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| 1N914 THRU 1N4454 SILICON EPITAXIAL PLANAR DIODES Features Silicon Epitaxial Planar Diodes for general purpose and switching The types 1N4149, 1N4447 and 1N4449 are also available in glass case DO-34. D IM E N S IO N S D IM A B C D IM E N S IO N S D IM A B C D in c h e s M in . 0 .6 3 0 M ax. 0 .11 4 0 .0 7 5 0 .0 1 7 M in . 1 6 .0 mm M ax. 2 .9 1 .9 0 .4 2 N o te D in c h e s M in . 1 .0 8 3 M ax. 0 .1 5 4 0 .0 7 5 0 .0 2 0 M in . 2 7 .5 0 mm M ax. 3 .9 1 .9 0 .5 2 N o te Electrical Characteristics Type Peak reverse voltage VRM V 1N914 1N4149 1) Max. aver. rectified current IO mA 75 150 200 150 150 150 2) Max. power dissip. at 25 Ptot mW 500 500 500 400 400 500 500 500 400 400 400 400 Max. junction temperature Tj 200 200 200 175 175 200 200 200 175 175 175 175 Max. forward voltage drop Max. reverse current Max. reverse recovery time VF V 1.0 1.0 1.0 0.55 0.55 1.0 1.0 1.0 0.54 0.50 0.55 1.0 at IF mA 10 10 200 0.10 0.10 0.10 20 30 0.50 0.10 0.01 10 In nA 25 25 100 50 50 100 25 25 50 50 50 100 at VR V 20 20 50 30 50 25 20 20 30 30 20 50 trr nS Max. 4.0 Max. 4.0 Max. 4.0 Max. 2.0 Max. 2.0 Max. 2.0 Max. 4.0 Max. 4.0 Max. 4.0 Max. 10 Max. 4.0 Conditions IF=10mA, VR=6V, RL=100 IF=10mA, VR=6V, RL=100 , to IR=1mA , to IR=1mA 100 100 50 40 75 35 100 100 40 40 30 75 1N4150 1N4152 1N4153 1N4154 1N4447 1N4449 1) 1) IF=IR=10 to 200 mA, to 0.1 IF IF=10mA, VR=6V, RL=100 IF=10mA, VR=6V, RL=100 IF=10mA, VR=6V, RL=100 IF=10mA, VR=6V, RL=100 IF=10mA, VR=6V, RL=100 IF=IR=10mA, to IR=1mA IF=IR=10mA, to IR=1mA IF=IR=10mA, to IR=1mA , to IR=1mA , to IR=1mA , to IR=1mA , to IR=1mA , to IR=1mA 150 150 150 150 150 150 1N4450 1N4451 1N4453 1N4454 Notes: (1) These diodes are also avaiable in glass case DO-34 (2) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature Parameters for diodes in case DO-34: Ptot=300mW TS=-65 to +175 TJ=175 Rtha 0.4K/mW 1 This datasheet has been download from: www..com Datasheets for electronics components. |
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