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| EMZ1 / UMZ1N / IMZ1A Transistors General purpose transistor (dual transistors) EMZ1 / UMZ1N / IMZ1A Features 1) Both a 2SA1037AK chip and 2SC2412K chip in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. External dimensions (Unit : mm) EMZ1 0.22 (4) (5) (6) (3) (2) 1.2 1.6 (1) 0.13 Each lead has same dimensions ROHM : EMT6 Abbreviated symbol : Z1 Structure NPN / PNP epitaxial planar silicon transistor (4) 0.65 1.3 0.65 0.8 1.1 0.95 0.95 1.9 2.9 (3) UMZ1N 0.2 0.5 0.5 0.5 1.0 1.6 (6) 1.25 2.1 0.1Min. 0to0.1 EMZ1 / UMZ1N (3) (2) (1) IMZ1A (4) (5) (6) Each lead has same dimensions ROHM : UMT6 EIAJ : SC-88 Abbreviated symbol : Z1 Tr1 Tr2 Tr1 Tr2 IMZ1A (4) (5) (6) (3) (2) (1) (6) 0.3 (4) (5) 1.6 2.8 0.15 Absolute maximum ratings (Ta = 25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current EMZ1, UMZ1N Power dissipation IMZ1A Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits Tr1 60 50 7 150 Tr2 -60 -50 -6 -150 Unit V V V mA mW C C 1 2 0.3to0.6 0to0.1 Each lead has same dimensions ROHM : SMT6 EIAJ : SC-74 Abbreviated symbol : Z1 150 (TOTAL) 300 (TOTAL) 150 -55 to +150 1 120mW per element must not be exceeded. 2 200mW per element must not be exceeded. (3) (2) (1) 0.7 0.9 Equivalent circuit 0.15 (1) 2.0 (5) (2) Rev.A 1/4 EMZ1 / UMZ1N / IMZ1A Transistors Electrical characteristics (Ta = 25C) Tr1 (NPN) Parameter Symbol Min. Typ. Max. Unit BVCBO BVCEO BVEBO ICBO IEBO VCE (sat) hFE 60 50 7 - - - 120 - - - - - - - - - - 0.1 0.1 0.4 560 V V V A A V - IC=50A IC=1mA IE=50A VCB=60V VEB=7V IC/IB=50mA/5mA VCE=6V, IC=1mA Conditions Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance fT Cob - - 180 2 - 3.5 MHz VCE=12V, IE=-2mA, f=100MHz PF VCB=12V, IE=0A, f=1MHz Tr2 (PNP) Parameter Symbol Min. Typ. Max. Unit BVCBO BVCEO BVEBO ICBO IEBO VCE (sat) hFE -60 -50 -6 - - - 120 - - - - - - - - - - -0.1 -0.1 -0.5 560 V V V A A V - IC=-50A IC=-1mA IE=-50A VCB=-60V VEB=-6V IC/IB=-50mA/-5mA VCE=-6V, IC=-1mA Conditions Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance fT Cob - - 140 4 - 5 MHz VCE=-12V, IE=2mA, f=100MHz PF VCB=-12V, IE=0A, f=1MHz Packaging specifications Package Code T2R 8000 Taping TR 3000 T108 3000 Type EMZ1 UMZ1N IMZ1A Basic ordering unit (pieces) Electrical characteristic curves Tr1 (NPN) 50 VCE=6V 100 Ta=25C COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) 20 10 5 80 0.50mA mA 0.45 A 0.40m 0.35mA 0.30mA 0.25mA 10 Ta=25C 30A 27A 8 24A 21A Ta=100C 25C -55C 60 0.20mA 0.15mA 6 18A 15A 2 1 0.5 0.2 0.1 0 0.2 40 0.10mA 4 12A 9A 20 0.05mA 2 6A 3A IB=0A 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 0 0.4 0.8 1.2 1.6 2.0 0 0 IB=0A 4 8 12 16 20 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics ( I ) Fig.3 Grounded emitter output characteristics ( II ) Rev.A 2/4 EMZ1 / UMZ1N / IMZ1A Transistors COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 500 500 Ta=25C DC CURRENT GAIN : hFE Ta=100C VCE=5V 3V 1V 200 VCE=5V 0.5 Ta=25C DC CURRENT GAIN : hFE 200 25C -55C 0.2 100 100 0.1 0.05 IC/IB=50 20 10 50 50 0.02 20 20 10 0.2 0.5 1 2 5 10 20 50 