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| MSC8001 HIGH POWER GaAs FET FEATURES INCLUDE: * 27.5 dBm Output Power with 7db Associated Gain at 8 GHz Power Optimized Design Provides High Power-added Efficiency Large Cross Section Ti/Pt/Au Gates Enhance Durability and Reliability Chip Devices are Selected from Standard Military Grade Wafers Hermetic Metal/Ceramic Package Suitable for Hi-Rel Applications Custom Electrical Test and Screening Available for Source Control Drawings * * FET PACKAGE TYPE 30 * * * TRANS1.SYM RF ELECTRICAL SPECIFICATIONS SYMBOL MAG PMAG FREQUENCY MAX AVAILABLE GAIN TA = 25 C O TEST CONDITIONS = 8.0 GHz MINIMUM TYPICAL MAXIMUM 8.5 24 UNITS dB dBm OUTPUT POWER AT MAG TUNING FREQUENCY = 8.0 GHz A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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