 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MegaMOSTMFET Module N-Channel Enhancement Mode VMO 400-02F VDSS ID25 RDS(on) 1 11 10 = 200 V = 418 A = 4.2 m 2 11 2 1 10 Symbol VDSS VDGR V GS V GSM I D25 I DM PD TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; R GS = 10 k Continuous Transient T K = 25C T K = 25C, t P = 10 s TC = 25C T K = 25C Maximum Ratings 200 200 20 30 418 1672 2450 1640 -40 ...+150 150 -40 ... +125 V V V V A A W W C C C V~ V~ Features q q 1 = Drain 10 = Kelvin Source 2 = Source 11 = Gate 50/60 Hz IISOL 1 mA t = 1 min t=1s 3000 3600 q q q Mounting torque (M6) Terminal connection torque (M5) typical including screws 2.25-2.75/20-25 Nm/lb.in. 2.5-3.7/22-33 Nm/lb.in. 250 g q International standard package Direct Copper Bonded Al2O3 ceramic base plate Isolation voltage 3600 V~ Low RDS(on) HDMOSTM process Low package inductance for high speed switching Kelvin Source contact for easy drive Applications Symbol Test Conditions Characteristic Values (T J = 25C, unless otherwise specified) min. typ. max. 200 3 6 500 TJ = 25C TJ = 125C V V q q q VDSS VGS(th) I GSS I DSS RDS(on) VGS = 0 V, ID = 12 mA V DS = 20 V, ID = 120 mA VGS = 20 V DC, VDS = 0 V DS = VDSS , VGS = 0 V V DS = 0.8 * VDSS, VGS = 0 V q AC motor speed control for electric vehicles DC servo and robot drives Switched-mode and resonant-mode power supplies DC choppers nA Advantages q q q q 2.5 mA 12 mA 4.2 m VGS = 10 V, ID = 0.5 * ID25 Pulse test, t 300 s, duty cycle d 2 % Easy to mount Space and weight savings High power density Low losses IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Tel: 408-982-0700 Fax: 408-496-0670 IXYS Semiconductor Edisonstr. 15, D-68623 Lampertheim, Germany Tel: +49-6206-5030 Fax: +49-6206-503629 VMO 400-02F Symbol Test Conditions Characteristic Values (T J = 25C, unless otherwise specified) min. typ. max. 380 53 VGS = 0 V, VDS = 25 V, f = 1 MHz 9.6 3.4 210 VGS = 10 V, V DS = 0.5 * VDSS , ID = 0.5 * ID25 RG = 1 (External) 500 900 350 2300 VGS = 10 V, V DS = 0.5 * VDSS , ID = 0.5 * ID25 420 1150 S nF nF nF ns ns ns ns nC nC nC 0.051 K/W with 30 m heat transfer paste 0.076 K/W Dimensions in mm (1 mm = 0.0394") gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd RthJC RthJK V DS = 10 V; ID = 0.5 * ID25 pulsed Source-Drain Diode Symbol IS I SM V SD trr Test Conditions V GS = 0 V Characteristic Values (T J = 25C, unless otherwise specified) min. typ. max. 418 1672 0.9 1.2 A A V Repetitive; pulse width limited by TJM IF = I S; VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS, -di/dt = 1200 A/s, VDS = 100 V 600 ns IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 VMO 400-02F 1250 ID A VGS = 10 V 9V 8V 7V 1250 ID A VDS = 30 V 1000 1000 750 6V 750 500 500 250 5V 250 T J = 125C TJ = 25C 0 0 1 2 3 4 VDS 5 V 0 6 0 2 4 VGS 6 V 8 Fig. 1 Typical output characteristics ID = f (VDS ) 1,4 RDS(on) 1,3 norm. 1,2 VGS = 10 V Fig. 2 Typical transfer characteristics ID = f (VGS) 2,5 RDS(on) norm. 2,0 ID = 210 A 1,1 V GS = 15 V 1,5 1,0 1,0 0,9 0,8 0 200 400 600 800 1000 A ID 1200 0,5 -50 -25 0 25 50 75 Fig. 3 Typical RDS(on) = f (ID), normalized 450 ID 400 A 350 300 250 0,9 200 150 100 0,7 50 0 0 25 50 75 100 TS 125 C 150 0,8 1,2 VDSS V GS(th) 1,1 norm. 1,0 Fig. 4 RDS(on) = f (TJ), normalized 100 TJ 125 C150 V GS(th) VDSS 0,6 -50 -25 0 25 50 75 100 TJ 125 C150 Fig. 5 Continuous drain current ID = f (TK) Fig. 6 VDSS = f (TJ), VGS(th) = f (TJ), normalized IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Tel: 408-982-0700 Fax: 408-496-0670 IXYS Semiconductor Edisonstr. 15, D-68623 Lampertheim, Germany Tel: +49-6206-5030 Fax: +49-6206-503629 VMO 400-02F 15 V GS V VDS = 100 V ID = 210 A IG = 12 mA 10000 ID A 12 1000 Limited by RDS(on) t = 1 ms 9 100 6 t = 100 ms t = 10 ms 3 10 DC operation T S = 25C T J = 150C non-repetitive 0 0 500 1000 1500 2000 2500 nC 3000 Qg 1 1 10 100 VDS V 1000 Fig. 7 Typical turn-on gate charge characteristics 1000 nF C 100 Ciss Fig. 8 Forward Bias Safe Operating Area, ID = f (VDS ) 1200 A 1000 IS 800 600 Coss T J = 125C TJ = 25C 10 Crss 400 200 1 0 5 10 15 VDS 20 V 25 0 0.00 0 0.25 0.50 0.75 1.00 1.25 V 1.50 VSD Fig. 9 Typical capacitances C = f (VDS), f = 1 MHz 1000 A 900 Id 800 700 600 500 400 300 200 100 0 0.0001 0.001 0.01 0.1 tp s D= 0.2 D= 0.1 Fig. 10 Typical forward characteristics of reverse diode, IS = f (VSD) 0.1 K/W D = 0.5 TK = 80C ZthJK D= 0.2 D= 0.3 D= 0.4 D= 0.5 D= 0.7 D=0.05 D=0.02 D=0.01 D = single pulse 0.01 D= 0.1 1 0.001 0.001 0.01 0.1 1 tp s 10 Fig. 11 Drain current versus pulse width and duty cycle Fig. 12 Transient thermal resistance ZthJK = f (tp) IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 |
Price & Availability of VMO400-02F
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |