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SUM60N04-12LT
New Product
Vishay Siliconix
Temperature Sensing MOSFET, N-Channel 40-V (D-S)
FEATURES
D D D D D D D D D Temperature-Sense Diodes for Thermal Shutdown TrenchFETr Power MOSFET 175_C Maximum Junction Temperature ESD Protected: 2000 V Logic-Level Low On-Resistance Avalanche Rated Low Gate Charge Fast Turn-On Time 5-Lead D2PAK
APPLICATIONS
D Automotive D Industrial
PRODUCT SUMMARY
V(BR)DSS (V)
40 Notes a. Package Limited
rDS(on) (W)
0.009 @ VGS = 10 V 0.012 @ VGS = 4.5 V
ID (A)
60a 60
DESCRIPTION
The SUM60N04-12LT is a 40-V n-channel, 15-mW logic level MOSFET in a 5-lead D2PAK package built on the Vishay Siliconix proprietary high-cell density TrenchFET technology. Two anti-parallel electrically isolated poly-silicon diodes are used to sense the temperature changes in the MOSFET. The gate of the MOSFET is protected from high voltage transients by two back-to-back poly-silicon zener diodes.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
D2Pak TO-263, 5 Leads
D
T1 G 12345 D1 T2 D2
S G T1 D T2 S Document Number: 71620 S-03830--Rev. A, 28-May-01 N-Channel MOSFET www.vishay.com
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SUM60N04-12LT
Vishay Siliconix
New Product
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage VGS Clamp Current Continuous Drain Current (TJ = 175_C) _ Avalanche Current Repetitive Avalanche Energy Source-to-Anode Voltage Source-to-Cathode Voltage Maximum Power Dissipationa Operating Junction and Storage Temperature Range TC = 25_C TA = 25_Cd PD TJ, Tstg L = 0.1 mH Tc = 25_C Tc = 100_C ID IAR EAR VSA VSC
Symbol
VDS VGS IG
Limit
40 "20 50 60a 50 50 125 100 100 110 3.75 -55 to 175
Unit
V mA
A
mJ V
W _C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambientd Junction-to-Case Notes: a. Package limited. b. Duty Cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1-inch square PCB FR4.
Symbol
RthJA RthJC
Limit
40 1.35
Unit
_C/W _
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Document Number: 71620 S-03830--Rev. A, 28-May-01
SUM60N04-12LT
New Product
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter Static
Drain-Source Breakdown Voltage VGS Clamp Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current V(BR)DSS VGS VGS(th) IGSS IDSS IDSS VGS = 0 V, ID = 1 mA VDS = 0 V, IG = 20 mA VDS = VGS, IDS = 1 mA VDS = 0 V, VGS = "5 V VDS = 35 V, VGS = 0 V VDS = 35 V, VGS = 0 V, TJ = 125_C VDS = 35 V, VGS = 0 V, TJ = 175_C VGS = 10 V, ID = 20 A Drain-Source On-State Resistancea VGS = 10 V, ID = 20 A, TJ = 125_C rDS(on) VGS = 10 V, ID = 20 A, TJ = 175_C VGS = 4.5 V, ID = 20 A VFD1 Sense Diode Forward Voltage Sense Diode Forward Voltage Increase Forward Transconductancea VFD2 DVF gfs IF = 250 mA IF = 250 mA From IF = 125 mA to IF = 250 mA VDS = 15 V, ID = 20 A 675 675 25 35 0.0095 0.0075 40 10 1 20 2 "250 1 50 250 0.009 0.0135 0.018 0.012 735 735 50 S mV W m mA nA V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 20 V, RL = 0.8 W ID ] 25 A, VGEN = 10 V, RG = 2.5 W VDS = 20 V, VGS = 10 V, ID = 25 A VGS = 0 V, VDS = 25 V, f = 1 MHz 1920 560 210 51 5.5 12 20 70 35 20 40 120 70 40 ns 70 nC pF
Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time IS ISM VSD trr IF = 60 A, VGS = 0 V IF = 60 A, di/dt = 100 A/ms 40 60 A 240 1.4 60 V ns
Notes: a Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c Independent of operating temperature.
Document Number: 71620 S-03830--Rev. A, 28-May-01
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SUM60N04-12LT
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
250 VGS = 10 thru 7 V 200 I D - Drain Current (A) 6V I D - Drain Current (A) 160 25_C 125_C 120 200 TC = -55_C
Transfer Characteristics
150
5V
100
4V
80
50 1, 2 V 0 0 2 4 6 8 10 3V
40
0 0 2 4 6 8
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Transconductance
80 TC = -55_C g fs - Transconductance (S) 60 25_C 125_C 40 r DS(on) - On-Resistance ( W ) 0.015 0.018
On-Resistance vs. Drain Current
0.012
VGS = 4.5 V VGS = 10 V
0.009
0.006
20
0.003
0 0 20 40 60 80 100
0.000 0 20 40 60 80 100 120
ID - Drain Current (A)
ID - Drain Current (A)
Capacitance
3000 15
Gate Charge
V GS - Gate-to-Source Voltage (V)
2500 C - Capacitance (pF) Ciss 2000
12
VGS = 20 V ID = 25 A
9
1500
6
1000 Crss 500 Coss
3
0 0 8 16 24 32 40
0 0 15 30 45 60 75
VDS - Drain-to-Source Voltage (V) www.vishay.com
Qg - Total Gate Charge (nC) Document Number: 71620 S-03830--Rev. A, 28-May-01
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SUM60N04-12LT
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.0 VGS = 10 V ID = 20 A r DS(on) - On-Resistance (W) (Normalized) 1.6 I S - Source Current (A) 100
Vishay Siliconix
Source-Drain Diode Forward Voltage
TJ = 150_C
1.2
TJ = 25_C 10
0.8
0.4
0.0 -50
1 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 1.4 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V)
Avalanche Current vs. Time
300 100 IAV (A) @ TJ = 25_C I Dav (A) 10 60
Drain-Source Breakdown vs. Junction Temperature
ID = 1 mA
V(BR)DSS (V)
50
IAV (A) @ TJ = 150_C 1
40
0.1 0.00001 0.0001 0.001 0.01 tin (Sec) 0.1 1
30 -50
-25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (_C)
Sense Diode Forward Voltage vs. Temperature
1.0 2000
Sense Diode Forward Voltage
IF (mA) @ 25_C
0.8 VF (V) @ IF = 250 mA V F (V) 0.6 VF (V) @ IF = 125 mA 0.4 I F ( mA) 100 125 150 175
1600
1200
800
0.2
400
0.0 -50
-25
0
25
50
75
0 0.0
0.2
0.4 VF (V)
0.6
0.8
1.0
TJ - Junction Temperature (_C) Document Number: 71620 S-03830--Rev. A, 28-May-01
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SUM60N04-12LT
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS OF G S CLAMPING DIODES (25_C UNLESS NOTED)
Gate-Source Voltage vs. Gate Current
10 1 10-1 10-2 I G (mA) 10-3 10-4 10-5 10-6 10-7 0 4 8 VGS (V) 12 16 20 IG (mA) @ 150_C
IG (mA) @ 25_C
THERMAL RATINGS
Maximum Avalanche and Drain Current vs. Case Temperature
75 500 10 ms I D - Drain Current (A) I D - Drain Current (A) 60 100 Limited by rDS(on) 100 ms
Safe Operating Area
45
30
10 TC = 25_C Single Pulse
1 ms 10 ms 100 ms dc
15
0 0 25 50 75 100 125 150 175
1 0.1 1 10 100
TC - Case Temperature (_C) 2 1 Normalized Effective Transient Thermal Impedance
VDS - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
Duty Cycle = 0.5
0.2
0.1 0.1 0.05 0.02
Single Pulse 0.01 10-5 10-4 10-3 10-2 10-1 1 3 Square Wave Pulse Duration (sec) Document Number: 71620 S-03830--Rev. A, 28-May-01
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SUM60N04-12LT
New Product
APPLICATIONS
Vishay Siliconix
+5 V C2 0.1 mF R1 180 kW 1% C3 0.1 mF R5, 18 kW IC1, LMV321 C1 560 pF R7 10 kW 1% R3, 18 kW INPUT R2 22 kW 1% - + R6, 560 W Gate Output Signal
R4, 560 kW, 1%
Signal Ground Power Ground
FIGURE 1.
The SUM60N04-12LT provides a non-committed diode to allow temperature sensing of the actual MOSFET chip. The addition of one simple comparator and a few other components is all that is required to implement a temperature protected MOSFET. Since it has a very tight tolerance on forward voltage, the forward voltage of the diode can be used to provide to shutdown signal. The diode forward voltage falls to around 0.4 V with a bias current of 250 mA when the MOSFET chip is close to the maximum permitted temperature value. The external comparator used to detect over temperature can also be used as a driver stage for the MOSFET, meaning that the on/off input is logic compatible, and can be driven from a logic gate. A typical circuit is shown in Figure 1. Here a LMV321 operational amplifier is used to drive the MOSFET, and as a comparator to when the maximum junction temperature is reached. The circuit will turn on once more when the chip has cooled to approximately 110_C, and can cycle on and off until the fault is cleared or the power is removed. This circuit has assumed a 5-V rail is available, but the circuit could easily be adapted for a 12-V rail, for example. The LMV321 op amp was selected to give reasonable output current to drive the MOSFET at a reasonable price. The SC-70 package means that the protection circuit uses very little board space. However the limited output current means that it can only be used in slow switching applications, where one microsecond switching time and limited dv/dt immunity can be
Document Number: 71620 S-03830--Rev. A, 28-May-01
accepted. For PWM and other faster applications, a buffer should be added to drive the MOSFET, or the schematic in Figure 2 used to give fast switching speed. The reference voltage for the trip point is derived from the 5-V rail, which should have reasonable voltage accuracy and stability (" 0.5 V). A voltage reference could be added if required, but the circuit is only intended to make the MOSFET invulnerable to drastic faults that might otherwise cause it to fail, not to give a precise shutdown point. 1% resistors are used to provide a reference voltage of 0.545 V, giving a nominal rising trip point of around 155_C, allowing for the hysteresis drop over R7. A 560-pF capacitor across the inputs of the comparator provides some noise immunity and gives a response time of around a micro second, just faster than the switching speed of the MOSFET in this circuit (faster response has diminishing returns as the turn-off time is fixed). This does have a side effect of introducing such a delay at turn-on. If this is an issue (although if this delay is an issue, the switching time should be reviewed also), a separate driver could be added using a comparator for over temperature detection only as shown in Figure 2. The diode is then left biased whenever the power is applied to the load and there is no turn-on delay. In a very noisy environment C1 should be increased and additional capacitors may also be required from each input of the comparator to ground and on the logic input.
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SUM60N04-12L T
7
SUM60N04-12LT
Vishay Siliconix
New Product
The bias current of 250-mA nominal is derived from the input signal. In this manner, a simple comparator can be used as a driver for normal on/off operation and a fault detector circuit. The circuit used to provide the input signal must therefore be able to source 0.25 mA with no significant voltage drop. The LMV321 can provide a output current of 60-mA typical, which provides reasonable switching time for non-PWM applications. A 560-W resistor is added in series to protect the op amp and to prevent instability, but will result in switching times of several micro seconds. A lower value may be possible depending on layout, but may violate conditions recommended by the op amp manufacturer. Hysteresis is added by means of a resistor network around the comparator. Approximately 40_C hysteresis is added using the components shown. This hysteresis could be reduced if necessary by increasing the value of R4. Another means of implementing hysteresis is to use the output of the comparator to provide some of the bias current for the sensing diode. When the comparator output is low (tripped/off), the bias current is reduced by, say, 150 mA, causing the forward voltage to drop by around 50 mV. This concept would also allow a lower sourcing capability in the logic circuit providing the on/off signal
and therefore should be used if input current requirements become a problem. With the input high, bias current flows and as long as the forward voltage of the diode is higher than 0.465 V, the comparator output is high and the MOSFET is on. If the forward voltage of the diode drops below 0.465 V, the comparator output goes low and the MOSFET is turned off. The gate drive voltage can also be used as an output signal (if required) for logic to interpret and to signify that there is a fault. Note the cathode of the sensing diode should NOT be connected directly to the source of the MOSFET as the noise introduced by high currents in the source loop could affect operation of the sensing circuit. A separate signal ground should be used and connect to power ground at one point only. A variation on this schematic is shown in Figure 2. Here a low cost comparator (again in a SOT-23 or SC-70) is used to provide a fault output signal only. The diode bias current is taken from the 5 V. In this manner the diode bias is applied at all times, so the noise filtering capacitor, C1 will not introduce a turn-on delay. The fault output signal could be used to enable the gate driver as shown, or fed to larger monitoring circuit to shutdown the MOSFET.
+5 V C2 0.1 mF R1 180 kW 1% C3 0.1 mF
R5 10 kW IN
DRIVER
IC1, LMV331 C1 560 pF R6 10 kW 1% R3, 18 kW - + ENABLE
R4, 560 kW, 1%
R2 22 kW 1%
Signal Ground Power Ground
FIGURE 2.
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Document Number: 71620 S-03830--Rev. A, 28-May-01
SUB60N04-15LT

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