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| FDS6900AS May 2005 FDS6900AS General Description Dual N-Ch PowerTrench(R) SyncFETTM Features * Q2: Optimized to minimize conduction losses Includes SyncFET Schottky body diode RDS(on) = 22m @ VGS = 10V RDS(on) = 28m @ VGS = 4.5V * Q1: Optimized for low switching losses Low Gate Charge (11nC typical) RDS(on) = 27m @ VGS = 10V RDS(on) = 34m @ VGS = 4.5V * 100% RG (Gate Resistance) Tested The FDS6900AS is designed to replace two single SO8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6900AS contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the lowside switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology. 8.2A, 30V 6.9A, 30V S1D2 D S1D2 D S1D2 D G1 D 1 2 3 Q2 Q1 8 7 6 5 Dual N-Channel SyncFet SO-8 Pin 1 SO- D1 D1 S S2 G2 G 4 S S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage TA = 25C unless otherwise noted Parameter Q2 30 (Note 1a) Q1 30 20 6.9 20 2 1.6 1 0.9 -55 to +150 Units V V A W - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation Drain Current 20 8.2 30 (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range C Thermal Characteristics RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 C/W C/W Package Marking and Ordering Information Device Marking FDS6900AS FDS6900AS Device FDS6900AS FDS6900AS_NL (Note 4) Reel Size 13" 13" Tape width 12mm 12mm Quantity 2500 units 2500 units FDS6900AS Rev B(X) (c)2005 Fairchild Semiconductor Corporation FDS6900AS Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSS TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage (Note 2) Test Conditions VGS = 0 V, ID = 1 mA ID = 250 uA VGS = 0 V, ID = 10 mA, Referenced to 25C ID = 250 A, Referenced to 25C VDS = 24 V, VGS = 0 V VGS = 20 V, VDS = 0 V Type Min Typ Max Units Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 30 30 27 22 500 1 100 V mV/C A nA Off Characteristics On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance VDS = VGS, VDS = VGS, ID = 1 mA ID = 250 A 1 1 1.9 1.9 -3.2 -4.2 17 23 21 22 30 27 3 3 V mV/C ID = 10 mA, Referenced to 25C ID = 250 uA, Referenced to 25C VGS = 10 V, ID = 8.2 A VGS = 10 V, ID = 8.2 A, TJ = 125C VGS = 4.5 V, ID = 7.6 A ID = 6.9 A VGS = 10 V, VGS = 10 V, ID = 6.9 A, TJ = 125C VGS = 4.5 V, ID = 6.2 A VGS = 10 V, VDS = 5 V VDS = 5 V, VDS = 5 V, VDS = 15 V, f = 1.0 MHz ID = 8.2 A ID = 6.9 A VGS = 0 V, Q1 22 36 28 27 38 34 m ID(on) gFS On-State Drain Current Forward Transconductance Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 30 20 25 21 570 600 180 150 70 70 2.8 2.2 A S Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance pF pF pF 4.9 3.8 Switching Characteristics td(on) tr td(off) tf td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time (Note 2) VDD = 15 V, ID = 1 A, VGS = 10V, RGEN = 6 VDD = 15 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 10 9 5 4 26 23 3 3 11 10 15 9 16 14 6 4 19 18 10 8 42 32 6 6 20 19 27 18 29 25 12 8 ns ns ns ns ns ns ns ns FDS6900AS Rev B (X) FDS6900AS Electrical Characteristics Symbol Parameter (continued) TA = 25C unless otherwise noted Test Conditions (Note 2) Type Min Typ Max Units Switching Characteristics Qg(TOT) Qg Qgs Qgd Total Gate Charge at Vgs=10V Total Gate Charge at Vgs=5V Gate-Source Charge Gate-Drain Charge Q2: VDS = 15 V, ID = 8.2A Q1: VDS = 15 V, ID = 6.9A Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 (Note 3) (Note 2) (Note 2) (Note 2) 10 11 5.8 6.1 1.6 1.7 2.1 2.2 15 15 8.2 8.5 nC nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS Trr Qrr Trr Qrr VSD Maximum Continuous Drain-Source Diode Forward Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge Drain-Source Diode Forward Voltage IF = 8.2 A, diF/dt = 300 A/s IF = 6.9 A, diF/dt = 100 A/s VGS = 0 V, IS = 2.3 A VGS = 0 V, IS = 5 A VGS = 0 V, IS = 1.3 A 2.3 1.3 15 6 19 10 0.6 0.7 0.7 0.7 1.0 1.2 A ns nC ns nC V (Note 3) Q2 Q2 Q1 Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 78C/W when mounted on a 2 0.5in pad of 2 oz copper b) 125C/W when mounted on a 0.02 in2 pad of 2 oz copper c) 135C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. See "SyncFET Schottky body diode characteristics" below. 4. FDS6900AS_NL is a lead free product. The FDS6900AS_NL marking will appear on the reel label. FDS6900AS Rev B (X) FDS6900AS Typical Characteristics: Q2 30 VGS = 10V 4.0V 3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.4 VGS = 3.0V 2.2 2 1.8 1.6 1.4 1.2 1 0.8 3.5V 4.0V 4.5V 5.0V 6.0V 10V ID, DRAIN CURRENT (A) 6.0V 4.5V 20 3.0V 10 2.5V 0 0 0.5 1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V) 2.5 3 0 5 10 15 20 ID, DRAIN CURRENT (A) 25 30 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.06 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 8.2A VGS = 10V ID = 4A RDS(ON), ON-RESISTANCE (OHM) 0.05 1.4 1.2 0.04 1 0.03 TA = 125 C o 0.8 0.02 TA = 25oC 0.6 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 0.01 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance Variation with Temperature. 30 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VDS = 5V 25 ID, DRAIN CURRENT (A) VGS = 0V IS, REVERSE DRAIN CURRENT (A) 10 20 1 TA = 125 C o 15 TA = 125 C 10 o 0.1 25oC -55 C o 5 0.01 -55oC 25 C 0 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4 o 0.001 0 0.2 0.4 0.6 0.8 VSD, BODY DIODE FORWARD VOLTAGE (V) 1 Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6900AS Rev B (X) FDS6900AS Typical Characteristics: Q2 10 VGS, GATE-SOURCE VOLTAGE (V) ID =8.2A 800 f = 1MHz VGS = 0 V CAPACITANCE (pF) VDS = 10V 20V 600 Ciss 400 8 6 15V 4 Coss 200 2 Crss 0 0 3 6 Qg, GATE CHARGE (nC) 9 12 0 0 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 7. Gate Charge Characteristics. 100 RDS(ON) LIMIT ID, DRAIN CURRENT (A) 10 1ms 10ms 100ms 1s 1 DC VGS = 10V SINGLE PULSE o RJA = 135 C/W TA = 25 C 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 o Figure 8. Capacitance Characteristics. 50 100s P(pk), PEAK TRANSIENT POWER (W) 40 SINGLE PULSE RJA = 135C/W TA = 25C 30 10s 20 0.1 10 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 RJA(t) = r(t) * RJA RJA = 135 C/W P(pk) t1 t2 SINGLE PULSE 0.01 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS6900AS Rev B (X) FDS6900AS Typical Characteristics Q1 20 VGS = 10V 16 ID, DRAIN CURRENT (A) 6.0V 12 4.5V 4.0V 3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.2 VGS = 3.0V 2 1.8 1.6 3.5V 1.4 4.0V 1.2 1 0.8 0 0.4 0.8 1.2 1.6 VDS, DRAIN TO SOURCE VOLTAGE (V) 2 0 4 8 12 ID, DRAIN CURRENT (A) 16 20 4.5V 5.0V 6.0V 10V 8 3.0V 4 2.5V 0 Figure 12. On-Region Characteristics. Figure 13. On-Resistance Variation with Drain Current and Gate Voltage. 0.07 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 6.9A VGS = 10V ID = 3.5A RDS(ON), ON-RESISTANCE (OHM) 0.06 1.4 1.2 0.05 1 0.04 TA = 125 C o 0.8 0.03 TA = 25 C o 0.6 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 0.02 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 14. On-Resistance Variation with Temperature. 20 IS, REVERSE DRAIN CURRENT (A) VDS = 5V 16 ID, DRAIN CURRENT (A) Figure 15. On-Resistance Variation with Gate-to-Source Voltage. 100 VGS = 0V 10 o 1 TA = 125 C 25 C -55 C o o 12 0.1 8 TA = 125oC -55oC 0.01 4 25 C 0 1 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4 o 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 16. Transfer Characteristics. Figure 17. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6900AS Rev B (X) FDS6900AS Typical Characteristics Q1 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 6.9A 800 f = 1 MHz VGS = 0 V 8 CAPACITANCE (pF) VDS = 10V 20V 600 Ciss 6 15V 400 4 Coss 200 2 Crss 0 0 2 4 6 8 Qg, GATE CHARGE (nC) 10 12 0 0 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 18. Gate Charge Characteristics. 100 RDS(ON) LIMIT ID, DRAIN CURRENT (A) 10 1ms 10ms 100ms 1s 1 10s DC VGS = 10V SINGLE PULSE o RJA = 135 C/W TA = 25oC 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 P(pk), PEAK TRANSIENT POWER (W) 50 Figure 19. Capacitance Characteristics. 100s 40 SINGLE PULSE RJA = 135C/W TA = 25C 30 20 0.1 10 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 20. Maximum Safe Operating Area. Figure 21. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RJA(t) = r(t) * RJA RJA = 135 C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE o 0.1 0.1 0.05 0.02 0.01 0.01 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 22. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS6900AS Rev B (X) FDS6900AS Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Fairchild's SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 23 shows the reverse recovery characteristic of the FDS6900AS. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. IDSS, REVERSE LEAKAGE CURRENT (A) 0.01 125oC 0.001 100oC 0.0001 Current: 1.6A/DIV 0.00001 25oC 0.000001 0 5 10 15 20 VDS, REVERSE VOLTAGE (V) 25 30 Time: 10nS/DIV Figure 25. SyncFET body diode reverse leakage versus drain-source voltage and temperature Figure 23. FDS6900AS SyncFET body diode reverse recovery characteristic. For comparison purposes, Figure 24 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS6690). Current: 1.6A/DIV Time: 10nS/DIV Figure 24. Non-SyncFET (FDS6690) body diode reverse recovery characteristic. FDS6900AS Rev B (X) FDS6900AS Typical Characteristics VDS VGS RGE VGS 0V tp L tP DUT IAS 0.01 + VDD IAS BVDSS VDS VDD vary tP to obtain required peak IAS tAV Figure 26. Unclamped Inductive Load Test Circuit Drain Current Same type as Figure 27. Unclamped Inductive Waveforms + 10V 50k 10F 1F - + VDD DUT VGS QG(TOT) 10V QGS QGD VGS Ig(REF Charge, (nC) Figure 28. Gate Charge Test Circuit Figure 29. Gate Charge Waveform tON td(ON) VDS + DUT VDD 0V 10% 90% 50% 10% 50% 10% 90% VDS VGS RGEN VGSPulse Width 1s RL tr tOFF td(OFF tf ) 90% VGS 0V Duty Cycle 0.1% Pulse Width Figure 30. Switching Time Test Circuit Figure 31. Switching Time Waveforms FDS6900AS Rev B (X) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST(R) ActiveArrayTM FASTrTM BottomlessTM FPSTM Build it NowTM FRFETTM CoolFETTM GlobalOptoisolatorTM CROSSVOLTTM GTOTM DOMETM HiSeCTM EcoSPARKTM I2CTM E2CMOSTM i-LoTM EnSignaTM ImpliedDisconnectTM FACTTM IntelliMAXTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM DISCLAIMER ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 |
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