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| MITSUBISHI IGBT MODULES CM10MD-24H MEDIUM POWER SWITCHING USE INSULATED TYPE CM10MD-24H IC ..................................................................... 10A VCES ......................................................... 1200V Insulated Type CIB Module 3 Inverter+3 Converter+Brake UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC & DC motor controls, General purpose inverters, Servo controls, NC, Robotics OUTLINE DRAWING & CIRCUIT DIAGRAM P P1 GU R S T B EU GV EV GW EW Dimensions in mm D 2.54 2.54 2.54 2.54 2.54 2.54 2.54 GB GU GV GW E 7.5 8 8 12.28 7.62 7.62 7.62 GW EU EV GV EW GW GV GU GB E N 2 - 4.8 0.1 MOUNTING HOLES U V CIRCUIT DIAGRAM W P P1 N GU 9 0.1 54 64 0.5 9 0.1 LABEL 53 0.5 R S T B U V W 2 - 4.8 0.2 GUIDE HOLE 8 26.5 0.3 26.5 0.3 32 2 1 t = 0.5 (30) 0.8 t = 0.5 16.5 5 +1.0 -0.5 8 8 12.5 12.5 80 0.3 90 0.5 8 8 5.3 5 +1.0 -0.5 MAIN CIRCUIT TERMINAL CONTROL CIRCUIT TERMINAL Note. Not use the guiding holes to mount on the cooling fin. Feb.1999 MITSUBISHI IGBT MODULES CM10MD-24H MEDIUM POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS INVERTER PART Symbol VCES VGES IC ICM IE (Note. 1) IEM (Note. 1) PC (Note. 3) (Tj = 25C) Parameter Collector-emitter voltage Gate-emitter voltage Collector Current Emitter Current Maximum collector dissipation G - E Short C - E Short TC = 25C PULSE TC = 25C PULSE Tf = 25C Condition (Note. 2) (Note. 2) Rating 1200 20 10 20 10 20 57 Unit V V A A A A W BRAKE PART Symbol VCES VGES IC ICM PC (Note. 3) VRRM IFM (Note. 3) Parameter Collector-emitter voltage Gate-emitter voltage Collector Current Maximum Collector dissipation Repetitive peak reverse voltage Forward current G - E Short C - E Short TC = 25C PULSE Tf = 25C Clamp diode part Clamp diode part Condition Rating 1200 20 10 20 57 1200 10 Unit V V A A W V A (Note. 2) CONVERTER PART Symbol VRRM Ea IO IFSM I2t Parameter Repetitive peak reverse voltage Recommended AC input voltage DC output current Surge (non-repetitive) forward current I2t for fusing Condition Rating 1600 440 10 100 42 Unit V V A A A 2s 3 rectifying circuit 1 cycle at 60Hz, peak value Non-repetitive Value for one cycle of surge current COMMON RATING Symbol Tj Tstg Viso -- -- Parameter Junction temperature Storage temperature Isolation voltage Mounting torque Weight Condition Rating -40 ~ +150 -40 ~ +125 2500 1.47 ~1.96 60 Unit C C V N.m g AC 1 min. Mounting M4 screw Typical value Feb.1999 MITSUBISHI IGBT MODULES CM10MD-24H MEDIUM POWER SWITCHING USE INSULATED TYPE ELECTRICAL CHARACTERISTICS INVERTER PART Symbol ICES Parameter (Tj = 25C) Test conditions VCE = VCES, VGE = 0V IC = 1.0mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25C IC = 10A, VGE = 15V Tj = 150C VCE = 10V VGE = 0V VCC = 600V, IC = 10A, VGE = 15V VCC = 600V, IC = 10A VGE1 = VGE2 = 15V RG = 31 Resistive load IE = 10A, VGE = 0V IE = 10A, VGE = 0V die / dt = - 20A / s IGBT part, Per 1/6 module FWDi part, Per 1/6 module Collector cutoff current Gate-emitter VGE(th) threshold voltage Gate-emitter cutoff current IGES Collector-emitter VCE(sat) saturation voltage Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Total gate charge QG Turn-on delay time td (on) Turn-on rise time tr td (off) Turn-off delay time tf Turn-off fall time VEC (Note. 1) Emitter-collector voltage trr (Note. 1) Reverse recovery time Qrr (Note. 1) Reverse recovery charge Rth(j-f)Q (Note. 5) Thermal resistance Rth(j-f)R (Note. 5) Min. -- 4.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Limits Typ. -- 6 -- 2.7 2.45 -- -- -- 50 -- -- -- -- -- -- 0.08 -- -- Max. 1 7.5 0.5 3.4 -- 2.0 1.5 0.4 -- 100 200 150 350 3.5 250 -- 2.2 3.1 Unit mA V A V nF nF nF nC ns ns ns ns V ns C C/W C/W (Note. 4) BRAKE PART Symbol ICES VGE(th) IGES VCE(sat) Parameter Collector cutoff current Gate-emitter threshold voltage Gate-emitter cutoff current Collector-to-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Forward voltage drop VCE = VCES, VGE = 0V IC = 1.0mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25C IC = 10A, VGE = 15V Tj = 150C VCE = 10V VGE = 0V VCC = 600V, IC = 10A, VGE = 15V IF = 10A, Clamp diode part IGBT part Clamp diode part Condition Min. -- 4.5 -- -- -- -- -- -- -- -- -- -- Limits Typ. -- 6 -- 2.7 2.45 -- -- -- 50 -- -- -- Max. 1 7.5 0.5 3.4 -- 2.0 1.5 0.4 -- 1.7 2.2 2.7 Unit mA V A V nF nF nF nC V C/W C/W (Note. 4) Cies Coes Cres QG VFM Rth(j-f)Q (Note. 5) Thermal resistance Rth(j-f)R (Note. 5) CONVERTER PART Symbol Parameter VR = VRRM, Tj = 150C IF = 10A Per 1/6 module Condition Min. -- -- -- Limits Typ. -- -- -- Max. 8 1.7 2.7 Unit mA V C/W Repetitive reverse current IRRM Forward voltage drop VFM Rth(j-f) (Note. 5) Thermal resistance Note 1. 2. 3. 4. 5. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. Junction temperature (Tj) should not increase beyond 150C. Pulse width and repetition rate should be such as to cause negligible temperature rise. Thermal resistance is specified under following conditions. * The conductive greese applied, between module and fin. * Al plate is used as fin. Feb.1999 MITSUBISHI IGBT MODULES CM10MD-24H MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 20 COLLECTOR CURRENT IC (A) TRANSFER CHARACTERISTICS (TYPICAL) 20 VCE = 10V COLLECTOR CURRENT IC (A) VGE = 20 (V) Tj = 25C 15 12 15 15 11 10 10 5 9 87 0 0 1 2 3 4 5 6 7 8 9 10 10 5 Tj = 25C Tj = 125C 0 0 2 4 6 8 10 12 14 16 18 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 5 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 9 8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 20 IC = 4A IC = 10A IC = 20A Tj = 25C 4 VGE = 15V Tj = 25C Tj = 125C 3 2 1 0 0 4 8 12 16 20 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISITICS (TYPICAL) CAPACITANCE Cies, Coes, Cres (nF) 7 5 CAPACITANCE VS. VCE (TYPICAL) 101 7 VGE = 0V 5 3 2 Tj = 25C EMITTER CURRENT IE (A) 3 2 Cies 100 7 5 3 2 101 7 5 3 2 Coes 10-1 7 5 3 2 100 7 Cres 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 1.0 1.5 2.0 2.5 3.0 3.5 10-2 EMITTER-COLLECTOR VOLTAGE VEC (V) COLLECTOR-EMITTER VOLTAGE VCE (V) Feb.1999 MITSUBISHI IGBT MODULES CM10MD-24H MEDIUM POWER SWITCHING USE INSULATED TYPE HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) tf td(off) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 101 - di/dt = 20A / s 7 7 Tj = 25C 5 3 2 5 3 2 SWITCHING TIMES (ns) 3 2 102 7 5 3 2 REVERSE RECOVERY TIME trr (ns) 7 5 102 7 5 3 2 trr Irr 100 7 5 3 2 tr td(on) VCC = 600V VGE = 15V RG = 31 Tj = 125C 5 7 100 2 3 5 7 101 2 3 5 101 7 101 7 100 2 3 5 7 101 10-1 2 3 57 COLLECTOR CURRENT IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 Tf = 25C 2 7 5 3 2 7 5 3 2 7 5 3 2 EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 Tf = 25C 2 7 5 3 2 7 5 3 2 7 5 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j - f) 100 Rth(j - f) = 2.2C/ W 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j - f) 100 Rth(j - f) = 3.1C/ W 3 2 10-1 10-1 7 5 3 2 7 5 3 2 10-1 10-1 7 5 3 2 7 5 3 2 10-2 10-2 10-2 10-2 10-3 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 TIME (s) 10-3 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 TIME (s) VGE - GATE CHARGE (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) 18 16 14 12 10 8 6 4 2 0 0 IC = 10A VCC = 400V VCC = 600V 20 40 60 80 GATE CHARGE QG (nC) Feb.1999 REVERSE RECOVERY CURRENT lrr (A) |
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