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| SHINDENGEN General Purpose Rectifiers Dual S1ZA20 200V 1.1A FEATURES *oe Small SMT package *oe Array *oe High reliability with superior moisture resistance *oe Applicable to Automatic Insertion APPLICATION *oe Conventional Rectification *oe Motor *oe Home Appliances, Office Equipment *oe Telecommunication, Factory Automation OUTLINE DIMENSIONS Case : 1Z i Unit : mm RATINGS *oeAbsolute Maximum Ratings (If not specified Tl=25*Z) Item Symbol Conditions Ratings nit U Storage Temperature Tstg -40*150 *Z Operating JunctionTj Temperature 150 *Z Maximum ReverseV Voltage 200 V RM 1.1 50Hz sine wave, R-load Ta=25*Z On alumina substrate I 50Hz sine wave, 0.8 A Average Rectified Forward Current R-load Ta=25*Z On alumina substrate O 50Hz sine wave, R-load Ta=25*Z On glass-epoxy substr 0.9 0.63 50Hz sine wave, R-load Ta=25*Z On glass-epoxy substr I 50Hz sine wave, Non-repetitive 1cycle peak value,A 30 Peak Surge Forward Current Tj=25*Z FSM *oeElectrical Characteristics (If not specified Tl=25*Z) Item Symbol Conditions Ratings nit U Max.1.1 Forward Voltage V I=0.9A, Pulse measurement, Rating of per diode V FF , Max.10 Reverse Current IR V=VM R R Pulse measurement, Rating of per diode EA junction to ambient On alumina substrate Max.931 element junction to ambient On alumina substrate Max.140 element *Z/W Thermal Resistance AEja 2 Max.120 junction to ambient On glass-epoxy substrate 1 element junction to ambient On glass-epoxy substrate 2 element Max.186 Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd S1ZAx 10 Forward Voltage 1 Forward Current IF [A] Tl=150C [TYP] Tl=25C [TYP] 0.1 Pulse measurement per diode 0.01 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 Forward Voltage VF [V] S1ZAx 1.6 Forward Power Dissipation Forward Power Dissipation PF [W] 1.2 0.8 0.4 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 Average Rectified Forward Current IO [A] Tj= 150C Sine wave S1ZAx 1.4 Derating Curve PCB Average Rectified Forward Current IO [A] 1.2 (Alumina substrate) 1-circuit current 2-circuit current 1 0.8 (Glass-epoxy substrate) 1-circuit current 2-circuit current 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [C] Alumina substrate Soldering land 1mm Conductor layer 20m Substrate thickness 0.64mm Glass-epoxy substrate Soldering land 1mm Conductor layer 35m Sine wave R-load Free in air S1ZAx Peak Surge Forward Capability IFSM 40 10ms 10ms 1 cycle Peak Surge Forward Current IFSM [A] non-repetitive, sine wave, Tj=25C before surge current is applied 30 20 10 0 1 2 5 10 20 50 100 Number of Cycles [cycles] |
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