 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| PRELIMINARY PRELIMINARY PRELIMINARY MPS2907A SMALL SIGNAL TRANSISTORS (PNP) TO-92 0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) 0.142 (3.6) FEATURES PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. On special request, this transistor is also manufactured in the pin configuration TO-18. This transistor is also available in the SOT-23 case with the type designation MMBT2907A. max. 0.022 (0.55) 0.098 (2.5) E C MECHANICAL DATA Case: TO-92 Plastic Package Weight: approx. 0.18g B Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25C ambient temperature unless otherwise specified SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation at TA = 25C Derate above 25C Power Dissipation at TC = 25C Derate above 25C Thermal Resistance Junction to Ambient Air Thermal Resistance Junction Case Junction Temperature Storage Temperature Range -VCBO -VCEO -VEBO -IC Ptot Ptot RJA RJC Tj TS 60 60 5.0 600 625 5.0 1.5 12 200 83.3 150 -500 to +150 Volts Volts Volts mA mW mW/C mW mW/C C/W C/W C C NOTES: (1) Valid provided that leads are kept at ambient temperature. 12/16/98 MPS2907A ELECTRICAL CHARACTERISTICS Ratings at 25C ambient temperature unless otherwise specified SYMBOL MIN. MAX. UNIT Collector-Base Breakdown Voltage at -IC = 10 A, IE = 0 Collector-Emitter Breakdown Voltage at -IC = 10 mA, IB = 0 Emitter-Base Breakdown Voltage at -IE = 10 A, IC = 0 Collector-Emitter Saturation Voltage at -IC = 150 mA, -IB = 15 mA at -IC = 500 mA, -IB = 50 mA Base-Emitter Saturation Voltage at -IC = 150 mA, -IB = 15 mA at -IC = 500 mA, -IB = 50 mA Collector Cutoff Current at -VEB = 0.5 V, -VCE = 30 V Collector Cutoff Current at -VCB = 50 V, IE = 0 at -VCB = 50 V, IE = 0, TA=150C Base Cutoff Current at -VEB = 0.5 V, -VCE = 30 V DC Current Gain at -VCE = 10 V, -IC = 0.1 mA at -VCE = 10 V, -IC = 1 mA at -VCE = 10 V, -IC = 10 mA at -VCE = 10 V, -IC = 150 mA at -VCE = 10 V, -IC = 500 mA Gain-Bandwidth Product at -VCE = 20 V, -IC = 50 mA, f = 100 MHz Output Capacitance at -VCB = 10 V, f = 1 MHz, IE = 0 Emitter-Base Capacitance at -VEB = 2.0 V, f = 1 MHz, IE = 0 -V(BR)CBO -V(BR)CEO -V(BR)EBO 60 60 5 - - - Volts Volts Volts -VCEsat -VCEsat -VBEsat -VBEsat -ICEX -ICBO - - - - - 0.4 1.6 1.3 2.6 50 Volts Volts Volts Volts nA A - -IBL - 0.01 10 50 nA hFE hFE hFE hFE hFE fT 75 100 100 100 50 200 - - - 300 - - - - - - - MHz Cobo Cibo - - 8.0 30 pF pF MPS2907A ELECTRICAL CHARACTERISTICS Ratings at 25C ambient temperature unless otherwise specified SYMBOL MIN. MAX. UNIT Turn-On Time at -IB1 = 15 mA, -IC = 150 mA, -VCC = 30 V Delay Time (See Fig. 1) at -IB1 = 15 mA, -IC = 150 mA, -VCC = 30 V Rise Time (See Fig. 1) at -IB1 = 15 mA, -IC = 150 mA, -VCC = 30 V Turn-Off Time at -IB1 = -IB2 = 15 mA, -IC = 150 mA, -VCC = 6 V Storage Time (See Fig. 2) at IB1 = -IB2 = 15 mA, -IC = 150 mA, -VCC = 6 V Fall Time (See Fig. 2) at IB1 = -IB2 = 15 mA, -IC = 150 mA, -VCC = 6 V ton - 45 ns td - 35 ns tr - 35 ns toff - 100 ns ts - 225 ns tf - 75 ns SWITCHING TIME EQUIVALENT TEST CIRCUIT FIGURE 1 - DELAY AND RISE TIME TEST CIRCUIT -30V INPUT Zo = 50 PRF = 150 PPS Rise Time 2.0 ns P.W. < 200 ns 0 -16 V 50 200ns 200ns 200 INPUT Zo = 50 PRF = 150 PPS Rise Time 2.0 ns P.W. < 200 ns 0 -30 V 50 FIGURE 2 - STORAGE AND FALL TIME TEST CIRCUIT +15 V 1.0 k 1.0 k To Oscilloscope Rise Time 5.0 ns -6.0 V 37 1.0 k To Oscilloscope Rise Time 5.0 ns |
Price & Availability of MPS2907A
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |