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| SPD30N03L SIPMOS(R) Power Transistor Features * N channel * Enhancement mode Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS ID 30 30 V A RDS(on) 0.012 * Avalanche rated * Logic Level * dv/dt rated * 175C operating temperature Type SPD30N03L SPU30N03L Package P-TO252 Ordering Code Packaging Pin 1 G Pin 2 Pin 3 D S Q67040-S4148-A2 Tape and Reel P-TO251-3-1 Q67040-S4149-A2 Tube Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Continuous drain current Symbol Value 30 30 120 250 12 6 kV/s mJ Unit A ID TC = 25 C, limited by bond wire TC = 100 C Pulsed drain current IDpulse EAS EAR dv/dt TC = 25 C Avalanche energy, single pulse ID = 30 A, VDD = 25 V, RGS = 25 Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt IS = 46 A, VDS = 24 V, di/dt = 200 A/s, Tjmax = 175 C Gate source voltage Power dissipation VGS Ptot T j , Tstg 20 120 -55... +175 55/175/56 V W C TC = 25 C Operating and storage temperature IEC climatic category; DIN IEC 68-1 1 Semiconductor Group SPD30N03L Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area1) Symbol min. Values typ. max. 1.25 100 75 50 K/W Unit RthJC RthJA RthJA - Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Drain- source breakdown voltage Symbol min. Values typ. 1.6 max. 2 A 0.1 10 1 100 100 nA 0.013 0.018 0.0076 0.012 V Unit V(BR)DSS VGS(th) I DSS 30 1.2 VGS = 0 V, ID = 0.25 mA Gate threshold voltage, VGS = VDS ID = 80 A Zero gate voltage drain current VDS = 30 V, VGS = 0 V, T j = 25 C VDS = 30 V, VGS = 0 V, T j = 150 C Gate-source leakage current I GSS RDS(on) VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = 4.5 V, ID = 30 A VGS = 10 V, ID = 30 A 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air. Semiconductor Group 2 SPD30N03L Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Symbol min. Values typ. 45 1640 650 280 16 max. 2100 820 350 24 ns S pF Unit g fs Ciss Coss Crss t d(on) 20 - VDS2*ID*RDS(on)max , ID = 30 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time VDD = 15 V, V GS = 4.5 V, ID = 30 A, RG = 3.6 Rise time tr - 30 45 VDD = 15 V, V GS = 4.5 V, ID = 30 A, RG = 3.6 Turn-off delay time t d(off) - 20 30 VDD = 15 V, V GS = 4.5 V, ID = 30 A, RG = 3.6 Fall time tf - 25 38 VDD = 15 V, V GS = 4.5 V, ID = 30 A, RG = 3.6 Semiconductor Group 3 SPD30N03L Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics Gate to source charge Symbol min. Values typ. 4 21 54 3.31 max. 6 31.5 80 V nC Unit Q gs Q gd Qg V(plateau) - VDD = 24 V, ID = 30 A Gate to drain charge VDD = 24 V, ID = 30 A Gate charge total VDD = 24 V, ID = 30 A, VGS = 0 to 10 V Gate plateau voltage VDD = 24 V, ID = 30 A Reverse Diode Inverse diode continuous forward current IS I SM VSD t rr Q rr - 0.97 45 0.045 30 120 1.7 68 A TC = 25 C Inverse diode direct current,pulsed TC = 25 C Inverse diode forward voltage V ns VGS = 0 V, I F = 60 A Reverse recovery time VR = 15 V, IF=IS , diF/dt = 100 A/s Reverse recovery charge 0.068 C VR = 15 V, IF=l S , diF/dt = 100 A/s Semiconductor Group 4 SPD30N03L Power Dissipation Drain current Ptot = f (TC) SPD30N03L ID = f (TC ) parameter: VGS 10 V SPD30N03L 130 W 32 A 110 100 90 24 Ptot 70 16 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 C 190 0 0 20 40 60 80 100 120 140 160 C 190 8 12 ID TC 80 20 4 TC Safe operating area Transient thermal impedance I D = f (V DS) parameter : D = 0 , T C = 25 C 10 3 ZthJC = f (tp ) parameter : D = tp /T 10 1 SPD30N03L SPD30N03L K/W A 10 0 tp = 65.0s /I ID DS ( on ) = V DS 100 s Z thJC 10 2 D 10 -1 10 -2 D = 0.50 1 ms R 0.20 10 -3 10 1 10 ms 0.10 0.05 single pulse 0.02 0.01 DC 10 -4 10 0 -1 10 10 0 10 1 V 10 2 10 -5 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Semiconductor Group 5 tp SPD30N03L Typ. output characteristics I D = f (VDS) parameter: tp = 80 s SPD30N03L Typ. drain-source-on-resistance RDS(on) = f (ID) parameter: V GS SPD30N03L 75 A Ptot = 120W l kh f ji g 0.060 e VGS [V] a 2.5 b 3.0 b c d 60 55 50 0.050 d e f g 4.0 4.5 5.0 5.5 6.0 6.5 7.0 8.0 10.0 RDS(on) dc 3.5 0.045 0.040 0.035 0.030 0.025 0.020 0.015 e f g ID 45 40 35 30 c h i j k 25 20 15 10 5 b l 0.010 0.005 V VGS [V] = b 3.0 c 3.5 d 4.0 e f 4.5 5.0 g 5.5 h i 6.0 6.5 j 7.0 k i l h j a 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 k l 8.0 10.0 5.0 VDS 0.000 0 10 20 30 40 A 60 ID Typ. transfer characteristics I D= f (VGS) parameter: tp = 80 s VDS 2 x I D x RDS(on)max 100 Typ. forward transconductance gfs = f(ID ); Tj = 25C parameter: gfs 60 S A 50 45 40 60 g fs V ID 35 30 40 25 20 15 20 10 5 0 0 1 2 3 5 0 0 10 20 30 40 50 A 70 VGS Semiconductor Group 6 ID SPD30N03L Drain-source on-resistance Gate threshold voltage RDS(on) = f (Tj) parameter : ID = 30 A, VGS = 4.5 V SPD30N03L VGS(th) = f (Tj) parameter : VGS = V DS, ID = 80 A 3.0 V 0.050 0.040 2.4 RDS(on) 0.035 0.030 0.025 0.020 VGS(th) 98% typ 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 typ max 0.015 0.010 0.4 0.005 0.000 -60 0.2 0.0 -60 -20 20 60 100 140 C min -20 20 60 100 140 C 200 200 Tj Tj Typ. capacitances Forward characteristics of reverse diode C = f (VDS) parameter: V GS = 0 V, f = 1 MHz 10 4 IF = f (VSD ) parameter: Tj , tp = 80 s 10 3 SPD30N03L A pF 10 2 10 3 Coss IF 10 1 C Ciss Tj = 25 C typ Crss Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%) 10 2 0 5 10 15 20 25 30 V 40 10 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VDS Semiconductor Group 7 VSD SPD30N03L Avalanche Energy EAS = f (Tj) parameter: ID = 30 A, V DD = 25 V RGS = 25 250 Typ. gate charge VGS = f (QGate ) parameter: ID puls = 30 A SPD30N03L 16 V mJ 12 VGS EAS 150 10 8 100 0,2 VDS max 0,8 VDS max 6 4 50 2 0 20 40 60 80 100 120 140 C 180 0 0 10 20 30 40 50 60 Tj nC 80 Q Gate Drain-source breakdown voltage V(BR)DSS = f (Tj) SPD30N03L 37 V 35 V(BR)DSS 34 33 32 31 30 29 28 27 -60 -20 20 60 100 140 C 200 Tj Semiconductor Group 8 SPD30N03L Edition 03 / 1999 Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung, Balanstrae 73, 81541 Munchen (c) Siemens AG 1997 All Rights Reserved. Attention please! As far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes and circuits implemented within components or assemblies. The information describes a type of component and shall not be considered as warranted characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components1 of the Semiconductor Group of Siemens AG, may only be used in life-support devices or systems2 with the express written approval of the Semiconductor Group of Siemens AG. 1)A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2)Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain and/or protecf human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Semiconductor Group 9 |
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