View 2SK3667_435860.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

2SK3667
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI)
2SK3667
Switching Regulator Applications
* * * * Low drain-source ON resistance: RDS (ON) = 0.75 (typ.) High forward transfer admittance: |Yfs| = 5.5S (typ.) Low leakage current: IDSS = 100A (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Maximum Ratings (Ta = 25C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 30 7.5 30 45 189 7.5 4.5 150 -55~150 A W mJ A mJ C C
1: Gate 2: Drain 3: Source
Unit V V V
Pulse (t = 1 ms) (Note 1)
Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
SC-67 2-10U1B
Weight : 1.7 g (typ.)
Thermal Characteristics
Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 2.78 62.5 Unit C/W C/W
2
Note 1: Ensure that the channel temperature does not exceed 150. Note 2: VDD = 90 V, Tch = 25C, L = 5.88 mH, IAR = 7.5 A, RG = 25 Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution.
3 1
1
2004-12-07
2SK3667
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Fall time Switching time Turn-off time Total gate charge Gate-source charge Gate-drain charge Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) Test Condition VGS = 25 V, VDS = 0 V IG =10 A, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 4 A VDS = 10 V, ID = 4 A Min Typ. Max Unit
30
600 2.0

0.75 5.5 1300 12 120 20 50 35 150 33 18 15
10
100
A
V
A
V V
4.0 1.0
1.5
S
Yfs
Ciss Crss Coss tr ton tf toff Qg Qgs Qgd

VDS = 25 V, VGS = 0 V, f = 1 MHz
pF
10 V VGS 0V 50 ID = 4 A VOUT

ns

RL = 50
VDD 200 V - Duty < 1%, tw = 10 s =

nC
VDD 400 V, VGS = 10 V, ID = 7.5 A -

Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition Min Typ. Max 7.5 30 Unit A A V ns

IDR = 7.5 A, VGS = 0 V IDR = 7.5 A, VGS = 0 V, dIDR/dt = 100 A/s

1200 12
-1.7
C
Marking
K3667
Part No. (or abbreviation code) Lot No. (weekly code) A line indicates lead (Pb)-free package or lead (Pb)-free finish.
2
2004-12-07
2SK3667
ID - VDS
10 10,8 6 5.5 COMMON SOURCE Tc = 25C PULSE TEST 20
ID - VDS
10 8 COMMON SOURCE Tc = 25C PULSE TEST 6 12 5.5 8 5.25 5 4 4.75 4.5 0 0 VGS = 4 V 10 20 30 40 50
DRAIN CURRENT ID (A)
DRAIN CURRENT ID (A)
20
8
16
5.25 6 5 4 4.75 2 4.5 VGS = 4V 0 0 4 8 12 16
DRAIN-SOURCE VOLTAGE
VDS
(V)
DRAIN-SOURCE VOLTAGE
VDS
(V)
ID - VGS
COMMON SOURCE
VDS - VGS
DRAIN CURRENT ID (A)
16
VDS = 20 V PULSE TEST
VDS (V)
20
10
8 ID = 10 A 6 COMMON SOURCE Tc = 25 PULSE TEST 4 5 2 2.5 0 0
12
8 Tc = -55C 4 100 25 0 0
DRAIN-SOURCE VOLTAGE
2
4
6
8
10
4
8
12
16
20
GATE-SOURCE VOLTAGE
VGS
(V)
GATE-SOURCE VOLTAGE
VGS
(V)
Yfs - ID FORWARD TRANSFER ADMITTANCE Yfs (S)
100 10
RDS (ON) - ID
DRAIN-SOURCE ON RESISTANCE RDS (ON) ()
COMMON SOURCE Tc = 25C PULSE TEST
10
Tc = -55C
25 1 100
1
VGS = 10 V15V
COMMON SOURCE VDS = 20 V 0.1 0.1 PULSE TEST 1 10 100
0.1 0.1
1
10
100
DRAIN CURRENT ID
(A)
DRAIN CURRENT ID
(A)
3
2004-12-07
2SK3667
RDS (ON) - Tc
4 100 COMMON SOURCE
IDR - VDS
COMMON SOURCE Tc = 25C PULSE TEST 10
DRAIN-SOURCE ON RESISTANCE RDS (ON) ( )
3
2 4
ID = 7.5A
DRAIN REVERSE CURRENT IDR (A)
VGS = 10 V PULSE TEST
1 10 5 3 1 -0.6 VGS = 0, -1 V -0.8 -1.0 -1.2
1
2
0 -80
-40
0
40
80
120
160
0.1 0
-0.2
-0.4
CASE TEMPERATURE
Tc
(C)
DRAIN-SOURCE VOLTAGE
VDS
(V)
CAPACITANCE - VDS
10000 5
Vth - Tc
GATE THRESHOLD VOLTAGE Vth (V)
(pF)
Ciss 1000
4
CAPACITANCE C
Coss 100
3
2 COMMON SOURCE 1 VDS = 10 V ID = 1 mA PULSE TEST 0 -80 -40 0 40 80 120 160
10
COMMON SOURCE VGS = 0 V f = 1 MHz Tc = 25C
Crss
1 0.1
1
10
100
DRAIN-SOURCE VOLTAGE
VDS
(V)
CASE TEMPERATURE
Tc
(C)
PD - Tc
DYNAMIC INPUT / OUTPUT CHARACTERISTICS
VDS (V)
400
VDS VDD = 100 V
16
40
DRAIN-SOURCE VOLTAGE
300 200 200 VGS 400 COMMON SOURCE 100 ID = 7.5 A Tc = 25C PULSE TEST 0 0 10 20 30 40
12
8
20
4
0
0
40
80
120
160
200
0 50
CASE TEMPERATURE
Tc
(C)
TOTAL GATE CHARGE
Qg
(nC)
4
2004-12-07
GATE-SOURCE VOLTAGE VGS (V)
60
500
20
DRAIN POWER DISSIPATION PD (W)
2SK3667
rth - tw
NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c)
10
1
Duty=0.5 0.2
0.1
0.1 0.05 0.02 PDM SINGLE PULSE 0.01 t T Duty = t/T Rth (ch-c) = 2.78C/W
0.01
0.001 10
100
1
10
100
1
10
PULSE WIDTH
tw
(s)
SAFE OPERATING AREA
100 ID max (PULSED) * 400
EAS - Tch
AVALANCHE ENERGY EAS (mJ)
100 s *
300
DRAIN CURRENT ID (A)
10
ID max (CONTINUOUS) * 1 ms *
200
1
DC OPERATION Tc = 25C
100
SINGLE NONREPETITIVE PULSE
0.1
CURVES LINEARLY
Tc=25 MUST WITH BE DERATED IN
0 25
50
75
100
125
150
INCREASE
CHANNEL TEMPERATURE (INITIAL) Tch (C)
VDSS max
TEMPERATURE.
0.01 1
10
100
1000
15 V
BVDSS IAR VDD VDS
DRAIN-SOURCE VOLTAGE
VDS
(V)
-15 V
TEST CIRCUIT RG = 25 VDD = 90 V, L = 5.88mH
WAVE FORM
AS =
1 B VDSS L I2 B 2 - VDD VDSS
5
2004-12-07
2SK3667
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
030619EAA
* The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations.
6
2004-12-07

▲Up To Search▲

Price & Availability of 2SK3667

	To Download 2SK3667 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .