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| SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. DPAK FOR SVRFACE MOUNT APPLICATIONS. A KTA1040D/L EPITAXIAL PLANAR PNP TRANSISTOR I J FEATURES Low Collector Saturation Voltage : VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. Straight Lead (IPAK, "L" Suffix) H F 1 C P F 2 3 L MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range Ta=25 Tc=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING -60 -60 -7 -3 -0.5 1.0 20 150 -55 150 UNIT V V V A A W Q 1. BASE 2. COLLECTOR 3. EMITTER DPAK A C I J D O Complementary to KTC2020D/L. DIM A B C D E F H I J K L M O P Q MILLIMETERS _ 6.60 + 0.2 _ 6.10 + 0.2 _ 5.0 + 0.2 _ 0.2 1.10 + _ 2.70 + 0.2 _ 2.30 + 0.1 1.00 MAX _ 2.30 + 0.2 _ 0.5 + 0.1 _ 2.00 + 0.20 _ 0.50 + 0.10 _ 0.91+ 0.10 _ 0.90 + 0.1 _ 1.00 + 0.10 0.95 MAX B K E M Q D H G P F F L 1 2 3 DIM A B C D E F G H I J K L P Q MILLIMETERS _ 6.60 + 0.2 _ 6.10 + 0.2 _ 5.0 + 0.2 _ 1.10 + 0.2 _ 9.50 + 0.6 _ 2.30 + 0.1 _ 0.76 + 0.1 1.0 MAX _ 2.30 + 0.2 _ 0.5 + 0.1 _ 2.0 + 0.2 _ 0.50 + 0.1 _ 1.0 + 0.1 0.90 MAX K 1. BASE 2. COLLECTOR 3. EMITTER E B ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Turn-on Time Switching Time Storage Time Fall Time Note : hFE(1) Classification 2003. 3. 27 Y:100~200, ) TEST CONDITION VCB=-60V, IE=0 VEB=-7V, IC=0 IC=-50mA, IB=0 VCE=-5V, IC=-0.5A VCE=-5V, IC=-3A IC=-2A, IB=-0.2A VCE=-5V, IC=-0.5A VCE=-5V, IC=-0.5A VCB=-10V, IE=0, f=1MHz OUTPUT 0 I B2 INPUT I B1 I B2 15 IPAK SYMBOL ICBO IEBO V(BR)CEO hFE(1)(Note) hFE(2) VCE(sat) VBE fT Cob ton tstg tf GR:150~300. IB1 MIN. -60 100 20 - TYP. -0.25 -0.7 30 45 0.4 1.7 0.5 MAX. -100 -100 300 -1.0 -1.0 - UNIT A A V V V MHz pF S 20sec -IB1 =IB2=0.2A DUTY CYCLE < 1% = VCC =-30V Revision No : 5 1/2 KTA1040D/L I C - V CE COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (V) -4 COLLECTOR CURRENT I C (A) -80 -60 COMMON EMITTER Tc=25 C -50 -40 -30 -20 IB =-10mA VCE(sat) - I C -1 -0.5 -0.3 00 =1 Tc C Tc=25 C Tc=-25 C COMMON EMITTER IC /I B =10 -3 -70 -2 -0.1 -0.05 -0.02 -0.02 -1 0 0 -1 -2 -3 -4 -5 -6 -0.1 -0.3 -1 -3 -5 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (A) SAFE OPERATING AREA h FE - I C 1k DC CURRENT GAIN h FE 500 300 COLLECTOR CURRENT I C (A) COMMON EMITTER VCE =-5V Tc=100 C Tc=25 C Tc=-25 C -10 -5 -3 I C MAX. (PULSED) * I C MAX. (CONTINUOUS) 1mS 10 0m 10 * * mS S* DC -1 -0.5 -0.3 O Tc PE =2 RA 5 TI C ON 100 50 20 -0.02 -0.1 -0.3 -1 -3 CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE -0.1 COLLECTOR CURRENT I C (A) -1 -3 -5 -10 -30 -50 COLLECTOR-EMITTER VOLTAGE VCE (V) R th(t) - t TRANSIENT THERMAL RESISTANCE R th(t) ( C/W) (1) WITHOUT HEAT SINK (2) INFINITE HEAT SINK Pc - Ta COLLECTOR POWER DISSIPATION PC (W) 32 28 24 20 16 12 8 4 0 0 25 Ta=25 C Tc =2 5 1k 100 (1) Ta=25 C (2) Tc=25 C 10 C 1 0.1 10 -3 10 -2 10 -1 1 10 10 2 50 75 100 125 150 175 200 TIME t (sec) AMBIENT TEMPERATURE Ta ( C) 2003. 3. 27 Revision No : 5 VCEO MAX. * SINGLE NONREPETITIVE PULSE Tc=25 C -100 2/2 |
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