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FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench(R) MOSFET
December 2004
FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench(R) MOSFET
Features
! 6A, 20V rDS(ON) = 0.028, VGS = 4.5V rDS(ON) = 0.036, VGS = 2.5V ! Extended VGS range (12 V) for battery applications ! HBM ESD Protection Level of 3.5kV Typical (note 3) ! High performance trench technology for extremely low rDS(ON) ! Low profile TSSOP-8 package
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.
Applications
! Load switch ! Battery charge ! Battery disconnect circuits
D1
G2 S2 S2 D2 G1 S1 S1 D1
D2
G1
G2
S1
S2
Pin 1
TSSOP-8
(c)2004 Fairchild Semiconductor Corporation
FDW2512NZ Rev. A
1
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FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench(R) MOSFET FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench(R) MOSFET
Absolute Maximum Ratings TA=25C unless otherwise noted
Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 4.5V, RJA = 77oC/W) Continuous (TC = 100oC, VGS = 2.5V, RJA = 77oC/W) Pulsed PD TJ, TSTG Power dissipation Derate above 25C Operating and Storage Temperature Ratings 20 12 6.0 3.3 Figure 4 1.6 13 -55 to 150 Units V V A A A W mW/oC
o
ID
C
Thermal Characteristics
RJA RJA Thermal Resistance Junction to Ambient (Note 1) Thermal Resistance Junction to Ambient (Note 2) 77 114
o
C/W
oC/W
Package Marking and Ordering Information
Device Marking 2512NZ 2512NZ Device FDW2512NZ FDW2512NZ_NL (Note 4) Package TSSOP-8 TSSOP-8 Reel Size 13" 13" Tape Width 12 mm 12 mm Quantity 2500 units 2500 units
Electrical Characteristics TA = 25C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V VDS = 16V VGS = 0V VGS = 12V VGS = 4.5V TA=100oC 20 1 5 10 250 V A A nA
On Characteristics
VGS(TH) rDS(ON) Gate to Source Threshold Voltage VGS = VDS, ID = 250A ID = 6.0A, VGS = 4.5V Drain to Source On Resistance ID = 5.9A, VGS = 4.0V ID = 5.3A, VGS = 3.1V ID = 5.3A, VGS = 2.5V 0.6 0.8 0.017 0.018 0.019 0.022 1.5 0.028 0.029 0.035 0.036 V
Dynamic Characteristics
CISS COSS CRSS RG Qg(TOT) Qg(2.5) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge at 4.5V Total Gate Charge at 2.5V Gate to Source Gate Charge Gate to Drain "Miller" Charge VDS = 10V, VGS = 0V, f = 1MHz VGS = 0.5V, f = 1MHz VGS = 0V to 4.5V VGS = 0V to 2.5V VDD = 10V ID = 6.0A Ig = 1.0mA 670 170 115 4.2 8 5.1 1.1 2.2 12 7.6 pF pF pF nC nC nC nC
FDW2512NZ Rev. A
2
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FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench(R) MOSFET FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench(R) MOSFET
Switching Characteristics
tON td(ON) tr td(OFF) tf tOFF Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time
(VGS = 4.5V) VDD = 10V, ID = 6.0A VGS = 4.5V, RGS = 16 8 57 47 58 98 158 ns ns ns ns ns ns
Drain-Source Diode Characteristics
VSD trr QRR
Notes: 1. RJA is 77 oC/W (steady state) when mounted on a 1 inch2 copper pad on FR-4. 2. RJA is 114 oC/W (steady state) when mounted on a mininum copper pad on FR-4. 3. The diode connected to the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. 4. FDW2512NZ_NL is lead free product. FDW2512NZ_NL marking will appear on the reel label.
Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge
ISD = 1.3A ISD = 6.0A, dISD/dt = 100A/s ISD = 6.0A, dISD/dt = 100A/s
-
0.7 -
1.2 24 13
V ns nC
FDW2512NZ Rev. A
3
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FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench(R) MOSFET FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench(R) MOSFET
Typical Characteristic
1.2
TA = 25C unless otherwise noted
8
POWER DISSIPATION MULTIPLIER
1.0 ID, DRAIN CURRENT (A) 6 VGS = 4.5V 4 VGS = 2.5V 2
0.8
0.6
0.4
0.2 0 0 25 50 75 100 125 150 25 50 75 100 125 150 TA , AMBIENT TEMPERATURE (oC) TA, AMBIENT TEMPERATURE (oC)
0
Figure 1. Normalized Power Dissipation vs Ambient Temperature
2 1 THERMAL IMPEDANCE DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01
Figure 2. Maximum Continuous Drain Current vs Ambient Temperature
ZJA, NORMALIZED
0.1
PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA
0.01 10-5 10-4 10-3 10-2 10-1 100 101 102 103 t, RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
400 TA = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 150 - TA 125 VGS = 2.5V
IDM, PEAK CURRENT (A)
TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION 100
10 5 10-5 10-4 10-3 10-2 10-1 t, PULSE WIDTH (s) 100 101 102 103
Figure 4. Peak Current Capability
FDW2512NZ Rev. A
4
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FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench(R) MOSFET FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench(R) MOSFET
Typical Characteristic (Continued) TA = 25C unless otherwise noted
400 100 ID, DRAIN CURRENT (A) 100s ID , DRAIN CURRENT (A) 30 40 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDD = 10V
1ms 10 10ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1 0.5 0.1 1 10 30 VDS, DRAIN TO SOURCE VOLTAGE (V) SINGLE PULSE TJ = MAX RATED TA = 25oC
20 TJ = 150oC 10 TJ = 25oC TJ = -55oC
0 1.0 1.5 2.0 2.5 VGS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
40 VGS = 10V ID, DRAIN CURRENT (A) 30 VGS = 4.5V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX TA = 25oC 10 60
Figure 6. Transfer Characteristics
rDS(ON), DRAIN TO SOURCE ON RESISTANCE (m)
VGS = 2.5V
ID = 6A 45
PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX
20
ID = 1A 30
VGS = 1.8V
0 0 0.5 1.0 1.5 VDS , DRAIN TO SOURCE VOLTAGE (V)
15 1 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Saturation Characteristics
Figure 8. Drain to Source On Resistance vs Gate Voltage and Drain Current
1.25
1.50 NORMALIZED DRAIN TO SOURCE ON RESISTANCE PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX NORMALIZED GATE THRESHOLD VOLTAGE
VGS = VDS, ID = 250A
1.25
1.00
1.00
0.75
VGS = 4.5V, ID = 6A 0.75 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 0.50 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC)
Figure 9. Normalized Drain to Source On Resistance vs Junction Temperature
Figure 10. Normalized Gate Threshold Voltage vs Junction Temperature
FDW2512NZ Rev. A
5
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FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench(R) MOSFET FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench(R) MOSFET
Typical Characteristic (Continued) TA = 25C unless otherwise noted
1.10 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE ID = 250A C, CAPACITANCE (pF) CISS = CGS + CGD 1000
1.05
COSS CDS + CGD
200
1.00
CRSS = CGD VGS = 0V, f = 1MHz 0.95 -80 -40 0 40 80 120 160 TJ , JUNCTION TEMPERATURE (oC) 70 0.1 1 VDS , DRAIN TO SOURCE VOLTAGE (V) 10 20
Figure 11. Normalized Drain to Source Breakdown Voltage vs Junction Temperature
4.5 VGS , GATE TO SOURCE VOLTAGE (V) VDD = 10V
Figure 12. Capacitance vs Drain to Source Voltage
3.0
1.5 WAVEFORMS IN DESCENDING ORDER: ID = 1A ID = 6A 0 0 2 4 6 8 10
Qg, GATE CHARGE (nC)
Figure 13. Gate Charge Waveforms for Constant Gate Currents
FDW2512NZ Rev. A
6
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FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench(R) MOSFET FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench(R) MOSFET
Test Circuits and Waveforms
VDS BVDSS L VARY tP TO OBTAIN REQUIRED PEAK IAS VGS RG IAS VDD VDD tP VDS
+
tP 0V
DUT IAS 0.01 0 tAV
Figure 14. Unclamped Energy Test Circuit
VDS RL
Figure 15. Unclamped Energy Waveforms
VDD
Qg(TOT) VDS VGS
VGS = 5V
VGS
+
VDD
Qgs2
DUT Ig(REF) VGS = 1V 0 Qg(TH) Qgs Ig(REF) 0 Qgd
Figure 16. Gate Charge Test Circuit
Figure 17. Gate Charge Waveforms
tON RL VDS VGS VGS
+
tOFF td(OFF) tr tf 90%
td(ON)
VDS
90%
0V RGS DUT 90% VGS 0 10% 50% PULSE WIDTH 50% 0 10% 10%
Figure 18. Switching Time Test Circuit
Figure 19. Switching Time Waveforms
FDW2512NZ Rev. A
7
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FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench(R) MOSFET FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench(R) MOSFET
PSPICE Electrical Model
.SUBCKT FDW2512NZ 2 1 3 ; CA 12 8 8.8e-10 CB 15 14 8.8e-10 CIN 6 8 0.5e-9 DBODY 5 7 DBODYMOD DBREAK 5 11 DBREAKMOD DPLCAP 10 5 DPLCAPMOD DESD1 91 9 DESD1MODE DESD2 91 7 DESD2MOD EBREAK 7 11 17 18 22.2 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 8 6 1 EVTHRES 6 21 19 8 1 EVTEMP 6 20 18 22 1 LGATE GATE IT 8 17 1 LDRAIN 2 5 1e-9 1 LGATE 1 9 1.49e-9 RLGATE LSOURCE 3 7 0.2e-9 RLDRAIN 2 5 10 RLGATE 1 9 14.9 RLSOURCE 3 7 2.0 MMED 16 6 8 8 MMEDMOD MSTRO 16 6 8 8 MSTROMOD MWEAK 16 21 8 8 MWEAKMOD RBREAK 17 18 RBREAKMOD 1 RDRAIN 50 16 RDRAINMOD 13.1e-3 RGATE 9 20 5.57 CA RSLC1 5 51 RSLCMOD 1e-6 RSLC2 5 50 1e3 RSOURCE 8 7 RSOURCEMOD 2e-4 RVTHRES 22 8 RVTHRESMOD 1 RVTEMP 18 19 RVTEMPMOD 1 S1A S1B S2A S2B 6 12 13 8 S1AMOD 13 12 13 8 S1BMOD 6 15 14 13 S2AMOD 13 15 14 13 S2BMOD rev July 2004
LDRAIN DPLCAP 10 RSLC2 RSLC1 51 ESLC 50 EBREAK DBREAK RLDRAIN 5 DRAIN 2
5 51
ESG + EVTEMP 9 RGATE + 18 22 20 DESD1 91 DESD2 6 8 EVTHRES + 19 8 6
MSTRO CIN 8 RSOURCE RLSOURCE LSOURCE 7 SOURCE 3
S1A 12 S1B 13 + EGS 6 8 13 8
S2A 14 13 S2B CB + EDS 5 8 14 IT 15 17
-
-