100 200 10 0.2 0.5 1 2 5 10 20 50 100 200 0.01 0.2 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( I ) Fig.5 DC current gain vs. collector current ( II ) Fig.6 Collector-emitter saturation voltage vs. collector current ( I ) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 0.5 IC/IB=10 0.5 IC/IB=50 TRANSITION FREQUENCY : fT (MHz) 500 Ta=25C VCE=6V 0.2 0.2 0.1 0.05 0.1 0.05 Ta=100C 25C -55C Ta=100C 25C -55C 200 0.02 100 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 0.01 0.2 0.5 1 2 5 10 20 50 100 200 50 -0.5 -1 -2 -5 -10 -20 -50 -100 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) Fig.7 Collector-emitter saturation voltage vs. collector current ( II ) Fig.8 Collector-emitter saturation voltage vs. collector current ( III ) Fig.9 Gain bandwidth product vs. emitter current COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) BASE COLLECTOR TIME CONSTANT : Cc rbb' (ps) 20 10 Cib Ta=25C f=1MHz IE=0A IC=0A 200 Ta=25C f=32MHZ VCB=6V 100 5 50 2 Co b 20 1 0.2 0.5 1 2 5 10 20 50 10 -0.2 -0.5 -1 -2 -5 -10 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) EMITTER CURRENT : IE (mA) Fig.10 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Fig.11 Base-collector time constant vs. emitter current Rev.A 3/4 EMZ1 / UMZ1N / IMZ1A Transistors Tr2 (PNP) -50 COLLECTOR CURRENT : Ic (mA) COLLECTOR CURRENT : IC (mA) -10 -5 -2 -1 -0.5 -0.2 -0.1 -40C -8 -28.0 -24.5 COLLECTOR CURRENT : IC (mA) -20 Ta=100C 25C VCE=-6V -10 -35.0 Ta=25C -31.5 -100 Ta=25C -500 -450 -400 -350 -300 -80 -6 -21.0 -17.5 -60 -250 -200 -4 -14.0 -10.5 -40 -150 -100 -2 -7.0 -3.5A IB=0 -20 -50A IB=0 0 -1 -2 -3 -4 -5 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 0 -0.4 -0.8 -1.2 -1.6 -2.0 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.12 Grounded emitter propagation characteristics Fig.13 Grounded emitter output characteristics ( I ) Fig.14 Grounded emitter output characteristics ( II ) Ta=25C DC CURRENT GAIN : hFE VCE=-5V -3V -1V COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 500 500 -1 Ta=100C 25C 200 Ta=25C DC CURRENT GAIN : hFE -0.5 200 -40C -0.2 100 100 IC/IB=50 -0.1 20 10 50 50 -0.05 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 VCE=-6V -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.15 DC current gain vs. collector current ( I ) Fig.16 DC current gain vs. collector current ( II ) Fig.17 Collector-emitter saturation voltage vs. collector current ( I ) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) -1 lC/lB=10 1000 20 -0.5 TRANSITION FREQUENCY : fT (MHz) Ta=25C VCE=-12V Cib 10 500 Ta=25C f=1MHz IE=0A IC=0A Co b -0.2 200 5 -0.1 Ta=100C 25C -40C 100 2 -0.05 50 0.5 1 2 5 10 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 20 50 100 -0.5 -1 -2 -5 -10 -20 COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.18 Collector-emitter saturation voltage vs. collector current ( II ) Fig.19 Gain bandwidth product vs. emitter current Fig.20 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Rev.A 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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