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BIPOLARICS, INC.
Part Number B12V105
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
PRODUCT DATA SHEET
FEATURES: * High Gain Bandwidth Product f = 10 GHz typ @ I C = 10 mA t
DESCRIPTION AND APPLICATIONS:
Bipolarics' B12V105 is a high performance silicon bipolar transistor intended for use in low noise application at VHF, UHF and microwave frequencies. High performance low noise performance can be realized at 2 mA or less making the B12V105 an excellent choice for battery applications. From 10 mA to greater than 25 mA, ft is nominally 10 GHz. Maximum recommended continuous current is 40 mA. A broad range of packages are offered including SOT-23, SOT143, plastic and ceramic 0.085" Micro-X, 0.070" Stripline and unencapsulated dice.
*
Low Noise Figure 1.6 dB typ at 1 GHz 2.0 dB typ at 2 GHz
* High Gain
|S21| 2 = 18.1 dB @ 1 GHz 12.8 dB @ 2 GHz
Absolute Maximum Ratings:
SYMBOL PARAMETERS RATING UNITS
*
Dice, Plastic, Hermetic and Surface Mount packages available
VCBO VCEO VEBO IC CONT T J TSTG
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction Temperature Storage Temperature
20 12 1.5 40 200 -65 to 150
V V V mA o C o C
PERFORMANCE DATA:
*
Electrical Characteristics (TA = 25oC)
PARAMETERS & CONDITIONS
VCE =8V, I C = 10 mA unless stated
SYMBOL
UNIT
MIN.
TYP.
MAX.
f
t
Gain Bandwidth Product Insertion Power Gain: f = 1.0 GHz, I C = 10 mA I C = 25 mA f = 2.0 GHz, I C = 10 mA IC = 25 mA f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz ZS = 50 f = 1MHz
GHz
10 17.5 18.1 12.8 12.6
|S 21 | 2
P1d B G1d B NF hFE ICBO IEBO C CB
Power output at 1dB compression: Gain at 1dB compression: Noise Figure: VCE =8V, I C = 2mA Forward Current Transfer Ratio: VCE = 8V, IC = 10 mA Collector Cutoff Current Emitter Cutoff Current : VEB =1V Collector Base Capacitance: VCB = 8V : VCB =8V
dBm dBm dB 50
12 15 1.6 100 250
A A f = 1MHz pF 0.11
0.2 1.0
PAGE 2
BIPOLARICS, INC.
Part Number B12V105
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
PRODUCT DATA SHEET
TYPICAL S PARAMETERS:
BIAS CONDITION: S-MATRIX: V CE = 5 V, IC = 2 mA Z L = 50.0 + J 0.0 Z S = 50.0 + J 0.0
(NOTE: S-Parameters were taken in a ceramic Micro-X package; See package outline 35)
FREQ. S21 GHz dB 0.20000 0.40000 0.60000 0.80000 1.00000 1.20000 1.40000 1.60000 1.80000 2.00000 2.20000 2.40000 2.60000 2.80000 3.00000 3.20000 3.40000 3.60000 3.80000 4.00000 4.20000 0.8709 0.8511 0.8128 0.7762 0.7244 0.6760 0.6309 0.5888 0.5754 0.5623 0.5370 0.5248 0.5370 0.5128 0.5069 0.4954 0.5011 0.5128 0.5432 0.5308 0.5188 Mag
S11 Ang -19 -32 -45 -55 -68 -80 -100 -114 -124 -137 -144 -165 -174 178 173 166 162 153 152 152 144 5.888 4.623 4.027 3.388 3.273 3.162 3.235 3.019 2.786 2.722 2.691 2.317 2.264 2.187 1.949 1.883 1.737 1.717 1.566 1.479 1.445 Mag
S21 Ang 172 157 142 137 126 122 116 106 102 88 82 86 84 78 78 73 70 69 63 64 58 0.0316 0.0478 0.0660 0.0776 0.0876 0.0933 0.1035 0.1071 0.1096 0.1148 0.1174 0.1188 0.1216 0.1244 0.1258 0.1303 0.1333 0.1348 0.1333 0.1348 0.1380 Mag
S12 Ang 80 76 61 59 53 51 48 47 46 46 45 46 48 49 50 51 53 55 57 60 61 0.9549 0.9120 0.8511 0.8511 0.7161 0.6998 0.6531 0.6165 0.6456 0.6025 0.5888 0.5370 0.5308 0.5188 0.4897 0.5011 0.4677 0.4773 0.4773 0.4677 0.5069 Mag
S22 Ang -10 -17 -25 -32 -34 -37 -47 -49 -51 -54 -57 -63 -64 -70 -72 -78 -81 -87 -96 -93 -102 15.4 13.3 12.1 10.6 10.3 10.0 10.2 9.6 8.9 8.7 8.6 7.3 7.1 6.8 5.8 5.5 4.8 4.7 3.9 3.4 3.2
PAGE 3
BIPOLARICS, INC.
Part Number B12V105
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
PRODUCT DATA SHEET
TYPICAL S PARAMETERS:
BIAS CONDITION: S-MATRIX: V CE = 5 V, IC = 5 mA Z L = 50.0 + J 0.0 Z S = 50.0 + J 0.0
(NOTE: S-Parameters were taken in a ceramic Micro-X package; See package outline 35, 36) FREQ. S21 GHz dB 0.20000 0.40000 0.60000 0.80000 1.00000 1.20000 1.40000 1.60000 1.80000 2.00000 2.20000 2.40000 2.60000 2.80000 3.00000 3.20000 3.40000 3.60000 3.80000 4.00000 4.20000 0.7762 0.7885 0.6382 0.6165 0.5248 0.4677 0.4168 0.3672 0.3548 0.3467 0.3548 0.3235 0.3672 0.3801 0.3935 0.4120 0.4216 0.4786 0.4731 0.4841 0.5495 Mag -24 -44 -60 -72 -88 -102 -124 -138 -146 -158 -176 171 163 157 153 146 142 135 132 131 128 Ang 12.02 10.47 8.810 7.244 6.456 6.025 5.188 4.677 4.168 3.901 3.801 3.388 3.273 3.019 2.818 2.722 2.570 2.511 2.290 2.187 2.162 Mag 151 134 106 80 72 57 44 30 20 9 -4 -17 -27 -39 -49 -60 -70 -82 -92 -101 -112 Ang 0.0223 0.0398 0.0512 0.0568 0.0616 0.0691 0.0776 0.0822 0.0860 0.0954 0.1047 0.1071 0.1122 0.1174 0.1230 0.1318 0.1348 0.1380 0.1412 0.1445 0.1548 Mag 74 72 60 59 57 57 57 57 58 59 60 62 63 63 64 65 65 67 69 70 68 Ang 0.9225 0.8709 0.7413 0.7079 0.6095 0.5559 0.5495 0.5128 0.5069 0.4677 0.4570 0.4216 0.4315 0.4265 0.4168 0.4073 0.3890 0.3890 0.3981 0.3870 0.3801 Mag -14 -25 -31 -36 -38 -40 -48 -46 -50 -52 -58 -60 -62 -67 -70 -75 -79 -83 -86 -88 -99 Ang 21.6 20.4 18.9 17.2 16.2 15.6 14.3 13.4 12.4 12.0 11.6 10.6 10.3 9.6 9.0 8.7 8.2 8.0 7.2 6.8 6.7 S11 S21 S12 S22
PAGE 4
BIPOLARICS, INC.
Part Number B12V105
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
PRODUCT DATA SHEET
TYPICAL S PARAMETERS:
BIAS CONDITION: S-MATRIX: V CE = 8 V, IC = 10 mA Z L = 50.0 + J 0.0 Z S = 50.0 + J 0.0
(NOTE: S-Parameters were taken in a ceramic Micro-X package; See package outline 35, 36) FREQ. S21 GHz Mag Ang Mag Ang Mag Ang Mag Ang dB S11 S21 S12 S22
0.20000 0.40000 0.60000 0.80000 1.00000 1.20000 1.40000 1.60000 1.80000 2.00000 2.20000 2.40000 2.60000 2.80000 3.00000 3.20000 3.40000 3.60000 3.80000 4.00000 4.20000
0.6025 0.5888 0.4954 0.4786 0.4265 0.4027 0.4027 0.3935 0.3890 0.3890 0.4216 0.4168 0.4623 0.4786 0.4897 0.4841 0.4954 0.5495 0.5754 0.5821 0.5888
-46 -78 -109 -122 -136 -151 -168 -180 176 170 158 149 145 140 138 133 128 123 121 120 117
15.84 14.12 11.09 9.332 7.498 6.456 6.025 5.308 4.897 4.518 4.365 3.890 3.715 3.388 3.198 3.019 2.818 2.660 2.371 2.137 2.018
160 144 124 118 109 102 99 94 90 85 82 79 77 74 74 71 67 66 62 62 58
0.0177 0.0301 0.0407 0.0457 0.0506 0.0537 0.0616 0.0676 0.0707 0.0741 0.0803 0.0812 0.0912 0.0933 0.1000 0.1059 0.1011 0.1188 0.1188 0.1230 0.1318
70 65 56 58 58 60 62 62 64 66 65 67 69 68 71 70 72 72 72 76 74
0.8912 0.7762 0.6309 0.6095 0.5128 0.5248 0.4677 0.4315 0.4415 0.4027 0.4120 0.3758 0.3845 0.3672 0.3758 0.3880 0.3630 0.3935 0.3548 0.3890 0.3548
-17 -30 -36 -40 -39 -42 -49 -50 -52 -53 -58 -62 -64 -70 -71 -76 -75 -84 -90 -86 -94
24.0 23.0 20.9 19.4 17.5 16.2 15.6 14.5 13.8 13.1 12.8 11.8 11.4 10.6 10.1 9.6 9.0 8.5 7.5 6.6 6.1
PAGE 5
BIPOLARICS, INC.
Part Number B12V105
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
PRODUCT DATA SHEET
TYPICAL S
BIAS CONDITION: S-MATRIX:
PARAMETERS:
V CE = 8 V, IC = 25 mA Z L = 50.0 + J 0.0
Z S = 50.0 + J 0.0
(NOTE: S-Parameters were taken in a ceramic Micro-X package; See package outline 35, 36)
FREQ. S21 GHz dB Mag
S11 Ang Mag
S21 Ang Mag
S12 Ang Mag
S22 Ang
0.20000 0.40000 0.60000 0.80000 1.00000 1.20000 1.40000 1.60000 1.80000 2.00000 2.20000 2.40000 2.60000 2.80000 3.00000 3.20000 3.40000 3.60000 3.80000 4.00000 4.20000
0.4466 0.4265 0.3715 0.3672 0.3467 0.3019 0.3311 0.3801 0.4027 0.4120 0.4365 0.4315 0.4731 0.4897 0.4786 0.4954 0.5308 0.5559 0.5432 0.5370 0.5623
-55 -98 -127 -140 -145 -158 -165 -172 -176 168 157 149 146 141 141 137 134 128 128 129 125
17.78 14.62 12.44 9.855 8.035 7.244 6.025 5.308 4.677 4.265 4.027 3.672 3.467 3.235 3.019 2.804 2.732 2.630 2.398 2.364 2.137
154 136 116 105 102 96 93 88 86 84 80 77 76 73 73 70 68 65 64 64 61
0.0149 0.0234 0.0301 0.0342 0.0407 0.0467 0.0543 0.0638 0.0645 0.0699 0.0785 0.0915 0.0891 0.0933 0.1000 0.1071 0.1109 0.1202 0.1206 0.1258 0.1348
56 62 64 68 69 71 72 72 74 76 77 77 78 78 80 80 79 80 79 81 80
0.7585 0.6456 0.5069 0.5011 0.4466 0.4786 0.4027 0.3715 0.3630 0.3630 0.3548 0.3273 0.3235 0.3162 0.3198 0.3198 0.2951 0.3162 0.2851 0.3162 0.3162
-22 -34 -33 -36 -33 -34 -43 -41 -46 -47 -53 -57 -61 -67 -69 -74 -76 -82 -94 -91 -90
25.0 23.3 21.9 19.9 18.1 17.2 15.6 14.5 13.4 12.6 12.1 11.3 10.8 10.2 9.6 9.2 8.7 8.4 7.6 7.1 6.6
PAGE 6
BIPOLARICS, INC.
Part Number B12V105
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
04 Package: 0.145" Plastic Macro-X
86 Package: 0.085" Plastic Micro-X, Surface Mount
0.02 .51
1
2
0.032+0.015 2.34+0.38 0.008+0.002 0.203+0.051
4 3
.020+.010 0.51+.25 0.106+0.015 2.67+0.38
0.026+0.001 0.66+0.13 0.085+0.005 2.16+0.13 0.060+0.01 1.52+0.25
85 Package: 0.085" Plastic Micro-X
87 Package: 0.085" Plastic Micro-X, Short Lead
.020 .51
4
1
3
2
.60+0.10 1.52+.26 .065 2.15 5 .008+.002 .20+.050
.020 .51
.215+.010 5.46+.25
PAGE 7
BIPOLARICS, INC.
02J Package: SOT-23J
0.30 0.51
Part Number B12V105
02 Package: SOT-23
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
1.39 1.57 0.45 0.60 1.90
2.25 2.75 0.95
2.65 3.04 0.79 1.1
0.00 0.10
0.10 0.45 0.60
14 Package: SOT-143
92 Package: TO-92
PAGE 8
BIPOLARICS, INC.
Part Number B12V105
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
ORDERING INFORMATION:
P/N Including Pkg Temp Range/App
85 Package: Micro-X 0.085" Ceramic
B12V105 00 B12V105 02 B12V105 14 B12V105 35 B12V105 92
-55 to +125C -40 to +85C -40 to +85C -55 to +125C -40 to +85C
NOTES: (unless otherwise specified)
in 1. Dimensions are (mm) 2. Tolerances: in .xxx = .005 mm .xx = .13 3. All dimensions nominal; subject to change without notice
LEAD
14, 85, 86, 87, 35 & 04 Packages
1
Base
2
Emitter
3
Collector
4
Emitter
BIPOLARICS, INC. 46766 Lakeview Blvd. Fremont, CA 94538 Phone: (510) 226-6565 FAX: (510) 226-6765

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