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APM2312
N-Channel Enhancement Mode MOSFET
Features
*
16V/5A , RDS(ON)=35m(typ.) @ VGS=4.5V
Pin Description
D
3
RDS(ON)=45m(typ.) @ VGS=2.5V RDS(ON)=60m(typ.) @ VGS=1.8V
* * *
Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged
G S
1 2
SOT-23 Package
Top View of SOT-23
D
Applications
*
Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems.
G
Ordering and Marking Information
APM2312
Handling Code Temp. Range Package Code
S
N-Channel MOSFET
Package Code A : SOT-23 Operation Junction Temp. Range C : -55 to 150C Handling Code TR : Tape & Reel
APM2312 A :
M12X
X - Date Code
Absolute Maximum Ratings
Symbol VDSS VGSS ID* IDM Drain-Source Voltage Gate-Source Voltage Parameter
(TA = 25C unless otherwise noted)
Rating 16 8 5 15 A V Unit
Maximum Drain Current - Continuous Maximum Drain Current - Pulsed
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.2 - July., 2003 1 www.anpec.com.tw
* Surface Mounted on FR4 Board, t 10 sec.
APM2312
Absolute Maximum Ratings (Cont.)
Symbol PD Parameter Maximum Power Dissipation TA=25C TA=100C TJ TSTG RjA Maximum Junction Temperature Storage Temperature Range Thermal Resistance - Junction to Ambient
(TA = 25C unless otherwise noted)
Rating 1.25 W 0.5 150 -55 to 150 100 C C C/W Unit
Electrical Characteristics
Symbol Static BV DSS IDSS V GS(th) IGSS R DS(ON)a V SDa
b
(TA = 25C unless otherwise noted)
APM2312 Min. Typ. Max.
Parameter
Test Condition
Unit
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage
V GS =0V , IDS=250A V DS =16V , VGS =0V V DS =V GS , IDS=250A V GS =8V , VDS=0V V GS =4.5V , IDS =5A V GS =2.5V , IDS =4.5A V GS =1.8V , IDS =4A ISD=1.7A , VGS =0V V DS =10V , IDS = 1A V GS =4.5V ,
16 1 0.5 0.7 35 45 60 0.7 10 1.9 1.8 17 33 70 80 45 1 100 45 55 70 1.3 12
V A V nA
m V
Dynamic Qg Total Gate Charge Q gs Q gd td(ON) Tr td(OFF) Tf C iss C oss C rss Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance
nC
V DD=10V , IDS =1A , V GEN =4.5V , R G =0.2 V GS =0V
40 45 25 580 170 100
ns
V DS =15V Reverse Transfer Capacitance Frequency=1.0MHz
pF
Notes
a b
: Pulse test ; pulse width 300s, duty cycle 2% : Guaranteed by design, not subject to production testing
Copyright ANPEC Electronics Corp. Rev. A.2 - July., 2003
2
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APM2312
Typical Characteristics
Output Characteristics
12 10
VGS=2,3,4,5,6,7,8,9,10V
Transfer Characteristics
12 10
ID-Drain Current (A)
8 6 4 2
VGS=1V
ID-Drain Current (A)
8 6 4 2 0 0.0
TJ=125C TJ=25C TJ=-55C
VGS=1.5V
0
0
1
2
3
4
5
0.5
1.0
1.5
2.0
2.5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.75
IDS=250uA
On-Resistance vs. Drain Current
0.08
VGS(th)-Threshold Voltage (V) (Normalized)
RDS(ON)-On-Resistance ()
1.50 1.25 1.00 0.75 0.50 0.25 0.00 -50
0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.00 0 3 6 9 12
VGS=2.5V VGS=4.5V
-25
0
25
50
75
100 125 150
Tj - Junction Temperature (C)
ID - Drain Current (A)
Copyright ANPEC Electronics Corp. Rev. A.2 - July., 2003
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APM2312
Typical Characteristics (Cont.)
On-Resistance vs. Gate-to-Source Voltage
0.10
ID=5A
On-Resistance vs. Junction Temperature
2.25
VGS=4.5V ID=5A
RDS(ON)-On-Resistance ()
0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 1 2 3 4 5 6 7 8
RDS(ON)-On-Resistance () (Normalized)
0.09
2.00 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0.00 -50
-25
0
25
50
75
100 125 150
VGS - Gate-to-Source Voltage (V)
TJ - Junction Temperature (C)
Gate Charge
5 1000
VDS=10V ID=1A
Capacitance
Frequency=1MHz
VGS-Gate-Source Voltage (V)
4
800
Capacitance (pF)
3
600
Ciss
2
400
Coss Crss
1
200
0
0
2
4
6
8
10
12
0
0
4
8
12
16
20
QG - Gate Charge (nC)
VDS - Drain-to-Source Voltage (V)
Copyright ANPEC Electronics Corp. Rev. A.2 - July., 2003
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APM2312
Typical Characteristics (Cont.)
Source-Drain Diode Forward Voltage
20 12 10 10 8 6 4 2 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0.01
Single Pulse Power
IS-Source Current (A)
TJ=150C
TJ=25C
Power (W)
0.1
1
10
100
600
VSD -Source-to-Drain Voltage (V)
Time (sec)
Normalized Thermal Transient Impedence, Junction to Ambient
Normalized Effective Transient Thermal Impedance
1
Duty Cycle=0.5
D=0.2 D=0.1
0.1
D=0.05 D=0.02 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=100C/W 3.TJM-TA=PDMZthJA SINGLE PULSE
0.01 1E-4
1E-3
0.01
0.1
1
10
100
600
Square Wave Pulse Duration (sec)
Copyright ANPEC Electronics Corp. Rev. A.2 - July., 2003
5
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APM2312
Packaging Information
SOT-23
D B
3 E 1 2 H
S e
A
A1
L
C
Dim A A1 B C D E e H L
M illim et er s M in. 1. 0 0 0. 0 0 0. 3 5 0. 1 0 2. 7 0 1. 4 0 1. 9 0 B SC 2. 4 0 0. 3 7 3. 0 0 0. 0 94 0. 0 01 5 M ax. 1. 3 0 0. 1 0 0. 5 1 0. 2 5 3. 1 0 1. 8 0 M in. 0. 0 39 0. 0 00 0. 0 14 0. 0 04 0. 1 06 0. 0 55
Inc he s M ax. 0. 0 51 0. 0 04 0. 0 20 0. 0 10 0. 1 22 0. 0 71 0. 0 75 B SC 0. 118
Copyright ANPEC Electronics Corp. Rev. A.2 - July., 2003
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APM2312
Physical Specifications
Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
temperature
Peak temperature
183C Pre-heat temperature
Time
Classification Reflow Profiles
Convection or IR/ Convection Average ramp-up rate(183C to Peak) 3C/second max. 120 seconds max Preheat temperature 125 25C) 60 - 150 seconds Temperature maintained above 183C Time within 5C of actual peak temperature 10 -20 seconds Peak temperature range 220 +5/-0C or 235 +5/-0C Ramp-down rate 6 C /second max. 6 minutes max. Time 25C to peak temperature VPR 10 C /second max.
60 seconds 215-219C or 235 +5/-0C 10 C /second max.
Package Reflow Conditions
pkg. thickness 2.5mm and all bgas Convection 220 +5/-0 C VPR 215-219 C IR/Convection 220 +5/-0 C pkg. thickness < 2.5mm and pkg. volume 350 mm pkg. thickness < 2.5mm and pkg. volume < 350mm Convection 235 +5/-0 C VPR 235 +5/-0 C IR/Convection 235 +5/-0 C
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Copyright ANPEC Electronics Corp. Rev. A.2 - July., 2003
7
APM2312
Reliability test program
Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245C,5 SEC 1000 Hrs Bias @ 125C 168 Hrs, 100% RH, 121C -65C ~ 150C, 200 Cycles
Carrier Tape & Reel Dimensions
E Po P P1 D
t
F W
Bo
Ao
D1 T2
Ko
J C A B
T1
Application
A 1781
B 60 1.0 D 1.5 +0.1
C 12.0 D1 F0.1MIN
J
T1
T2 1.4 Ao 3.1
2.5 0.15 9.0 0.5 Po 4.0 P1 2.0 0.05
W 8.0+ 0.3 - 0.3 Bo 3.0
P 4.0 Ko 1.3
E 1.75 t 0.20.03 (mm)
SOT-23
F 3.5 0.05
Copyright ANPEC Electronics Corp. Rev. A.2 - July., 2003
8
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APM2312
Cover Tape Dimensions
Application SOT- 23 Carrier Width 8 Cover Tape Width 5.3 Devices Per Reel 3000
Customer Service
Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369
Copyright ANPEC Electronics Corp. Rev. A.2 - July., 2003
9
www.anpec.com.tw

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