 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| STGW30NC60W N-CHANNEL 30A - 600V - TO-247 Ultra FAST Switching PowerMESHTM IGBT Target Specification General features Type STGW30NC60W Package VCE(sat) (Max)@ 25C < 2.5 V IC @100C 30 A VCES 600 V VERY LOW OFF LOSSES INCLUDING TAIL CURRENT 1 3 2 LOWER CRES / CIES RATIO LOSSES INCLUDE DIODE RECOVERY ENERGY HIGH FREQUENCY OPERATION VERY SOFT ULTRA FAST RECOVERY ANTI PARALLEL DIODE TO-247 Internal schematic diagram Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances. The suffix "W" identifies a family optimized for very high frequency application. Applications HIGH FREQUENCY INVERTERS, UPS, MOTOR DRIVERS HF, SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES Order codes Sales Type STGW30NC60W Marking W30NC60W Package TO-247 Packaging TUBE September 2005 This is a preliminary information on a new product foreseen to be developed. Details are subject to change without notice Rev 1 1/9 www.st.com 9 1 Electrical ratings STGW30NC60W 1 Table 1. Electrical ratings Absolute maximum ratings Parameter Collector-Emitter Voltage (VGS = 0) Collector Current (continuous) at 25C (#) Collector Current (continuous) at 100C (#) Reverse Battery Protection Gate-Emitter Voltage Collector Current (pulsed) Total Dissipation at TC = 25C Derating Factor Tstg Tj Storage Temperature - 55 to 150 Operating Junction Temperature C Value 600 60 30 20 20 100 200 1.6 Unit V A A V V A W W/C Symbol VCES IC IC VECR VGE ICM Note 1 PTOT Table 2. Thermal Data Min. Typ. Max. 0.625 62.5 300 Unit C/W C/W C Rthj-case Rthj-amb TL Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature for Soldering Purpose (1.6 mm from case, for 10 sec.) 2/9 STGW30NC60W 2 Electrical characteristics 2 Electrical characteristics (TCASE = 25 C unless otherwise specified) Table 3. Symbol VBR(CES) Static Parameter Collectro-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Gate Threshold Voltage Collector-Emitter Leakage Current (VCE = 0) Gate-Emitter Leakage Current (VCE = 0) Forward Transconductance Test Conditions IC = 1 mA, VGE = 0 VGE= 15 V, IC= 20A, Tj= 25C VGE= 15 V, IC= 20A, Tj= 125C VCE= VGE, IC= 250 A VGE = Max Rating,Tc=25C VGE = Max Rating, Tc=125C VGE = 20 V , VCE = 0 VCE = 15 V, IC= 20 A 15 Min. 600 Typ. Max. Unit V VCE(SAT) VGE(th) ICES 1.9 1.8 3.75 2.5 V V V A mA nA S 5.75 10 1 100 IGES gfs Note 1 Table 4. Symbol C ies C oes Cres Qg Qge Qgc ICL Dynamic Parameter Test Conditions Min. Typ. 2200 225 50 100 16 45 100 140 Max. Unit pF pF pF Input Capacitance VCE = 25V, f = 1 MHz, VGE = Output Capacitance 0 Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-Off SOA Minimum Current VCE = 390 V, IC = 20 A, VGE = 15V, (see Figure 2) Vclamp = 480 V , Tj = 150C RG = 10 , VGE= 15V nC nC nC A 3/9 2 Electrical characteristics STGW30NC60W Table 5. Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) td(off) tf tr(Voff) td(off) tf Switching On/Off Parameter Turn-on Delay Time Current Rise Time Turn-on Current Slope Turn-on Delay Time Current Rise Time Turn-on Current Slope Off Voltage Rise Time Turn-off Delay Time Current Fall Time Off Voltage Rise Time Turn-off Delay Time Current Fall Time Test Conditions VCC = 390 V, IC = 20 A RG= 10 , VGE= 15V, Tj= 25C (see Figure 3) VCC = 390 V, IC = 20 A RG= 10 , VGE= 15V, Tj= 125C (see Figure 3) Vcc = 390 V, IC = 5 A, RGE = 10 , V GE = 15 V,TJ=25C (see Figure 3) Vcc = 390 V, IC = 5 A, RGE=10 , VGE =15 V, Tj=125 C (see Figure 3) Min. Typ. 31 11 1600 31 11.5 1500 16.5 115 38 34 152 48 Max. Unit ns ns A/s ns ns A/s ns ns ns ns ns ns Table 6. Symbol Eon Note 3 Eoff Note 4 Ets Eon Note 3 Eoff Note 4 Ets Switching energy Parameter Turn-on Switching Losses Turn-off Switching Losses Total Switching Losses Turn-on Switching Losses Turn-off Switching Losses Total Switching Losses Test Conditions VCC = 390 V, IC = 75 A RG= 10 , VGE= 15V, Tj= 25C (see Figure 3) VCC = 390 V, IC = 5 A RG= 10 , VGE= 15V, Tj= 125C (see Figure 3) Min. Typ. 200 205 405 400 365 765 Max. Unit J J J J J J (1)Pulse width limited by max. junction temperature (2) Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25C and 125C) (3) Turn-off losses include also the tail of the collector current 4/9 STGW30NC60W 3 Test Circuits 3 Test Circuits Test Circuit for Inductive Load Switching Figure 2. Gate Charge Test Circuit Figure 1. Figure 3. Switching Waveform 5/9 4 Package mechanical data STGW30NC60W 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 6/9 STGW30NC60W 4 Package mechanical data TO-247 MECHANICAL DATA mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620 DIM. A A1 b b1 b2 c D E e L L1 L2 oP oR S 7/9 5 Revision History STGW30NC60W 5 Revision History Date 15-Sep-2005 Revision 1 Initial release. Changes 8/9 STGW30NC60W 5 Revision History Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 9/9 |
Price & Availability of STGW30NC60W
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |