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BC846...BC850
NPN Silicon AF Transistors
For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC856, BC857, BC858 BC859, BC860 (PNP)

3
2 1
VPS05161
Type BC846A BC846B BC847A BC847B BC847C BC848A BC848B BC848C BC849B BC849C BC850B BC850C
Marking 1As 1Bs 1Es 1Fs 1Gs 1Js 1Ks 1Ls 2Bs 2Cs 2Fs 2Gs 1=B B=1 B=1 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B
Pin Configuration 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C
Package SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23
1
Nov-20-2002
BC846...BC850
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage DC collector current Peak collector current Peak base current Peak emitter current Total power dissipation, TS = 71 C Junction temperature Storage temperature
Thermal Resistance
Symbol VCEO VCBO VCES VEBO IC ICM IBM IEM Ptot Tj Tstg
RthJS
BC846 65 80 80 6
BC847 BC850 45 50 50 6 100 200 200 200 330 150 -65 ... 150
BC848 BC849 30 30 30 5
Unit V
mA mA
mW C
Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BC846 BC847/850 BC848/849 Collector-base breakdown voltage IC = 10 A, IE = 0 BC846 BC847/850 BC848/849 V(BR)CBO 80 50 30 V(BR)CEO 65 45 30 V Symbol min. Values typ. max. Unit
1For calculation of R thJA please refer to Application Note Thermal Resistance
2
Junction - soldering point1)
240
K/W
Nov-20-2002
BC846...BC850
Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 A, VBE = 0 BC846 BC847/850 BC848/849 Emitter-base breakdown voltage IE = 1 A, IC = 0 Collector cutoff current VCB = 40 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 C DC current gain 1) IC = 10 A, VCE = 5 V hFE -group A hFE -group B hFE -group C DC current gain 1) IC = 2 mA, VCE = 5 V hFE -group A hFE -group B hFE -group C Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter saturation voltage 1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter voltage 1) IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V VBE(ON) 580 660 700 770 VBEsat 700 900 VCEsat 90 200 250 600 hFE 110 200 420 180 290 520 220 450 800 hFE 140 250 480 ICBO 5 BC846/847 BC848-850 ICBO V(BR)EBO 6 5 15 V(BR)CES 80 50 30 typ. max.
Unit
V
nA A -
mV
1) Pulse test: t =300s, D = 2%
3
Nov-20-2002
BC846...BC850
Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. AC Characteristics
Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz h11e Ceb Ccb fT
Unit max. k
typ. 250 3 8
-
MHz pF
hFE -gr.A hFE -gr.B hFE -gr.C
h12e
2.7 4.5 8.7 1.5 2 3 200 330 600 18 30 60 1.2
10-4
Open-circuit reverse voltage transf.ratio IC = 2 mA, VCE = 5 V, f = 1 kHz
hFE -gr.A hFE -gr.B hFE -gr.C
h21e
S 4 dB
Short-circuit forward current transf.ratio IC = 2 mA, VCE = 5 V, f = 1 kHz
hFE -gr.A hFE -gr.B hFE -gr.C
h22e
IC = 2 mA, VCE = 5 V, f = 1 kHz
hFE -gr.A hFE -gr.B hFE -gr.C
F
Noise figure IC = 200 A, VCE = 5 V, RS = 2 k, Equivalent noise voltage IC = 200 A, VCE = 5 V, RS = 2 k,
-
BC849 BC850
Vn
f = 10 ... 50 Hz
f = 1 kHz,
f = 200 Hz
-
-
0.135
BC850
4
Nov-20-2002
Open-circuit output admittance
V
BC846...BC850
Total power dissipation Ptot = f(TS)
Collector-base capacitance CCB = f (VCBO) Emitter-base capacitance CEB = f (VEBO)
BC 846...850 EHP00361
360
mW
300 270
C CB0 ( C EB0 )
12 pF 10
P tot
240 210 180 150 120 90 60 30 0 0 15 30 45 60 75 90 105 120
8
C EB
6
4
C CB
2
C 150 TS
0 10 -1
5
10 0
V VCB0
10 1 (VEB0 )
Permissible pulse load Ptotmax / PtotDC = f (tp )
10 3 Ptot max Ptot DC
tp D= T tp T
EHP00362
Transition frequency fT = f (IC) VCE = 5V
10 3 MHz
EHP00363
fT
5
10 2 5
10 1 5
D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 2
5
10 0 10 -6
10
-5
10
-4
10
-3
10
-2
s tp
10
0
10 1 10 -1
5 10 0
5
10 1
mA
10 2
C
5
Nov-20-2002
BC846...BC850
Collector cutoff current ICBO = f (TA) VCB = 30V
10 4
EHP00415
Collector-emitter saturation voltage IC = f (VCEsat), h FE = 20
10 2
EHP00367
CB0
nA max
C
mA 100 C 25 C -50 C
10 3 5
10 1
typ
5
10 5
2
10
10 5
1
0
5
10 0
0
50
100
C TA
150
10 -1
0
0.1
0.2
0.3
0.4
V 0.5 VCEsat
DC current gain hFE = f (IC ) VCE = 5V
10 3
EHP00365
Base-emitter saturation voltage IC = f (VBEsat), hFE = 20
10 2
EHP00364
h FE 5
100 C 25 C
C mA
100 C 25 C -50 C
10 2 5
-50 C
10 1 5
10 1 5
10 0 5
10 0 10 -2
5
10 -1
5
10 0
5
10 1
mA
10 2
10 -1
0
0.2
0.4
0.6
0.8
V
1.2
C
V BEsat
6
Nov-20-2002
BC846...BC850
h parameter he = f (IC) normalized VCE = 5V
10 2 he 5
EHP00368
h parameter he = f (VCE) normalized IC = 2mA
EHP00369
2.0
he
h 11e
1.5
C = 2 mA h 21 e
h 11 e
10 1 5 h 12e
VCE = 5 V
1.0
h 12 e h 22 e
10 0 h 21e 5 h 22e 10 -1
0 0.5
10 -1
5
10 0
mA
10 1
0
10
20
V VCE
30
C
Noise figure F = f (VCE ) IC = 0.2mA, RS = 2k, f = 1kHz
BC 846...850 EHP00370
Noise figure F = f (f) IC = 0.2mA, VCE = 5V, R S = 2k
BC 846...850 EHP00371
20
20 dB
F
dB
F
15
15
10
10
5
5
0 10 -1
5
10 0
10 1
V VCE
10 2
0 10 -2
10 -1
10 0
10 1
kHz 10 2 f
7
Nov-20-2002
BC846...BC850
Noise figure F = f (IC ) VCE = 5V, f = 120Hz
BC 846...850 EHP00372
Noise figure F = f (IC) VCE = 5V, f = 1kHz
BC 846...850 EHP00373
20 dB
20 dB
F
15 RS = 1 M 100 k 10 k
F
15 RS = 1 M 10
100 k 10 k
10 500
1 k
5 1 k
5 500
0 10 -3
10 -2
10 -1
10 0
mA 10 1
0 10 -3
10 -2
10 -1
10 0
mA 10 1
C
C
Noise figure F = f (IC ) VCE = 5V, f = 10kHz
BC 846...850 EHP00374
20 dB
F
15 R S = 1 M 100 k 10 500 10 k
5 1 k
0 10 -3
10 -2
10 -1
10 0
mA 10 1
C
8
Nov-20-2002

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