 Maximum Average On-state Power Loss (W) 80 RMS Limit 60 RMS Limit 40 Conduction Period 20 10 0 IRK.41.. Series Per Junction T J = 125C 0 10 20 30 40 50 20 IRK.41.. Series Per Junction T J = 125C 0 20 40 60 80 0 Average On-state Current (A) Average On-state Current (A) Fig. 3 - On-state Power Loss Characteristics 800 Fig. 4 - On-state Power Loss Characteristics 900 800 700 600 500 400 Peak Half Sine Wave On-state Current (A) 700 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s Peak Half Sine Wave On-state Current (A) 600 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J 125C = No Voltage Reapplied Rated V RRM Reapplied 500 400 IRK.41.. Series Per Junction 300 1 10 100 IRK.41.. Series Per Junction 0.1 Pulse Train Duration (s) 1 300 0.01 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current www.irf.com 5 IRK.41, .56 Series Bulletin I27131 rev. G 10/02 140 120 100 80 180 120 90 60 30 K/ W 0.3 0. 5 Maximum Total On-state Power Loss (W) R thSA 0. 7 K/ W K/W 1.5 60 40 20 Conduction Angle 2K /W 3 K/ 1 W K/ K/ W = 0 .1 Delta K/W R W IRK.41.. Series Per Module T J = 125C 0 20 40 60 80 5 K/W 0 0 100 20 40 60 80 100 120 140 Total RMS Output Current (A) Maximum Allowable Ambient Temperature (C) Fig. 7 - On-state Power Loss Characteristics 350 R t hS Maximum Total Power Loss (W) 300 250 200 150 100 50 0 2 x IRK.41.. Series Single Phase Bridge Connected T J = 125C 0 20 40 60 80 0. 3 180 (Sine) 180 (Rect) K/ W 2 0. W K/ K/ W 0. 5 0. 7 K/ W 1K /W K /W 1.5 A .1 =0 K/ W el t -D aR 0 100 20 40 60 80 100 120 140 Total Output Current (A) Maximum Allowable Ambient Temperature (C) Fig. 8 - On-state Power Loss Characteristics 500 450 Maximum Total Power Loss (W) 400 350 300 250 200 150 100 50 0 0 20 40 60 3 x IRK.41.. Series Three Phase Bridge Connected T J = 125C 80 100 120 120 (Rect) 0. 3 SA R th = W K/ 0.1 0. 5 0.7 1 K/ 2 0. K/ K/ W K/ W W K/ W W -D ta el R 0 140 20 40 60 80 100 120 140 Total Output Current (A) Maximum Allowable Ambient Temperature (C) Fig. 9 - On-state Power Loss Characteristics 6 www.irf.com IRK.41, .56 Series Bulletin I27131 rev. G 10/02 Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature (C) 130 120 110 100 90 80 70 IRK.56.. Series R (DC) = 0.40 K/W thJC 130 120 110 IRK.56.. Series R thJC (DC) = 0.40 K/W Conduction Angle Conduction Period 100 90 80 30 70 0 20 90 60 40 120 180 DC 80 100 30 60 90 120 180 60 70 0 10 20 30 40 50 60 Average On-state Current (A) Average On-state Current (A) Fig. 10 - Current Ratings Characteristics Maximum Average On-state Power Loss (W) Maximum Average On-state Power Loss (W) 90 80 70 60 50 40 30 20 10 0 0 10 20 30 Conduction Angle Fig. 11 - Current Ratings Characteristics 120 100 80 60 40 20 0 180 120 90 60 30 RMS Limit DC 180 120 90 60 30 RMS Limit Conduction Period IRK.56.. Series Per Junction T J = 125C 40 50 60 IRK.56.. Series Per Junction T J = 125C 0 20 40 60 80 100 Average On-state Current (A) Average On-state Current (A) Fig. 12 - On-state Power Loss Characteristics 1200 1100 1000 900 800 700 600 500 IRK.56.. Series Per Junction 1 10 100 Fig. 13 - On-state Power Loss Characteristics 1400 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 1200 1000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J = 125C No Voltage Reapplied Rated V RRM Reapplied 800 600 IRK.56.. Series Per Junction 400 0.01 0.1 Pulse Train Duration (s) 1 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 14 - Maximum Non-Repetitive Surge Current Fig. 15 - Maximum Non-Repetitive Surge Current www.irf.com 7 IRK.41, .56 Series Bulletin I27131 rev. G 10/02 200 Maximum Total On-state Power Loss (W) 180 160 140 120 180 120 90 60 30 S R th 3 0. W K/ 2 0. W K/ 0. 