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NEC's 3W, L&S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET
FEATURES
* LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel * USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000, PCS * HIGH OUTPUT POWER: 35 dBm TYP with 5.0 V Vdc 32.5 dBm TYP with 3.5 V Vdc * HIGH LINEAR GAIN: 10 dB TYP at 1.9 GHz
0.9 - 0.2
4.2 MAX
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 79A
1.5 - 0.2
Source Source
5.7 MAX 0.6 - 0.15
X
I
Gate
Drain
0.8 - 0.15 4.4 MAX
Gate
1.0 MAX
Drain
1.2 MAX
0.8 MAX 3.6 - 0.2
T
5.7 MAX
9
0.4 - 0.15
* LOW THERMAL RESISTANCE: 5C/W
0.2 - 0.1
BOTTOM VIEW
DESCRIPTION
NEC's NE6510179A is a GaAs HJ-FET designed for medium power mobile communications, Fixed Wireless Access, ISM, WLL, PCS, IMT-2000, and MMDS transmitter and subscriber applications. It is capable of delivering 1.8 watts of output power(C/W) at 3.5 V and 3 Watts of ouptut power (CW) at 5 V with high linear gain, high efficiency, and excellent linearity. Reliability and performance uniformity are assured by NEC's stringent quality and control procedures.
Note: Unless otherwise specified, tolerance is 0.2 mm
ELECTRICAL CHARACTERISTICS (TC
PART NUMBER PACKAGE OUTLINE SYMBOLS POUT GL CHARACTERISTICS Output Power Linear Gain1 Power Added Efficiency Drain Current Saturated Drain Current Pinch-Off Voltage Thermal Resistance Gate to Drain Breakdown Voltage
= 25C) NE6510179A 79A UNITS dBm dB % A A V C/W V 12 -2.0 5 50 MIN 31.5 TYP 32.5 10.0 58 0.72 2.4 -0.4 8 VDS = 2.5 V; VGS = 0 V VDS = 2.5 V; ID = 14 mA Channel to Case IGD = 14 mA MAX TEST CONDITIONS f = 1900 MHz, VDS = 3.5 V, Pin = +25 dBm, Rg = 100 IDSQ = 200 mA (RF OFF)2
Functional Characteristics
ADD
ID IDSS
Electrical DC Characteristics
VP RTH BVGD
Notes: 1. Pin = 0 dBm 2. DC performance is tested 100% . Several samples per wafer are tested for RF performance. Wafer rejection criteria for standard devices is 1 reject for several samples.
California Eastern Laboratories
NE6510179A TYPICAL RF PERFORMANCE FOR REFERENCE (NOT SPECIFIED) (TC
SYMBOLS POUT GL CHARACTERISTICS Output Power Linear Gain1 Power Added Efficiency Drain Current Output Power Linear Gain1 Power Added Efficiency Drain Current UNITS dBm dB % A dBm dB % A MIN TYP 35.0 10.0 56 IDSQ = 200 mA (RF OFF) ID POUT GL 1.2 31.5 f = 900 MHz, VDS = 3.5 V, 15.0 70 0.53 Pin = +20 dBm, Rg = 100 IDSQ = 200 mA (RF OFF) f = 1900 MHz, VDS = 5.0 V, Pin = +25 dBm, Rg = 100 = 25C) TEST CONDITIONS
MAX
ADD
ADD
ID Notes: 1. Pin = 0 dBm
ABSOLUTE MAXIMUM RATINGS1 (TC = 25 C)
SYMBOLS VDS VGS IDS IGS PT TCH TSTG PARAMETERS Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current (IGF, IGR) Total Power Dissipation2 Channel Temperature Storage Temperature UNITS V V A mA W C C RATINGS 8 -4 2.8 25 15 150 -65 to +150
RECOMMENDED OPERATING LIMITS
SYMBOLS VDS TCH GCOMP PARAMETERS Drain to Source Voltage Channel Temperature Gain Compression1 UNITS V C dB TYP 3.5 MAX 6.0 +125 3.0
Note: 1. Recommended maximum gain compression is 3.0 dB at VDS > 4.2 V.
ORDERING INFORMATION
PART NUMBER NE6510179A-T1-A NE6510179A-A QTY 1 K/Reel Bulk, 100 piece min.
Note: 1. Operation in excess of any one of these parameters may result in permanent damage.
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
20
Total Power Dissipation, PD (W)
15
RTH = 8C/W 10
5
0
25C
50
100
150
Case Temperature, TC (C)
NE6510179A TYPICAL PERFORMANCE CURVES
DRAIN CURRENT vs. DRAIN VOLTAGE
3
2.50
(TA = 25C)
TRANSCONDUCTANCE AND DRAIN CURRENT vs. GATE VOLTAGE
1.00
2.5
Transconductance, GM (mS)
VGS = 0V
2.00
0.8
Drain Current, ID (A)
2.0 -0.2 V 1.5 -0.4 V 1.0 -0.6 V 0.5 -0.8 V 0 0 1 2 3 4 5 6 -1.0 V
1.50
0.6
1.00
0.4
0.50
0.2
0 -1.0
-.80
-.60
-.40
-.20
0.00
0
Drain Voltage, VD (V)
Gate Voltage, GV (V)
ARRHENIUS PLOTS vs. JUNCTION TEMPERATURE
1.0E+07
MAXIMUM AVAILABLE GAIN vs. FREQUENCY
30
Maximum Available Gain, GMAG (dB)
Arrhenius Plots, MTTF (hours)
25
1.0E+06 1.35E+06 Hrs (TCH = 110C) 1.0E+05 EA = 1.0EV
20
15
1.0E+04
1805 Hrs (TCH = 217C)
2.2 V, 200 mA 10 4.6 V, 300 mA 3.5 V, 150 mA 5
1.0E+03 1.6 1.8 2 2.2 2.4 2.6 2.8 3
0.1
4.0
Junction Temperature, T/TCH (1/K/1000)
Frequency, GHz
Drain Current, ID (A)
NE6510179A TYPICAL SCATTERING PARAMETERS (TA = 25C)
Note: This file and many other s-parameter files can be downloaded from www.cel.com
j50 j25 j100
90 120 60
150
j10
30
0
10
25
50
100
0
180
0
-j10
-j25 -j50
-j100
Coordinates in Ohms Frequency in GHz VD = 3.5 V, ID = 150 mA
-150
-30
-120 -90
-60
NE6510179A VD = 3.5 V, ID = 150 mA
FREQUENCY GHz 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 3.10 3.20 3.30 3.40 3.50 3.60 3.70 3.80 3.90 4.00 Note: 1. Gain Calculation:
MAG = |S21| |S12|
S11 MAG 0.956 0.955 0.956 0.955 0.955 0.955 0.955 0.954 0.954 0.953 0.953 0.953 0.953 0.952 0.951 0.951 0.952 0.951 0.951 0.950 0.950 0.950 0.950 0.950 0.949 0.949 0.949 0.949 0.950 0.949 0.949 0.949 0.949 0.949 0.951 0.950 ANG 179.67 177.71 175.93 174.33 172.86 171.45 170.09 168.81 167.51 166.27 165.06 163.84 162.63 161.41 160.23 159.05 157.87 156.61 155.50 154.36 153.22 152.11 150.95 149.81 148.69 147.51 146.33 145.20 144.05 142.93 141.85 140.70 139.60 138.47 137.45 136.38 MAG 2.813 2.343 2.016 1.765 1.573 1.418 1.289 1.187 1.097 1.021 0.955 0.898 0.847 0.802 0.761 0.726 0.693 0.662 0.635 0.611 0.587 0.565 0.545 0.528 0.510 0.494 0.478 0.465 0.452 0.439 0.427 0.416 0.405 0.394 0.384 0.374
S21 ANG 82.32 79.83 77.44 75.21 73.00 70.78 68.54 66.57 64.47 62.40 60.35 58.36 56.38 54.34 52.35 50.45 48.50 46.53 44.55 42.67 40.91 39.04 37.19 35.36 33.69 31.91 30.21 28.41 26.80 25.05 23.40 21.75 20.23 18.70 17.31 15.99 MAG 0.018 0.018 0.018 0.018 0.019 0.019 0.019 0.019 0.019 0.019 0.019 0.019 0.020 0.020 0.020 0.020 0.020 0.020 0.020 0.020 0.020 0.020 0.020 0.021 0.020 0.021 0.021 0.021 0.021 0.022 0.022 0.022 0.023 0.023 0.023 0.023
S12 ANG 5.20 5.02 5.41 5.58 5.93 6.32 6.08 6.55 6.48 6.73 6.94 6.98 7.33 7.16 7.48 8.27 8.79 8.70 8.69 8.71 8.92 8.87 9.41 9.87 10.32 10.98 11.59 12.25 13.46 13.17 13.36 13.56 13.89 13.96 14.08 14.68 MAG 0.842 0.842 0.843 0.843 0.842 0.842 0.841 0.843 0.842 0.842 0.843 0.843 0.843 0.842 0.844 0.844 0.845 0.844 0.845 0.846 0.847 0.847 0.848 0.850 0.852 0.852 0.854 0.855 0.857 0.858 0.860 0.862 0.864 0.865 0.869 0.875
S22 ANG 176.48 175.21 173.93 172.76 171.63 170.47 169.22 168.26 167.19 166.12 165.06 164.05 163.06 161.99 160.95 159.99 159.02 158.03 157.05 156.09 155.25 154.33 153.36 152.46 151.70 150.82 149.99 149.11 148.32 147.55 146.79 146.14 145.53 145.01 144.58 144.34
K 0.29 0.34 0.40 0.46 0.51 0.57 0.62 0.67 0.72 0.78 0.82 0.88 0.92 0.98 1.05 1.10 1.13 1.20 1.23 1.27 1.31 1.37 1.41 1.44 1.50 1.52 1.59 1.58 1.61 1.62 1.64 1.64 1.64 1.65 1.59 1.59
MAG1 (dB) 21.87 21.09 20.38 19.81 19.24 18.79 18.33 17.95 17.59 17.26 16.92 16.65 16.36 16.12 14.59 13.76 13.19 12.48 12.10 11.66 11.27 10.81 10.49 10.17 9.81 9.50 9.17 8.94 8.71 8.41 8.21 8.00 7.85 7.64 7.67 7.50
(K
K 2- 1
). When K 1, MAG is undefined and MSG values are used. MSG =
2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21|
MAG = Maximum Available Gain MSG = Maximum Stable Gain
NE6510179A TYPICAL SCATTERING PARAMETERS (TA = 25C)
Note: This file and many other s-parameter files can be downloaded from www.cel.com
j50 j25 j100
-22.5 -26 -20
j10
-32
0
10
25
50
100
0
8
-j10
-j25 -j50
-j100
Coordinates in Ohms Frequency in GHz VD = 5.0 V, ID = 300 mA
14 17.5 20
NE6510179A VD = 5.0 V, ID = 300 mA
FREQUENCY GHz 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 3.10 3.20 3.30 3.40 3.50 3.60 3.70 3.80 3.90 4.00 Note: 1. Gain Calculation:
MAG = |S21| |S12|
S11 MAG 0.964 0.963 0.964 0.963 0.963 0.962 0.962 0.962 0.962 0.961 0.961 0.960 0.960 0.960 0.959 0.959 0.959 0.958 0.958 0.957 0.957 0.957 0.957 0.957 0.956 0.956 0.956 0.956 0.957 0.955 0.955 0.955 0.955 0.956 0.957 0.956 ANG 179.30 177.40 175.60 174.00 172.60 171.20 169.80 168.50 167.20 166.00 164.80 163.60 162.40 161.10 159.90 158.80 157.60 156.30 155.20 154.00 152.90 151.80 150.60 149.50 148.30 147.20 146.00 144.80 143.70 142.50 141.50 140.30 139.20 138.00 137.00 135.90 MAG 3.090 2.574 2.215 1.940 1.730 1.559 1.418 1.306 1.207 1.124 1.053 0.990 0.934 0.885 0.841 0.803 0.766 0.733 0.704 0.677 0.652 0.627 0.606 0.587 0.568 0.550 0.534 0.519 0.505 0.491 0.478 0.467 0.455 0.443 0.431 0.421
S21 ANG 82.99 80.69 78.48 76.44 74.41 72.36 70.30 68.47 66.55 64.61 62.72 60.89 59.08 57.16 55.31 53.56 51.76 49.92 48.04 46.31 44.72 42.98 41.20 39.47 37.95 36.32 34.72 32.99 31.47 29.85 28.29 26.73 25.35 23.91 22.54 21.29 MAG 0.013 0.013 0.013 0.013 0.014 0.014 0.014 0.014 0.015 0.015 0.015 0.015 0.016 0.016 0.016 0.016 0.017 0.017 0.017 0.018 0.018 0.018 0.018 0.019 0.019 0.019 0.020 0.020 0.021 0.021 0.022 0.022 0.023 0.023 0.024 0.024
S12 ANG 11.07 12.04 13.41 14.52 15.48 16.81 17.13 18.35 18.76 19.61 20.22 20.71 21.61 21.54 22.43 23.77 24.20 24.45 24.16 24.58 24.86 24.96 25.58 25.67 26.27 27.34 28.08 28.08 29.01 28.15 28.47 28.09 28.10 27.80 27.69 27.86 MAG 0.863 0.862 0.863 0.863 0.862 0.862 0.861 0.862 0.861 0.861 0.861 0.862 0.861 0.860 0.861 0.861 0.861 0.859 0.860 0.862 0.863 0.861 0.862 0.864 0.865 0.865 0.868 0.868 0.869 0.869 0.870 0.873 0.873 0.874 0.877 0.883
S22 ANG 175.80 174.60 173.30 172.10 171.00 169.90 164.30 167.60 166.50 165.40 164.30 163.30 162.30 161.20 160.10 159.10 158.20 157.20 156.10 155.10 154.30 153.40 152.40 151.40 150.70 149.80 149.00 148.00 147.20 146.50 145.70 145.00 144.40 143.90 143.50 143.20
K 0.38 0.45 0.52 0.59 0.63 0.71 0.77 0.83 0.85 0.92 0.97 1.03 1.05 1.10 1.16 1.22 1.22 1.29 1.32 1.33 1.36 1.42 1.46 1.43 1.49 1.54 1.52 1.54 1.51 1.57 1.55 1.55 1.54 1.54 1.48 1.49
MAG1 (dB) 23.76 22.97 22.31 21.74 20.92 20.47 20.06 19.70 19.06 18.75 18.46 17.10 16.30 15.55 14.76 14.17 13.71 13.09 12.76 12.33 11.99 11.58 11.27 11.01 10.63 10.30 10.01 9.81 9.61 9.24 8.99 8.89 8.64 8.53 8.44 8.32
(K
K 2- 1
). When K 1, MAG is undefined and MSG values are used. MSG =
2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21|
MAG = Maximum Available Gain MSG = Maximum Stable Gain
NE6510179A APPLICATION CIRCUIT (1.93-1.99 GHz)
VG J3 C3 C9 C11 VD J4 C2 C8 C10 GND
P1 GND
C13 RFIN
C12
RFOUT
J1 C5 C6 U1 8X TI R1 C1 C4
J2
100637
NE65XXX79A-EV
Contact CEL Engineering for artwork and more detailed information.
.034
J3 VG C13 C11 C9 C3 L = .890 W = .010 L = .874 W = .010 C2 C8 C10 C12
J4 VD
J1 RF Input
C5 L = .280 W = .050
R1 NE6510179A C4 L = .260 W = .050 C1
J2 RF Output
1 4 2 1 1 1 2 1 1 2 2 2 1 1 1 2
TF-100637 MA101J MCR03J200 100A6RBCP150X 100A4R3CP150X 100A240CP150X 100A4R7CP150X 100A1RBCP150X TAJB475K010R GRM40X7R104K025BL GRM40C0G102J050BD NE6510179A 703401 1250-003 2052-5636-02 C2, C3 R1 C14 NOT USED C4 C5. C1 C6 C7 NOT USED C12, C13 C10, C11 C8, C9 U1 P1 J3, J4 J1, J2
TEST CIRCUIT BLK 2-56 X 3/16 PHILLIPS PAN HEAD CASE 1 100 pF CAP MURATA 0603 20 OHM RESISTOR ROHM CASE A 6.8 pF CAP ATC CASE A 4.3 pF CAP ATC CASE A 24 pF CAP ATC CASE A 4.7 pF CAP ATC CASE A 1.8 pF CAP ATC CASE B 4.7 F CAP AVX 0805 .1 F CAP MURATA 0805 1000 pF CAP MURATA IC NEC GROUND LUG CONCORD FEEDTHRU MURATA FLANGE MOUNT JACK RECEPTACLE
17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2
NE6510179A TYPICAL APPLICATION CIRCUIT PERFORMANCE at VDS = 3 V and VDS = 5 V
PAE & GAIN vs. OUTPUT POWER
14 12 10 60
14
PAE & GAIN vs. OUTPUT POWER
FC = 1.96 GHz, VDS = 5 V
50 45
50
12 40 10
Gain, GA (dB)
Gain, GA (dB)
40
35
PAE (%)
8 30 6 20 4 2 FC = 1.96 GHz, VDS = 3 V 20 22 24 26 28
Gain, IDSQ = 200 mA Gain, IDSQ = 600 mA PAE, IDSQ = 200 mA PAE, IDSQ = 600 mA
8 6
25 20 4 15
Gain, IDSQ = 200 mA Gain, IDSQ = 600 mA PAE, IDSQ = 200 mA PAE, IDSQ = 600 mA
10
10 5 0 36
2 0 20 22 24 26 28
0
0 30 32 34
30
32
34
Output Power, POUT (dBm)
Output Power, POUT (dBm)
GAIN & SATURATED POWER vs. FREQUENCY
16 33
16
GAIN & SATURATED POWER vs. FREQUENCY
36
14
32
14
35
12
31
12
34
10 POUT = 16 dB for Gain 29 dB for PSAT
Gain, IDSQ = 100 mA Gain, IDSQ = 800 mA POUT, IDSQ = 100 mA POUT, IDSQ = 800 mA
30
10 POUT = 16 dB for Gain 29 dB for PSAT
Gain, IDSQ = 100 mA Gain, IDSQ = 800 mA POUT, IDSQ = 100 mA POUT, IDSQ = 800 mA
33
VDS = 5 V
8 1.91 1.92 1.94 1.96
VDS = 3 V 8 1.90 1.92 1.94
1.96
1.98
2.00
29 2.02
1.98
2.00
32 2.02
Frequency, f (GHz)
Frequency, f (GHz)
Third Order Intermodulation Distortion, IM3 (dBc)
15 FC = 1.96 GHz, POUT = Each Tone
Third Order Intermodulation Distortion, IM3 (dBc)
THIRD ORDER INTERMODULATION vs. TOTAL OUTPUT POWER
VDS = 3 V
20
THIRD ORDER INTERMODULATION vs. TOTAL OUTPUT POWER
15
IDSQ = 100 mA IDSQ = 200 mA IDSQ = 400 mA IDSQ = 600 mA IDSQ = 800 mA
20
25
25
30
30
35
IDSQ = 100 mA IDSQ = 200 mA IDSQ = 400 mA IDSQ = 600 mA IDSQ = 800 mA
35
40
40 FC = 1.96 GHz, POUT = Each Tone
VDS = 5 V
45 20 21 22 23 24 25 26 27 28 29 30
45 20 21 22 23 24 25 26 27
28
29
30
Total Output Power, POUT (dBm)
Total Output Power, POUT (dBm)
Saturated Power, PSAT (dBm)
Saturated Power, PSAT (dBm)
Gain, GA (dB)
Gain, GA (dB)
PAE (%)
30
NE6510179A TYPICAL APPLICATION CIRCUIT PERFORMANCE at VDS = 3 V and VDS = 5 V
ACPR vs. OUTPUT POWER ACPR vs. OUTPUT POWER
35
Third Order Intermodulation Distortion, IM3 (dBc) Third Order Intermodulation Distortion, IM3 (dBc)
ACPR1 885 KHz 40
35
FC = 1.96 GHz, VDS = 5 V ACPR1 64 CH IS95 CDMA
885 KHz
40
45 ACPR2 1.25 MHz
45
50
50 55
ACPR2 1.25 MHz
55
100 mA 200 mA 400 mA 600 mA 800 mA
60 FC = 1.96 GHz, VDS = 3 V, 64 CH IS95 CDMA 65 23 24 25 26 27 28 29 30 31 32 33
Output Power, POUT (dBm)
60
65 23 25 27 29 31
Output Power, POUT (dBm)
IDSQ = 100 mA IDSQ = 200 mA IDSQ = 400 mA IDSQ = 600 mA IDSQ = 800 mA
33
35
NE6510179A NONLINEAR MODEL
SCHEMATIC
LGX GATE 0.001 nH 0.75 nH LG
Q1
RDX 0.2 ohms RDBX 400 ohms
LD 0.65 nH
LDX 0.01 nH DRAIN
CGS PKG 0.1 pF
CBSX 100 pF
CDS PKG 0.1 pF
RSX 0.05 ohms
LSX 0.001 nH
SOURCE
FET NONLINEAR MODEL PARAMETERS (1)
Parameters VTO VTOSC ALPHA BETA GAMMA GAMMADC(2) Q DELTA VBI IS N RIS RID TAU CDS RDB CBS CGSO(3) CGDO(4) DELTA1 DELTA2 FC VBR Q1 -0.756 0 2 2.245 0 0.01 1.7 0 0.6 1e-16 1 0 0 10e-12 0.5e-12 0.001 0 20e-12 4e-12 0.3 0.2 0.5 Infinity Parameters RG RD RS RGMET KF AF TNOM XTI EG VTOTC BETATCE FFE Q1 0.05 0.001 0.001 0 0 1 27 3 1.43 0 0 1
UNITS
Parameter capacitance inductance resistance Units picofarads nanohenries ohms
MODEL RANGE Frequency: 0.5 to 4 GHz Bias: VDS = 2.2 V to 5 V, ID = 150 mA to 300 mA Date: 3/29/2000
(1) Series IV Libra TOM Model The parameter in Libra corresponds to the parameter in PSpice: (2) GAMMADC GAMMA (3) CGSO CGS (4) CGDO CGD
Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale.
11/04/2002
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix -A indicates that the device is Pb-free. The -AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL's understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information.
Restricted Substance per RoHS Lead (Pb) Mercury Cadmium Hexavalent Chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 100 PPM < 1000 PPM < 1000 PPM < 1000 PPM Concentration contained in CEL devices -A Not Detected Not Detected Not Detected Not Detected Not Detected Not Detected -AZ (*)
If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative.
Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall CEL's liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. See CEL Terms and Conditions for additional clarification of warranties and liability.

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