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| SIE800DF New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY ID (A)a VDS (V) 30 Package Drawing FEATURES Silicon Limit 90 73 rDS(on) (W) 0.0072 @ VGS = 10 V 0.0115 @ VGS = 4.5 V Package Limit 50 50 Qg (Typ) 12 nC PolarPAK 10 D 9 G 8 S 7 S 6 D 6 7 8 9 10 D Extremely Low Qgd WFET Technology for Low Switching Losses D TrenchFETr Power MOSFET RoHS COMPLIANT D Ultra Low Thermal Resistance Using Top-Exposed PolarPAKr Package for Double-Sided Cooling D Leadframe-Based New Encapsulated Package - Die Not Exposed - Same Layout Regardless of Die Size D Low Qgd/Qgs Ratio Helps Prevent Shoot-Through D 100% Rg and UIS Tested APPLICATIONS D VRM D DC/DC Conversion: High-Side D Synchronous Rectification D D D S G D D 1 G 2 S 3 S 4 D 5 5 4 3 2 1 G Top View Top surface is connected to pins 1, 5, 6, and 10 Bottom View S N-Channel MOSFET For Related Documents Ordering Information: SIE800DF-T1--E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25_C Continuous Drain Current (TJ = 150_C) TC = 70_C TA = 25_C TA = 70_C Pulsed Drain Current Continuous Source-Drain Diode Current Source Drain Single Pulse Avalanche Current Avalanche Energy L = 0 1 mH 0.1 TC = 25_C Maximum Power Dissipation TC = 70_C TA = 25_C TA = 70_C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg PD TC = 25_C TA = 25_C IDM IS IAS EAS ID Symbol VDS VGS Limit 30 "20 90 (Silicon Limit) 50a (Package Limit) 50a 20.6b, c 16.5b, c 60 50a 4.3b, c 40 80 104 66 5.2b, c 3.3b, c -50 to 150 260 Unit V A mJ W _C Notes: a. Package limit is 50 A. b. Surface Mounted on 1" x 1" FR4 Board. c. t = 10 sec d. See Solder Profile (http://www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 73199 S-52261--Rev. C, 24-Oct-05 www.vishay.com 1 SIE800DF Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta,b Maximum Junction-to-Case (Drain Top)a Maximum Junction-to-Case (Source)a, c Notes: a. Surface mounted on 1" x 1" FR4 board. b. Maximum under steady state conditions is 68 _C/W. c. Measured at source pin (on the side of the package) Steady State t p 10 sec New Product Symbol RthJA RthJC (Drain) RthJC (Source) Typical 20 1 2.8 Maximum 24 1.2 3.4 Unit _C/W SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea VDS DVDS/TJ DVGS(th)/TJ VGS(th) IGSS IDSS ID(on) rDS(on) gfs VGS = 0 V, ID = 250 mA ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 11 A VGS = 4.5 V, ID = 9 A VDS = 15 V, ID = 11 A 25 0.006 0.0095 50 0.0072 0.0115 S 1.5 30 34.5 -6.7 2.2 3.0 "100 1 10 mV/_C V nA mA A W V Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Ciss Coss Crss VDS = 15 V, VGS = 10 V, ID = 18.5 A Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDD = 15 V, RL = 1.5 W ID ^ 10 A, VGEN = 10 V, Rg = 1 W VDD = 15 V, RL = 1.5 W ID ^ 10 A, VGEN = 4.5 V, Rg = 1 W f = 1 MHz VDS = 15 V, VGS = 4.5 V, ID= 18.5 A VDS = 15 V, VGS = 0 V, f = 1 MHz 1600 750 120 23 12 5.6 3 1.3 20 15 15 8 15 15 25 10 1.95 30 25 25 15 25 25 40 15 ns W 35 18 nC pF www.vishay.com 2 Document Number: 73199 S-52261--Rev. C, 24-Oct-05 SIE800DF New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Vishay Siliconix Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb IF = 10 A, di/dt = 100 A/ms, TJ = 25 C 25_C IS = 10 A 0.8 45 41 21 24 ns TC = 25_C 50 60 1.2 70 65 A V ns nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 73199 S-52261--Rev. C, 24-Oct-05 www.vishay.com 3 SIE800DF Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 60 VGS = 10 thru 5 V 50 I D - Drain Current (A) 4V 40 I D - Drain Current (A) 20 25 Transfer Characteristics 15 30 10 TC = 125_C 5 25_C 20 10 3V 0 0.0 0.4 0.8 1.2 1.6 2.0 -55_C 0 1.5 2.0 2.5 3.0 3.5 4.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 0.014 2500 Capacitance rDS(on) - On-Resistance (mW) 0.012 C - Capacitance (pF) VGS = 4.5 V 0.010 2000 Coss 1500 0.008 VGS = 10 V 0.006 1000 Ciss 500 Crss 0.004 0 10 20 30 40 50 60 0 0 5 10 15 20 25 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) ID =18.5 A 8 VDS = 15 V 6 VDS = 24 V 4 rDS(on) - On-Resistance (Normalized) 1.8 On-Resistance vs. Junction Temperature ID =10.8 A 1.6 1.4 VGS = 10 V 1.2 VGS = 4.5 V 1.0 2 0.8 0 0 5 10 15 20 25 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 73199 S-52261--Rev. C, 24-Oct-05 www.vishay.com 4 SIE800DF New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 60 rDS(on) - Drain-to-Source On-Resistance (W) 0.020 ID = 10.8 A 0.016 Vishay Siliconix On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) 10 TJ = 150_C 0.012 TA = 125_C 0.008 TA = 25_C 0.004 0 2 4 6 8 10 TJ = 25_C 1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 3.0 50 Single Pulse Power, Junction-to-Ambient 2.6 40 ID = 250 mA Power (W) 30 VGS(th) (V) 2.2 1.8 20 1.4 10 1.0 -50 -25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (sec) 10 100 1000 TJ - Temperature (_C) Safe Operating Area, Junction-to-Ambient 100 *Limited by rDS(on) 1 ms 10 I D - Drain Current (A) 10 ms 100 ms 1 1s 10 s 0.1 TA = 25_C Single Pulse dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified Document Number: 73199 S-52261--Rev. C, 24-Oct-05 www.vishay.com 5 SIE800DF Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Current De-Rating* 100 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 Package Limited Power Dissipation (W) ID - Drain Current (A) 100 120 Power De-Rating, Junction-to-Case 80 60 40 20 TC - Case Temperature (_C) TC - Case Temperature (_C) *The power dissipation PD is based on TJ(max) = 150_C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 73199 S-52261--Rev. C, 24-Oct-05 SIE800DF New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2 1 Duty Cycle = 0.5 Vishay Siliconix Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 55_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top) Normalized Effective Transient Thermal Impedance 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 Normalized Thermal Transient Impedance, Junction-to-Source Normalized Effective Transient Thermal Impedance 0.02 0.01 10-4 Single Pulse 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73199. Document Number: 73199 S-52261--Rev. C, 24-Oct-05 www.vishay.com 7 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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