7 100 80 60 Conduction Angle 1K /W 1.5 K/ W 2 K/ W 0. 4 K/ W A W K/ K/W 5 0. =0 W K/ .1 e lt -D aR 40 20 0 IRK.56.. Series Per Module T J = 125C 4 K/W 0 20 40 60 80 100 120 140 0 20 40 60 80 100 120 140 Total RMS Output Current (A) Maximum Allowable Ambient Temperature (C) Fig. 16 - On-state Power Loss Characteristics 450 Maximum Total Power Loss (W) 400 350 300 250 200 150 100 50 0 0 20 40 60 2 x IRK.56.. Series Single Phase Bridge Connected T J = 125C 80 100 120 180 (Sine) 180 (Rect) 0. 2 K/ W /W R th SA = 1 0. W K/ 0. 3K 0. 5 -D a elt R 0.7 K /W 1 K/ W K/ W 2 K/W 0 140 20 40 60 80 100 120 140 Total Output Current (A) Maximum Allowable Ambient Temperature (C) Fig. 17 - On-state Power Loss Characteristics 600 SA R th Maximum Total Power Loss (W) 500 400 300 200 100 0 120 (Rect) 0. 2 K/ W = 1 0. W K/ -D ta el 0.3 K/ R W 3 x IRK.56.. Series Three Phase Bridge Connected T J = 125C 0 20 40 60 0.5 K/ W 0.7 K/W 1 K/ W 80 100 120 140 160 180 0 20 40 60 80 100 120 140 Total Output Current (A) Maximum Allowable Ambient Temperature (C) Fig. 18 - On-state Power Loss Characteristics 8 www.irf.com IRK.41, .56 Series Bulletin I27131 rev. G 10/02 1000 Instantaneous On-state Current (A) Instantaneous On-state Current (A) 1000 100 100 T J= 25C 10 T J= 125C IRK.41.. Series Per Junction 1 0 1 2 3 4 5 6 7 TJ = 25C 10 TJ = 125C IRK.56.. Series Per Junction 1 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Instantaneous On-state Voltage (V) Instantaneous On-state Voltage (V) Fig. 19 - On-state Voltage Drop Characteristics Maximum Reverse Recovery Charge - Qrr (C) Maximum Reverse Recovery Current - Irr (A) 500 450 400 350 300 250 200 150 100 10 20 30 40 50 60 70 80 90 100 20 A 10 A Fig. 20 - On-state Voltage Drop Characteristics 110 100 90 80 70 60 50 40 30 10 20 30 40 50 60 IRK.41.. Series IRK.56.. Series T J = 125 C 70 80 90 100 IRK.41.. Series IRK.56.. Series T J = 125 C I TM = 200 A 100 A I TM = 200 A 100 A 50 A 20 A 10 A 50 A Rate Of Fall Of On-state Current - di/dt (A/s) Rate Of Fall Of Forward Current - di/dt (A/s) Fig. 21 - Recovery Charge Characteristics 1 Steady State Value: R thJC = 0.46 K/W R thJC = 0.40 K/W (DC Operation) 0.1 IRK.41.. Series IRK.56.. Series Fig. 22 - Recovery Current Characteristics Transient Thermal Impedance Z thJC (K/W) Per Junction 0.01 0.001 0.01 0.1 Square Wave Pulse Duration (s) 1 10 Fig. 23 - Thermal Impedance ZthJC Characteristics www.irf.com 9 IRK.41, .56 Series Bulletin I27131 rev. G 10/02 100 Instantaneous Gate Voltage (V) Rectangular gate pulse a)Recommended load line for rated di/dt: 20 V, 30 ohms tr = 0.5 s, tp >= 6 s b)Recommended load line for <= 30% rated di/dt: 20 V, 65 ohms 10 tr = 1 s, tp >= 6 s (1) PGM = 100 W, tp = 500 s (2) PGM = 50 W, tp = 1 ms (3) PGM = 20 W, tp = 25 ms (4) PGM = 10 W, tp = 5 ms (a) TJ = -40 C (b) TJ = 25 C TJ = 125 C 1 VGD IGD 0.1 0.001 0.01 (4) (3) (2) (1) IRK.41../.56.. Series 0.1 1 Frequency Limited by PG(AV) 10 100 1000 Instantaneous Gate Current (A) Fig. 24 - Gate Characteristics Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 10/02 10 www.irf.com |
Price & Availability of IRKT5612A
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |