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MICROWAVE CORPORATION
v01.0604
HMC311LP3
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6.0 GHz
Features
P1dB Output Power: +15.5 dBm Output IP3: +32 dBm Gain: 14.5 dB 50 Ohm I/O's 3 x 3 x 1 mm QFN SMT Package
8
AMPLIFIERS - SMT
Typical Applications
The HMC311LP3 is an ideal RF/IF gain block or LO buffer amplifier for: * Cellular / PCS / 3G * Fixed Wireless & WLAN * CATV & Cable Modem * Microwave Radio
Functional Diagram
General Description
The HMC311LP3 is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT DC to 6 GHz amplifier. This 3x3mm QFN packaged amplifier can be used as either a cascadable 50 Ohm gain stage or to drive the LO of HMC mixers with up to +17 dBm output power. The HMC311LP3 offers 14.5 dB of gain and an output IP3 of +30 dBm while requiring only 56 mA from a +5V supply. The Darlington feedback pair used results in reduced sensitivity to normal process variations and yields excellent gain stability over temperature while requiring a minimal number of external bias components.
Electrical Specifications, Vs= 5.0 V, Rbias= 22 Ohm, TA = +25 C
Parameter DC - 1.0 GHz 1.0 - 4.0 GHz 4.0 - 6.0 GHz DC - 2.0 GHz 2.0 - 4.0 GHz 4.0 - 6.0 GHz DC - 1.0 GHz 1.0 - 3.0 GHz 3.0 - 6.0 GHz DC - 6.0 GHz DC - 2.0 GHz 2.0 - 4.0 GHz 4.0 - 6.0 GHz DC - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 4.0 GHz 4.0 - 6.0 GHz DC - 6.0 GHz 13.5 12.0 10.0 Min. 13.0 12.5 12.0 Typ. 14.5 14.3 14.0 0.005 0.008 0.012 13 11 15 18 15.5 15.0 13.0 32 30 28 24 4.5 56 0.008 0.012 0.016 Max. Units dB dB dB dB/ C dB/ C dB/ C dB dB dB dB dBm dBm dBm dBm dBm dBm dBm dB mA
Gain
Gain Variation Over Temperature
Return Loss Input / Output
Reverse Isolation Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept (IP3)
Noise Figure Supply Current (Icq)
Note: Data taken with broadband bias tee on device output.
8 - 62
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
v01.0604
MICROWAVE CORPORATION
HMC311LP3
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6.0 GHz
Gain & Return Loss
20 15 10
Gain vs. Temperature
20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 0 1 2
8
AMPLIFIERS - SMT
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RESPONSE (dB)
5
S21
0 -5 -10 -15 -20 -25 0 1 2
S11 S22
GAIN (dB)
+25C +85C -40C
3
4
5
6
7
8
9
3
4
5
6
7
8
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
+25C +85C -40C
Output Return Loss vs. Temperature
0
OUTPUT RETURN LOSS (dB)
INPUT RETURN LOSS (dB)
+25C
-5
-5
+85C -40C
-10
-10
-15
-15
-20 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz)
-20 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0
+25C
Noise Figure vs. Temperature
10 9
+25C +85C -40C
REVERSE ISOLATION (dB)
-5
+85C -40C
8
NOISE FIGURE (dB)
8
7 6 5 4 3 2 1
-10
-15
-20
-25 0 1 2 3 4 5 6 7 FREQUENCY (GHz)
0 1 2 3 4 5 6 7 8 FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
v01.0604
MICROWAVE CORPORATION
HMC311LP3
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6.0 GHz
8
AMPLIFIERS - SMT
P1dB vs. Temperature
20 18 16 14
Psat vs. Temperature
20 18 16 14
P1dB (dBm)
12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz)
+25C +85C -40C
Psat (dBm)
12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz)
+25C +85C -40C
Power Compression @ 1 GHz
20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -20 -18 -16 -14 -12 -10 -8
Power Compression @ 6 GHz
20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -20 -18 -16 -14 -12 -10 -8
Pout (dBm), GAIN (dB), PAE (%)
Pout Gain PAE
Pout (dBm), GAIN (dB), PAE (%)
Pout Gain PAE
-6
-4
-2
0
2
4
6
8
-6
-4
-2
0
2
4
6
INPUT POWER (dBm)
INPUT POWER (dBm)
Output IP3 vs. Temperature
34 32 30 28 26
Gain, Power, OIP3 & Supply Current vs. Supply Voltage @ 1 GHz
GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
40 35 30 25 60 80
IP3 (dBm)
24 22 20 18 16 14 12 10 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz)
+25C +85C -40C
Icq (mA)
20 15 10 5 0 4.5 4.75 5 Vs(Vdc) 5.25
Icq Gain P1dB Psat OIP3
40
20
0 5.5
8 - 64
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
v01.0604
MICROWAVE CORPORATION
HMC311LP3
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6.0 GHz
Absolute Maximum Ratings
Collector Bias Voltage (Vcc) RF Input Power (RFin)(Vs = +5.0 Vdc) Junction Temperature Continuous Pdiss (T = 85 C) (derate 5.21 mW/C above 85 C) Thermal Resistance (junction to ground paddle) Storage Temperature Operating Temperature +7.0 Vdc +10 dBm 150 C 0.339 W
8
AMPLIFIERS - SMT
NOTES: 1. MATERIAL PACKAGE BODY: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY 3. LEAD AND GROUND PADDLE PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 6. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 7. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB LAND PATTERN.
192 C/W -65 to +150 C -40 to +85 C
Outline Drawing
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
8 - 65
v01.0604
MICROWAVE CORPORATION
HMC311LP3
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6.0 GHz
8
AMPLIFIERS - SMT
Pin Descriptions
Pin Number 1, 2, 4 - 9, 11 - 16 Function N/C Description This pin may be connected to RF ground. Interface Schematic
3
RFIN
This pin is DC coupled. An off chip DC blocking capacitor is required.
10
RFOUT
RF output and DC Bias for the output stage.
GND
Package bottom must be connected to RF/DC ground.
Application Circuit
Note: 1. Select Rbias to achieve Icq using equation below, Rbias > 22 Ohm. 2. External blocking capacitors are required on RFIN and RFOUT. Icq = Vs - 3.9 Rbias
Recommended Component Values
Frequency (MHz) Component 50 L1 C1, C2 270 nH 0.01 F 900 56 nH 100 pF 1900 18 nH 100 pF 2200 18 nH 100 pF 2400 15 nH 100 pF 3500 8.2 nH 100 pF 5200 3.3 nH 100 pF 5800 3.3 nH 100 pF
8 - 66
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
v01.0604
MICROWAVE CORPORATION
HMC311LP3
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6.0 GHz
Evaluation PCB
8
AMPLIFIERS - SMT
8 - 67
J3
Pin Number 1, 2, 3 4, 5, 6 Description Vs GND
List of Materials
Item J1 - J2 J3 C1, C2 C3 R1 L1 U1 PCB* Description PC Mount SMA Connector 2 mm DC Header Capacitor, 0402 Pkg. 10,000 pF Capacitor, 0805 Pkg. 22 Ohm Resistor, 0805 Pkg. Inductor, 0805 Pkg. HMC311LP3 106493 Evaluation PCB
The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request.
* Circuit Board Material: Rogers 4350
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com

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