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MITSUBISHI Nch POWER MOSFET FS5AS-06 HIGH-SPEED SWITCHING USE FS5AS-06 OUTLINE DRAWING 1.5 0.2 Dimensions in mm 0.5 0.1 6.5 5.0 0.2 r 5.5 0.2 1.0MAX. 2.3MIN. 10MAX. 1.0 A 0.5 0.2 0.8 0.9MAX. 2.3 2.3 2.3 q w e wr q GATE w DRAIN e SOURCE r DRAIN e 10V DRIVE VDSS .................................................................................. 60V rDS (ON) (MAX) .............................................................. 0.16 ID ............................................................................................ 5A Integrated Fast Recovery Diode (TYP.) ............. 45ns q MP-3 APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg -- (Tc = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings 60 20 5 20 5 5 20 20 -55 ~ +150 -55 ~ +150 0.26 Unit V V A A A A A W C C g Feb.1999 L = 100H MITSUBISHI Nch POWER MOSFET FS5AS-06 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage (Tch = 25C) Test conditions ID = 1mA, VGS = 0V VGS = 20V, VDS = 0V VDS = 60V, VGS = 0V ID = 1mA, VDS = 10V ID = 2A, VGS = 10V ID = 2A, VGS = 10V ID = 2A, VDS = 5V VDS = 10V, VGS = 0V, f = 1MHz Limits Min. 60 -- -- 2.0 -- -- -- -- -- -- -- Typ. -- -- -- 3.0 0.12 0.24 4.0 280 120 35 15 8 18 9 1.0 -- 45 Max. -- 0.1 0.1 4.0 0.16 0.32 -- -- -- -- -- -- -- -- 1.5 6.25 -- Unit V A mA V V S pF pF pF ns ns ns ns V C/W ns Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = 30V, ID = 2A, VGS = 10V, RGEN = RGS = 50 -- -- -- -- -- -- IS = 2A, VGS = 0V Channel to case IS = 5A, dis/dt = -100A/s PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 40 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 2 101 7 5 3 2 100 7 5 3 2 tw = 10ms 32 100ms 1ms DC 10ms 24 16 8 0 0 50 100 150 200 10-1 7 5 TC = 25C 3 Single Pulse 2 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 10 VGS = 20V 10V 8V 7V Tc = 25C Pulse Test 6V CASE TEMPERATURE TC (C) OUTPUT CHARACTERISTICS (TYPICAL) 20 VGS = 20V 10V 8V DRAIN CURRENT ID (A) 16 DRAIN CURRENT ID (A) PD = 20W 7V 8 12 Tc = 25C Pulse Test 6 8 6V 4 5V 4 5V 2 0 0 1.0 2.0 3.0 4.0 5.0 0 0 0.4 0.8 1.2 1.6 2.0 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS5AS-06 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 5.0 Tc = 25C Pulse Test ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 200 Tc = 25C Pulse Test VGS = 10V DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (m) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 4.0 160 3.0 120 20V 2.0 ID = 8A 5A 2A 80 1.0 40 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) 0 0 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 10 Tc = 25C VDS = 10V Pulse Test FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 101 7 5 4 3 2 100 7 5 4 3 2 TC = 25C 75C 125C VDS = 5V Pulse Test DRAIN CURRENT ID (A) 6 4 2 FORWARD TRANSFER ADMITTANCE yfs (S) 8 0 0 4 8 12 16 20 10-1 0 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 Tch = 25C SWITCHING CHARACTERISTICS (TYPICAL) 2 102 Tch = 25C VDD = 30V VGS = 10V RGEN = RGS = 50 tf SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 104 f = 1MHZ 7 VGS = 0V 5 3 2 103 7 5 3 2 102 7 5 3 2 7 5 4 3 2 101 7 5 4 3 2 10-1 td(off) td(on) Ciss tr Coss Crss 3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) 2 3 4 5 7 100 2 3 4 5 7 101 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS5AS-06 HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 20 VGS = 0V Pulse Test GATE-SOURCE VOLTAGE VGS (V) 20 Tch = 25C ID = 5A 16 SOURCE CURRENT IS (A) 16 12 VDS = 10V 12 8 20V 40V 8 TC = 125C 75C 25C 4 4 0 0 4 8 12 16 20 0 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 VGS = 10V ID = 1/2ID 5 Pulse Test 4 3 2 100 7 5 4 3 2 10-1 -50 0 50 100 150 5.0 THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = 10V ID = 1mA GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) 4.0 3.0 2.0 1.0 0 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) CHANNEL TEMPERATURE Tch (C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 D = 1.0 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse PDM tw T D= tw T 1.2 1.0 0.8 0.6 0.4 -50 0 50 100 150 10-1 -4 10 2 3 5710-3 2 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999 CHANNEL TEMPERATURE Tch (C) |
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