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2SK3779-01R
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
200406
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power
Applications
Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)
Maximum ratings and characteristic
Absolute maximum ratings (Tc=25C unless otherwise specified)
Item Drain-source voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. Power Dissipation Operating and Storage Temperature range Symbol VDS VDSX ID ID(puls] VGS IAR EAS EAR dVDS/dt dV/dt PD Tch Tstg Ratings 250 250 59 236 30 59 1115.2 41 20 5 210 3.13 +150 -55 to +150 Unit V V A A V A mJ mJ Remarks VGS=-30V
Equivalent circuit schematic
Drain(D)
Gate(G)
Note *1 Note *2 Note *3
Source(S) Note *1:Tch < 150C,Repetitive and Non-repetitive = Note *2:StartingTch=25C,IAS=24A,L=3.25mH, VCC=48V,RG=50 EAS limited by maximum channel temperature and avalanch current. See to the `Avalanche Energy' graph Note *3:Repetitive rating:Pulse width limited by maximum channel temperature. See to the `Transient Theemal impedance' graph Note *4:IF< -ID, -di/dt=50A/s,VCC< BVDSS, Tch< 150C = = =
kV/s VDS= 250V < kV/s Note *4 Tc=25C W Ta=25C C C
Electrical characteristics (Tc =25C unless otherwise specified)
Item Drain-Source Breakdown Voltaget Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transcondutance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time ton Turn-Off Time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol BVDSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VSD trr Qrr Symbol Rth(ch-c) Rth(ch-a) Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=250V VDS=200V VGS=30V ID=29.5A VGS=0V VGS=0V VDS=0V VGS=10V
Min.
250 3.0 Tch=25C Tch=125C
Typ.
Max.
5.0 25 250 100 53
Units
V V A nA m S pF
ID=29.5A VDS=25V VDS=75V VGS=0V f=1MHz VCC=72V ID=29.5A VGS=10V RGS=10 VCC=150V ID=32A VGS=10V IF=59A VGS=0V Tch=25C IF=59A VGS=0V -di/dt=100A/s Tch=25C Test Conditions channel to case channel to ambient
12
43 24 3800 5400 530 795 35 52.5 40 60 62 93 70 105 20 30 80 120 30 45 25 38 1.20 1.50 370 4.5
ns
nC
V ns C
Thermalcharacteristics
Item Thermal resistance www.fujielectric.co.jp/fdt/scd
Min.
Typ.
Max.
0.595 40.0
Units
C/W C/W
1
2SK3779-01R
Characteristics
Allowable Power Dissipation PD=f(Tc)
FUJI POWER MOSFET
300
120
Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25 C
20V 10V 8V
100
200
80 7V
PD [W]
ID [A]
60
6.5V 100 40
20
VGS=6.0V
0 0 25 50 75 100 125 150
0 0 5 10
Tc [C]
VDS [V]
100
Typical Transfer Characteristic ID=f(VGS):80 s pulse test,VDS=25V,Tch=25C
100
Typical Transconductance gfs=f(ID):80 s pulse test,VDS=25V,Tch=25C
10 10
ID[A]
1 1
0.1 0.1 0.1
0
1
2
3
4
5
6
7
8
9
10
gfs [S]
1
10
100
VGS[V]
ID [A]
0.20
Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 s pulse test,Tch=25C
VGS=6V 6.5V
0.15
Drain-Source On-state Resistance RDS(on)=f(Tch):ID=29.5A,VGS=10V
0.15 7V
RDS(on) [ ]
0.10
RDS(on) [ ]
max.
0.10
typ. 0.05
8V 0.05 20V 10V
0.00 0 10 20 30 40 50 60 70 80 90 100 110
0.00 -50 -25 0 25 50 75 100 125 150
ID [A]
Tch [C]
2
2SK3779-01R
Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250A
FUJI POWER MOSFET
7.0 6.5 6.0 5.5 5.0
14
Typical Gate Charge Characteristics VGS=f(Qg):ID=59A,Tch=25 C
12 Vcc= 50V max. 10 125V 200V
VGS(th) [V]
4.5
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 min.
VGS [V]
4.0
8
6
4
2
0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140
Tch [C]
Qg [nC]
10
4
Typical Capacitance C=f(VDS):VGS=0V,f=1MHz
Ciss
1000
Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 s pulse test,Tch=25 C
10
3
100
Coss
C [pF]
10
2
IF [A]
Crss
-1 0 1 2 3
10
10
1
1
10
0
10
10
10
10
10
0.1 0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
VDS [V]
VSD [V]
10
4
Typical Switching Characteristics vs. ID t=f(ID):Vcc=72V,VGS=10V,RG=10
1200
Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)<=59A
IAS=24A
1000 10
3
800 tr IAS=36A 600
t [ns]
10
2
td(off) td(on) tf
EAV [mJ]
400 10
1
IAS=59A
200
10
0
0
-1
10
10
0
10
1
10
2
10
3
0
25
50
75
100
125
150
ID [A]
starting Tch [C]
3
2SK3779-01R
FUJI POWER MOSFET
10
2
Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25 C,Vcc=48V
Single Pulse
Avalanche Current I AV [A]
10
1
10
0
10
-1
10 -8 10
-2
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
tAV [sec]
10
1
Transient Thermal Impedance Zth(ch-c)=f(t):D=0
10
0
Zth(ch-c) [C/W]
10
-1
10
-2
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t [sec]
http://www.fujielectric.co.jp/fdt/scd/
4

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