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| Preliminary 4 Typical Applications * GSM/DCS Dual-Band Handsets * Cellular/PCS Dual-Band Handsets RF2416 DUAL-BAND 2.7V LOW NOISE AMPLIFIER * General Purpose Amplification * Commercial and Consumer Systems Product Description The RF2416 is a dual-band low noise amplifier with bypass switch designed for use as a front-end for 950MHz GSM and DCS1800/PCS1900 applications. It may also be used for dual-band cellular/PCS application. The 900MHz LNA is a single-stage amplifier with bypass switch; the 1800/1900 LNA is a two-stage amplifier with bypass switch. Both amplifiers have excellent noise figure and high linearity in both high gain and bypass/low gain mode. The device is packaged in a 3mmx3mm, 12 pin, leadless chip carrier. 0.80 0.65 1.00 0.85 0.60 0.24 typ 4 PLCS 2 0.30 0.18 1.25 sq. 0.95 12 max 0.05 0.01 0.75 0.50 0.50 0.23 0.13 4 PLCS Dimensions in mm. NOTES: 1 Shaded Pin is Lead 1. 2 Dimension applies to plated terminal and is measured between 0.02 mm and 0.25 mm from terminal end. Pin 1 identifier must exist on top surface of package by identification mark or 3 feature on the package body. Exact shape and size is optional. 4 Package Warpage: 0.05 mm max. 5 Die thickness allowable: 0.305 mm max. Optimum Technology Matching(R) Applied Si BJT Si Bi-CMOS u Package Style: LCC, 12-Pin, 3x3 GaAs HBT SiGe HBT GaAs MESFET Si CMOS Features * Low Noise and High Intercept Point * Dual-Band Application GSM900 and DCS1800/PCS1900 * Power Down Control * Switchable Gain HB GND1 12 HB IN 1 11 10 9 HB OUT HB BIAS 2 Logic Control HB GND2 VCC1 HB 8 HB SELECT LB BIAS 3 4 LB IN 5 LB GND 6 LB OUT 7 LB SELECT Ordering Information RF2416 RF2416 PCBA Dual-Band 2.7V Low Noise Amplifier Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A2 010810 4-199 GENERAL PURPOSE AMPLIFIERS 3.00 sq. 4 0.65 0.30 RF2416 Absolute Maximum Ratings Parameter Supply Voltage Input RF Level Storage Temperature Preliminary Rating -0.5 to +6.0 +10 -40 to +150 Unit VDC dBm C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Parameter Operating Range Overall Frequency Range Supply Voltage (VCC) Power Down Voltage (VBIAS) Logic Control Voltage Level Operating Ambient Temperature Input Impedance Output Impedance Specification Min. Typ. Max. 800 1800 2.7 2.7 0 -40 1000 2000 3.0 3.0 3.0 +85 Unit MHz MHz V V V oC Condition Low Band Operation High Band Operation VCC1 HB, VCC2 HB, VCC1 LB HB BIAS, LB BIAS HB SELECT, LB SELECT 4 GENERAL PURPOSE AMPLIFIERS 2.8 2.8 50 50 T = 25C, RF=950MHz, VCC1LB=VCC2LB=2.78V, LBSelect=0V, ZIN =ZO =50 950MHz Performance High Gain Mode Gain Gain Variation Over Temperature Range Gain Variation Over Frequency Band Noise Figure Reverse Isolation Input IP3 Input P1dB Input VSWR Output VSWR Total Current Draw 14 15.5 17 +0.5 +0.5 1.1 21 +5.0 -9 2.0 dB dB dB dB dB dBm dB 15 +2.0 -12 4.8 2:1 2:1 6.0 mA 950MHz Performance Bypass Mode Gain Gain Reduction Input IP3 Input P1dB Input VSWR Output VSWR Total Current Draw -8 12.0 -1 -6 21.5 15.0 +2 -3 dB dBc dBm dB 900MHz LNA ENABLED, 1900MHz LNA DISABLED. ICC + IPD T = 25C, RF=950MHz, VCC1LB=VCC2LB=2.78V, LBSelect=2.7V, ZIN =ZO =50 2.5:1 2:1 See Application Notes 4-200 Rev A2 010810 Preliminary Parameter 1850MHz Performance High Gain Mode Gain Gain Variation Over Temperature Range Gain Variation Over Frequency Band Noise Figure Reverse Isolation Input IP3 Input P1dB Input VSWR Output VSWR Total Current Draw 15 17.5 19 +0.5 +0.5 1.5 20 +1.0 -10 2.1 dB dB dB dB dB dBm dB RF2416 Specification Min. Typ. Max. Unit Condition T = 25C, RF=1850MHz, VCC1HB=2.78V, HBSelect=0V, ZIN =ZO =50 15 -2.0 -13 8.2 mA 1850MHz Performance Bypass Mode Gain Gain Reduction Input IP3 Input P1dB Input VSWR Output VSWR Total Current Draw AGC Settling Time Rise and Fall Time -7 22 12.0 +5 -5 23 15.0 +8 -3 24 dB dBc dBm dB 1900MHz LNA ENABLED, 900MHz LNA DISABLED. ICC + IPD T = 25C, RF=1850MHz, VCC1HB=2.78V, HBSelect=2.7V, ZIN =ZO =50 2:1 2.5:1 See Applications Notes 10 10 s s Rev A2 010810 4-201 GENERAL PURPOSE AMPLIFIERS 2:1 2:1 10 4 RF2416 Pin 1 Function HB IN Description DCS1800/PCS1900 RF input pin. Preliminary Interface Schematic To Bias VCC1 HB Circuit HB IN HB GND1 2 HB BIAS HB BIAS is set to the supply voltage at high gain mode. For bypass mode see "Gain Select Possibility". HB VREF/P 4 GENERAL PURPOSE AMPLIFIERS 3 LB BIAS LB BIAS is set to the supply voltage at high gain mode. For bypass mode see "Gain Select Possibility". LB VREF/PD 4 LB IN GSM900 RF input pin. To Bias Circuit LB OUT LB IN LB GND 5 LB GND LNA emittance inductance. Total inductance is comprised of package+bondwire+L2 on PCB. 6 LB OUT 7 LB SELECT GSM900 Amplifier Output pin. This pin is an open-collector output. It must be biased to VCC through a choke or matching inductor. This pin is typically matched to 50 with a shunt bias/matching inductor and series blocking/matching capacitor. Refer to application schematics. This pin selects high gain and bypass for GSM900. Select < 0.8V, high gain. Select > 1.8V, low gain. This pin selects high gain and bypass for DCS1800/PCS1900. Select < 0.8V, high gain. Select > 1.8V, low gain. DCS1800 Amplifier Output pin. This pin is an open-collector output. It must be biased to VCC through a choke or matching inductor. This pin is typically matched to 50 with a shunt bias/matching inductor and series blocking/matching capacitor. Refer to application schematics. LB SELECT 8 HB SELECT HB SELECT 9 HB OUT HB OUT HB GND2 4-202 Rev A2 010810 Preliminary Pin 10 Function HB GND2 Description LNA2 emittance inductance. Total inductance is comprised of package+bondwire+L5 on PCB. RF2416 Interface Schematic 11 VCC1 HB Open collector for first stage LNA of DCS1800/PCS1900. It must be biased to VCC through a choke or matching inductor. VCC1 HB HB GND1 12 HB GND1 Rev A2 010810 4-203 GENERAL PURPOSE AMPLIFIERS LNA1 emittance inductance. Total inductance is comprised of package+bondwire+L7 on PCB. 4 RF2416 Application Notes Preliminary Bypass Mode Configurations The RF2416 may be placed into either high gain or bypass mode via the HB SELECT and LB SELECT pins for high band and low band operation, respectively. The high gain state is selected by asserting the select pin for the appropriate band to a voltage level of less than 0.8V. For Bypass operation, there are two possible methods for placing the RF2416 into this low gain state. The table below shows the two possible Bypass states for each mode. RF2416 Bypass Mode Possibilities Gain Select (HB Mode) HB BIAS (V) 0 2.7 LB BIAS (V) 0 2.7 VCC1_HB and VCC2_HB (V) 2.78 2.78 VCC1_LB (V) 2.78 2.78 Current (mA) 1.4 1.9 Current (mA) 0.8 1.5 4 GENERAL PURPOSE AMPLIFIERS 2.7 2.7 Gain Select (LB Mode) 2.7 2.7 For both Bypass configurations, the select pin for the appropriate band must be placed at a level greater than or equal to 1.8V. The difference between the Bypass possibilities is determined by the specific application's ability to change the voltage of the bias pins independently of VCC. The advantage of the ability to assert the bias pins to 0V when in Bypass mode is shown by the decreased current draw when in this Bypass configuration. 4-204 Rev A2 010810 Preliminary Evaluation Board Schematic (Download Bill of Materials from www.rfmd.com.) VCC1 HB VCC1 HB RF2416 C14 100 pF C13 0.1 F C12 100 pF C11 0.1 F L4 3.3 nH 9 C10 0.7 pF 50 strip J4 HB OUT HB SELECT C9 0.1 F C8 0.1 F LB SELECT C7 2.0 pF 50 strip J3 LB OUT L7 1.0 nH L1 47 nH J1 HB IN HB BIAS C2 0.1 F 50 strip C1 33 nF R1 0 2 L6 3.3 nH L5 1.0 nH 50 strip 1 12 11 10 4 GENERAL PURPOSE AMPLIFIERS Logic Control 8 3 4 5 6 7 R2 0 LB BIAS C3 0.1 F 2416310, rev. 3 L3 8.2 nH 50 strip L2 6.8 nH C4 33 nF R3 0 C5 0.1 F C6 100 pF J2 LB IN VCC1 LB P1 P1-1 1 2 P1-3 3 CON3 HB BIAS GND LB BIAS P2-3 P2-1 P2 1 2 3 CON3 HB SELECT GND LB SELECT P3-3 P3-1 P3 1 2 3 CON3 VCC1 HB GND VCC1 LB Rev A2 010810 4-205 RF2416 Evaluation Board Layout Board Size 2" x 2" Board Thickness 0.060", Board Material FR-4, Multi-Layer Preliminary 4 GENERAL PURPOSE AMPLIFIERS 4-206 Rev A2 010810 Preliminary Low Band Bypass Mode (S11) 1.0 0.6 RF2416 Low Band Bypass Mode (S22) 0.6 Swp Max 6GHz 2. 0 1.0 Swp Max 6GHz 2. 0 0.8 5 GHz 0 3. 0.8 10.0 10.0 10 MHz 10 MHz 10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0 0 4.5 GHz 950 MHz 3 GHz .0 -0. 6 -0. 6 4 GHz -2 -0.8 -0.8 -2 .0 -1.0 Low Band High Gain Mode (S11) 1.0 0.6 Swp Max 6GHz Low Band High Gain Mode (S22) 1.0 0.6 Swp Max 6GHz 0.8 0.8 -1.0 2.0 2. 0 0 3. 5 GHz 10.0 10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 10 MHz 5 GHz 4.0 5.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0 0 10 MHz 10.0 4 GHz 3.5 GHz 4.5 GHz 500 MHz 3 GHz 3.5 GHz 1.5 GHz -0.8 -0. 6 -0. 6 -0.8 .0 -2 -2 .0 2 GHz Swp Min 0.01GHz Rev A2 010810 -1.0 -1.0 -3 -3 .4 -0 .4 -0 .0 .0 950 MHz -4. 0 -5.0 -4. 0 -5.0 -0.2 -0.2 500 MHz 950 MHz Swp Min 0.01GHz -10.0 0.2 4.0 5.0 0. 4 -10.0 -3 .4 -0 .4 -0 1.5 GHz Swp Min 0.01GHz 0 3. 5.5 GHz -3 . 0 5.5 GHz 4 GHz Swp Min 0.01GHz 4.0 5.0 -4. 0 -5.0 -4. 0 -5.0 -0.2 -0.2 950 MHz 10.0 4-207 GENERAL PURPOSE AMPLIFIERS -10.0 0.2 4.0 5.0 0. 4 -10.0 .0 0. 4 0. 4 0.2 3.0 4.0 5.0 0.2 10.0 4 RF2416 High Band Bypass Mode (S11) 1.0 0.6 Preliminary High Band Bypass Mode (S22) 6 0. Swp Max 6GHz 2.0 1.0 Swp Max 6GHz 2. 0 10.0 0 0 1850 MHz 10 MHz 10 MHz GENERAL PURPOSE AMPLIFIERS .0 -2 -0.8 Swp Min 0.01GHz -1.0 1 GHz -0.8 -0 .6 3 GHz -0. 6 .0 -2 1.5 GHz High Band High Gain Mode (S11) 1.0 0.6 -1.0 2.0 0.6 Swp Max 6GHz 1.0 0.8 0.8 0 3. 2.0 10.0 10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 10 MHz 2 GHz 2.5 GHz 4.5 GHz 3 GHz 500 MHz 4 GHz 4.0 5.0 4 GHz 10 MHz 10.0 -10.0 0 - - 1850 MHz .0 -2 -0. 6 -0.8 -0. 6 1.5 GHz Swp Min 0.01GHz -0.8 .0 -2 -1.0 S-Parameter Conditions: All plots shown were taken at VCC =2.78V and Ambient Temperature=25C. Note: All S11 and S22 plots shown were taken from an RF2416 while on a 2416310 evaluation board. The data was captured without the external input or output tuning components in place, and the reference point at the HB IN and HB OUT pins for high band and LB IN and LB OUT for low band. 4-208 -1.0 Rev A2 010810 -3 -3 4 0. 4 0. .0 .0 1850 MHz 1 GHz 1 GHz Swp Min 0.01GHz -4. 0 -5.0 -4. 0 -5.0 -0.2 0 0.2 4.0 5.0 -0.2 0. 4 -10.0 -3 .4 -0 -0 .4 4 GHz 1850 MHz High Band High Gain Mode (S22) Swp Max 6GHz 0 3. 3.5 GHz -4 .0 -5. 0 -3 .0 -4. 0 -5.0 -0.2 5 GHz 2 GHz 500 MHz 4.5 GHz 1 GHz 2 -0. Swp Min 0.01GHz -10.0 -10.0 4 4 GHz 10.0 10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0.2 4.0 5.0 0. 0 3. 0.8 0.8 4 .0 0. 4 0. 4 0 3. 0 4. 5.0 10.0 0.2 0.2 4.0 5.0 10.0 |
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