VBAT 22 19 DC 1 ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*120),2.5))} .MODEL DBODYMOD D (IS = 7.3e-12 N=0.93 RS = 20.6e-3 IKF=0.2 TRS1 = 1.7e-3 TRS2 = 2e-6 XTI=0.2 TIKF=0.001 CJO =2.0e-10 TT=1.05e-8 M = 0.58) .MODEL DBREAKMOD D (RS = 1e-1 TRS1 = 9e-3 TRS2 = -2e-5) .MODEL DPLCAPMOD D (CJO = 0.37e-9 IS = 1e-30 N = 10 M = 0.51) MODEL DESD1MOD D (BV=14 RS=1) MODEL DESD2MOD D (BV=14 N=1.3 RS=1) .MODEL MMEDMOD NMOS (VTO = 0.96 KP = 1.98 IS=1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 5.57) .MODEL MSTROMOD NMOS (VTO = 1.2 KP = 72 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL MWEAKMOD NMOS (VTO = 0.72 KP = 0.02 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 55.7 RS = 0.1) .MODEL RBREAKMOD RES (TC1 = 6e-4 TC2 = -5e-7) .MODEL RDRAINMOD RES (TC1 = 6e-4 TC2 = 1.2e-5) .MODEL RSLCMOD RES (TC1 = 1e-9 TC2 = 1e-8) .MODEL RSOURCEMOD RES (TC1 = 8.2e-2 TC2 = 1e-6) .MODEL RVTHRESMOD RES (TC1 = -13e-4 TC2 = -2.5e-6) .MODEL RVTEMPMOD RES (TC1 = -1.0e-3 TC2 = 1e-6) .MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -5 VOFF= -1.5) .MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.5 VOFF= -5) .MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.4 VOFF= 0.4) .MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.4 VOFF= -0.4) ENDS Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
FDW2512NZ Rev. A
8
+
11 + 17 18 DBODY
-
RDRAIN 16 21
MWEAK
MMED
RBREAK 18 RVTEMP 19
VBAT +
8 22 RVTHRES
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FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench(R) MOSFET FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench(R) MOSFET
SABER Electrical Model
REV July 2004 template FDW2512NZ n2,n1,n3 electrical n2,n1,n3 { var i iscl dp..model dbodymod = (isl = 7.3e-12, nl=0.93, rs = 20.6e-3, trs1 = 1.7e-3, trs2 = 2e-6, xti=0.2, cjo = 2.0e-10, ikf=0.2, tt = 1.05e-8, m = 0.58, tikf=0.001) dp..model dbreakmod = (rs = 1e-1, trs1 = 9e-3, trs2 = -2.0e-5) dp..model dplcapmod = (cjo = 0.37e-9, isl=10e-30, nl=10, m=0.51) dp..model desd1mod = (bv=14, rs=1) dp..model desd2mod = (bv=14, nl=1.3, rs=1) m..model mmedmod = (type=_n, vto = 0.96, kp=1.98, is=1e-30, tox=1) m..model mstrongmod = (type=_n, vto = 1.2, kp = 72, is = 1e-30, tox = 1) m..model mweakmod = (type=_n, vto = 0.72, kp = 0.02, is = 1e-30, tox = 1, rs=0.1) sw_vcsp..model s1amod = (ron = 1e-5, roff = 0.1, von = -5, voff = -1.5) LDRAIN DPLCAP 5 sw_vcsp..model s1bmod = (ron = 1e-5, roff = 0.1, von = -1.5, voff = -5 ) DRAIN 2 sw_vcsp..model s2amod = (ron = 1e-5, roff = 0.1, von = -0.4, voff = 0.4) 10 RLDRAIN sw_vcsp..model s2bmod = (ron = 1e-5, roff = 0.1, von = 0.4, voff = -0.4) c.ca n12 n8 = 8.8e-10 c.cb n15 n14 = 8.8e-10 c.cin n6 n8 = 0.5e-9
RSLC1 51 RSLC2 ISCL 50 6 8 + GATE 1 EVTEMP RGATE + 18 22 9 20 RLGATE DESD1 91 DESD2 LGATE 6 MSTRO CIN 8 RSOURCE RLSOURCE S1A 12 13 8 S1B CA 13 + EGS 6 8 EDS S2A 14 13 S2B CB + 5 8 14 IT 15 17 RBREAK 18 RVTEMP 19 RDRAIN EVTHRES + 19 8 21 16 MWEAK MMED EBREAK + 17 18 DBREAK 11 DBODY
dp.dbody n7 n5 = model=dbodymod dp.dbreak n5 n11 = model=dbreakmod dp.dplcap n10 n5 = model=dplcapmod dp.desd1 n91 n9 = model=desd1mod dp.desd2 n91 n7 = model=desd2mod spe.ebreak n11 n7 n17 n18 = 22.2 spe.eds n14 n8 n5 n8 = 1 spe.egs n13 n8 n6 n8 = 1 spe.esg n6 n10 n6 n8 = 1 spe.evtemp n20 n6 n18 n22 = 1 spe.evthres n6 n21 n19 n8 = 1 i.it n8 n17 = 1 l.ldrain n2 n5 = 1e-9 l.lgate n1 n9 = 1.49e-9 l.lsource n3 n7 = 0.2e-9 res.rldrain n2 n5 = 10 res.rlgate n1 n9 = 14.9 res.rlsource n3 n7 = 2.0
ESG
-
LSOURCE 7
SOURCE 3
VBAT +
-
-
8 RVTHRES
22
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u res.rbreak n17 n18 = 1, tc1 = 6e-4, tc2 = -5e-7 res.rdrain n50 n16 = 13.1e-3, tc1 = 6e-4, tc2 = 1.2e-5 res.rgate n9 n20 = 5.57 res.rslc1 n5 n51= 1e-6, tc1 = 1e-9, tc2 =1e-8 res.rslc2 n5 n50 = 1e3 res.rsource n8 n7 = 2e-4, tc1 = 8.2e-2, tc2 =1e-6 res.rvtemp n18 n19 = 1, tc1 = -1.0e-3, tc2 = 1e-6 res.rvthres n22 n8 = 1, tc1 = -13e-4, tc2 = -2.5e-6 sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod v.vbat n22 n19 = dc=1 equations { i (n51->n50) +=iscl iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/120))** 2.5)) } }
FDW2512NZ Rev. A
9
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FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench(R) MOSFET FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench(R) MOSFET
SPICE Thermal Model
REV July 2004 FDW2512NZ_JA Junction Ambient Minimum copper pad area CTHERM1 Junction c2 5.7e-4 CTHERM2 c2 c3 5.72e-4 CTHERM3 c3 c4 5.8e-4 CTHERM4 c4 c5 4.7e-3 CTHERM5 c5 c6 5.1e-3 CTHERM6 c6 c7 0.02 CTHERM7 c7 c8 0.2 CTHERM8 c8 Ambient 6 RTHERM1 Junction c2 0.003 RTHERM2 c2 c3 0.25 RTHERM3 c3 c4 1.0 RTHERM4 c4 c5 1.1 RTHERM5 c5 c6 7.5 RTHERM6 c6 c7 33.6 RTHERM7 c7 c8 33.7 RTHERM8 c8 Ambient 33.8
th JUNCTION
RTHERM1 2
CTHERM1
RTHERM2 3
CTHERM2
RTHERM3 4
CTHERM3
RTHERM4 5
CTHERM4
SABER Thermal Model
SABER thermal model FDW2512NZ Minimum copper pad area template thermal_model th tl thermal_c th, tl { ctherm.ctherm1 th c2 = 5.7e-4 ctherm.ctherm2 c2 c3 = 5.72e-4 ctherm.ctherm3 c3 c4 = 5.8e-4 ctherm.ctherm4 c4 c5 = 4.7e-3 ctherm.ctherm5 c5 c6 = 5.1e-3 ctherm.ctherm6 c6 c7 = 0.02 ctherm.ctherm7 c7 c8 = 0.2 ctherm.ctherm8 c8 tl = 6 rtherm.rtherm1 th c2 = 0.003 rtherm.rtherm2 c2 c3 = 0.25 rtherm.rtherm3 c3 c4 = 1.0 rtherm.rtherm4 c4 c5 = 1.1 rtherm.rtherm5 c5 c6 = 7.5 rtherm.rtherm6 c6 c7 = 33.6 rtherm.rtherm7 c7 c8 = 33.7 rtherm.rtherm8 c8 tl = 33.8 }
RTHERM5
CTHERM5 6
RTHERM6 7
CTHERM6
RTHERM7 8
CTHERM7
RTHERM8
CTHERM8
tl
AMBIENT
FDW2512NZ Rev. A
10
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TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench(R) MOSFET
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FACT Quiet SeriesTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM
Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM
ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM
POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM
StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
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Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
FDW2512NZ Rev. A 11

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