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Si9987 Vishay Siliconix Buffered H-Bridge FEATURES D D D D D D 1.0-A H-Bridge 500-kHz Switching Rate Shoot-Through Limited TTL Compatible Inputs 3.8- to 13.2-V Operating Range Surface Mount Packaging APPLICATIONS D D D D D D D VCM Driver Brushed Motor Driver Stepper Motor Driver Power Converter Optical Disk Drives Power Supplies High Performance Servo DESCRIPTION The Si9987 is an integrated, buffered H-bridge with TTL compatible inputs and the capability of delivering a continuous 1.0 A @ VDD = 5.0 V (room temperature) at switching rates up to 500 kHz. Internal logic prevents the upper and lower outputs of either half-bridge from being turned on simultaneously. Unique input codes allow both outputs to be forced low (for braking) or forced to a high impedance level. The Si9987 is available in an 8-Pin SOIC package, specified to operate over a voltage range of 3.8 V to 13.2 V, and the commercial temperature range of 0 to 70_C (C suffix) and -40 to 85_C (D suffix). FUNCTIONAL BLOCK DIAGRAM, PIN CONFIGURATION AND TRUTH TABLE SO-8 SA GND VDD SB 1 2 3 4 Top View Shoot-Through Protection Logic 8 OUTA INA INB OUTB INA (7) (3) VDD Si9987 7 6 5 TRUTH TABLE INA 1 0 0 1 (6) INB INB 0 1 0 1 OUTA 1 0 0 HiZ OUTB 0 1 0 HiZ GND (2) (1) SA (8) (5) OUTPUT A B (4) SB ORDERING INFORMATION Part Number Si9987CY-T1 SI9987DY-T1 Si9987CY Si9987DY Document Number: 70864 S-02936--Rev. C, 22-Jan-01 Temperature Range 0 to 70_C -40 to 85_C 0 to 70_C -40 to 85_C Package Tape and Reel Bulk (tubes) www.vishay.com 1 Si9987 Vishay Siliconix ABSOLUTE MAXIMUM RATINGSa Voltage on any pin with respect to ground . . . . . . . . . . . -0.3 V to VDD +0.3 V Voltage on pins 5, 8 with respect to GND . . . . . . . . . . . . . . -1 V to VDD +1 V Voltage on pins 1, 4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 V to GND +1 V Maximum VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 V Peak Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 A Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150_C Maximum Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . 150_C Power Dissipationb . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 W qJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100_C/W Continuous IOUT Current (TJ = 135_C)c TA = 25_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "1.02 A TA = 70_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "0.75 A TA = 85_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "0.65 A Operating Temperature Range Si9987CY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to 70_C Si9987DY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to 85_C Notes a. Device mounted with all leads soldered or welded to PC board. b. Derate 10 mW/_C above 25_C. c. TJ = TA + (PD x qJA), PD = Power Dissipation . RECOMMENDED OPERATING RANGE VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.8 V to 13.2 V Maximum Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . 135_C SPECIFICATIONS Test Conditions Unless Specified Parameter Input Input Voltage High Input Voltage Low Input Current with Input Voltage High Input Current with Input Voltage Low VINH VINL IINH IINL VIN = 2 V VIN = 0 V -1 2 1 1 V mA m Limits Mina Typb Maxa Unit Symbol VDD = 3.8 to 13.2 V SA @ GND, SB @ GND Output IOUT = -1 A Output Voltage Highc VOUTH IOUT = -500 mA VDD = 10.8 V VDD = 4.5 V VDD = 10.8 V VDD = 4.5 V VDD = 10.8 V VDD = 4.5 V VDD = 10.8 V VDD = 4.5 V 10.40 4.00 10.60 4.25 3.63 10.56 4.20 10.68 4.35 3.70 0.24 0.30 0.12 0.15 0.10 0 -10 0 VDD +0.7 -0.9 -0.7 VDD +0.9 0.40 0.50 0.20 0.25 0.17 10 mA m V V IOUT = -300 mA, VDD = 3.8 V IOUT = 1 A Output Voltage Lowc VOUTL IOUT = 500 mA IOUT = 300 mA, VDD = 3.8 V Output Leakage Current Low Output Leakage Current High Output V Clamp High Output V Clamp Low IOLL IOLH VCLH VCLL INA = INB w 2 V, VOUT = VDD = 13.2 V VOUT = 0, VDD = 13.2 V INA = INB w 2 V IOUT = 100 mA IOUT = -100 mA Supply VDD Supply Current IDD IN = 100 kHz, VDD = 5.5 V INA = INB = 4.5 V, VDD = 5.5 V 1.8 75 2.5 125 mA mA Dynamic Propogation Delay Time TPLH TPHL VDD = 5 V 300 100 nS Notes a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. Maximum value measured at TJ = 135_C. Typical value measured at TJ = TA = 25_C (pulse width v 300 msec, duty cycle v 2%). www.vishay.com Document Number: 70864 S-02936--Rev. C, 22-Jan-01 2 Si9987 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output High Voltage vs. Output Current 12 VDD = 10.8 V 400 9 VOUTL (mV) VOUTH (V) 300 VDD = 3.8 V 10.8 V 200 500 Output Low Voltage vs. Output Current 4.5 V 6 4.5 V 3 3.8 V 100 0 0.50 0.75 1.00 Output Current (A) 1.25 1.50 0 0.50 0.75 1.00 Output Current (A) 1.25 1.50 Supply Current vs. Supply Voltage 200 6 Supply Current vs. Supply Voltage f = 100 kHz 5 160 I DD - Standby ( m A) 4 120 I DD (mA) 3 2 80 1 40 4 6 8 10 12 14 0 4 6 8 10 12 14 VDD - Supply Voltage (V) VDD - Supply Voltage (V) Supply Current vs. Temperature 200 180 160 140 120 100 5.5 V 80 60 -35 0 -35 I DD (mA) VDD = 13.2 V 6 8 Supply Current vs. Temperature f = 100 kHz VDD = 13.2 V I DD - Standby ( m A) 4 5.5 V 2 -20 -5 10 25 40 55 70 85 -20 -5 10 25 40 55 70 85 Temperature (_C) Temperature (_C) Document Number: 70864 S-02936--Rev. C, 22-Jan-01 www.vishay.com 3 Si9987 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Propagation Time vs. Supply Voltage 600 15 Supply Current vs. Frequency 500 12 VDD = 13.2 V I DD (mA) 9 Delay Time (ns) 400 300 TPLH 6 200 TPHL 100 3 5.5 V 3.8 V 0 3 6 9 VDD - Supply Voltage (V) 12 15 0 0 50 100 f - Frequency (kHz) 150 200 Supply Current vs. Supply Voltage 35 f = 500 kHz 28 0.50 0.46 0.42 0.38 I DD (mA) 21 R OUT ( W ) 0.34 0.30 0.26 0.22 7 0.18 0.14 0 4 6 8 10 12 14 0.10 2 4 6 ROUT vs. VDD TA = 135_C 85_C 14 25_C -40_C 8 VDD 10 12 14 VDD - Supply Voltage (v) ROUT vs. Junction Temperature (TJ) 0.5 1.5 1.4 VDD = 3.8 V 4.5 V 10.8 V R OUT ( W ) 5.5 V 0.3 13.2 V R OUT Normalized ( W ) 0.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.1 -50 ROUT Normalized vs. Junction Temperature (TJ) VDD = 10.8 V VDD = 4.5 V 0.2 0 50 Temperature (_C) 100 150 0.6 -50 -25 0 25 50 75 100 125 150 Temperature (_C) www.vishay.com 4 Document Number: 70864 S-02936--Rev. C, 22-Jan-01 |
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