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| BPV22NF(L) Vishay Semiconductors Silicon PIN Photodiode Description BPV22NF(L) is a high speed and high sensitive PIN photodiode in a plastic package with a spherical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs on GaAs and GaAlAs on GaAlAs IR emitters ( p = 950 nm, srel( = 875 nm) > 90 %). Lens radius and chip position are perfectly matched to the chip size, giving high sensitivity without compromising the viewing angle. In comparison with flat packages the spherical lens package achieves a sensitivity improvement of 80 %. 94 8633 Features * * * * * * * Large radiant sensitive area (A = 7.5 Wide viewing angle = 60 Improved sensitivity Fast response times Low junction capacitance Plastic package with universal IR filter Option "L": long lead package optional available with suffix "L"; e.g.: BPV23FL * Lead-free component * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC mm2) Applications Infrared remote control and free air transmission systems in combination with IR emitter diodes (TSU.-, TSI.-, or TSH.-Series). High sensitivity detector for high data rate transmission systems. The IR filter matches perfectly to the high speed infrared emitters in the 830 nm to 880 nm wavelength range. Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Reverse Voltage Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/ Ambient t5s Tamb 25 C Test condition Symbol VR PV Tj Tamb Tstg Tsd RthJA Value 60 215 100 - 55 to + 100 - 55 to + 100 260 350 Unit V mW C C C C K/W Document Number 81509 Rev. 1.4, 08-Mar-05 www.vishay.com 1 BPV22NF(L) Vishay Semiconductors Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Forward Voltage Breakdown Voltage Reverse Dark Current Diode capacitance Serial Resistance Test condition IF = 50 mA IR = 100 A, E = 0 VR = 10 V, E = 0 VR = 0 V, f = 1 MHz, E = 0 VR = 12 V, f = 1 MHz Symbol VF V(BR) Iro CD RS 60 2 70 400 30 Min Typ. 1 Max 1.3 Unit V V nA pF Optical Characteristics Tamb = 25 C, unless otherwise specified Parameter Open Circuit Voltage Temp. Coefficient of Vo Short Circuit Current Reverse Light Current Temp. Coefficient of Ira Absolute Spectral Sensitivity Angle of Half Sensitivity Wavelength of Peak Sensitivity Range of Spectral Bandwidth Quantum Efficiency Noise Equivalent Power Detectivity Rise Time Fall Time Cut-Off Frequency = 950 nm VR = 10 V, = 950 nm VR = 10 V, = 950 nm VR = 10 V, RL = 1 k, = 820 nm VR = 10 V, RL = 1 k, = 820 nm VR = 12 V, RL = 1 k, = 870 nm VR = 12 V, RL = 1 k, = 950 nm Test condition Ee = 1 mW/cm2, = 950 nm Ee = 1 mW/cm2, = 950 nm Ee = 1 mW/cm , = 950 nm 2 2 Symbol Vo TKVo Ik Ira TKIra s() s() p 0.5 NEP D* tr tf fc fc Min Typ. 370 - 2.6 80 Max Unit mV mV/K A A %/K A/W A/W deg nm nm % W/ Hz cmHz/W ns ns MHz MHz Ee = 1 mW/cm , = 870 nm, VR = 5 V Ee = 1 mW/cm2, = 950 nm, VR = 10 V VR = 5 V, = 870 nm VR = 5 V, = 950 nm 55 85 0.1 0.57 0.6 60 940 790 to 1050 90 4 x 10-14 6 x 1012 100 100 4 1 www.vishay.com 2 Document Number 81509 Rev. 1.4, 08-Mar-05 BPV22NF(L) Vishay Semiconductors Typical Characteristics (Tamb = 25 C unless otherwise specified) 8 C D - Diode Capacitance ( pF ) I ra - Reverse Light Current ( A ) 100 1 mW/cm 2 = 950 nm 0.5 mW/cm 2 0.2 mW/cm 2 0.1 mW/cm 2 0.05 mW/cm 2 0.02 mW/cm 2 0.1 94 8412 6 E=0 f = 1 MHz 4 10 2 0 0.1 94 8430 1 1 10 100 1 V R - Reverse Voltage ( V ) 10 100 VR - Reverse Voltage ( V ) Figure 1. Reverse Dark Current vs. Ambient Temperature Figure 4. Reverse Light Current vs. Reverse Voltage I ra rel - Relative Reverse Light Current 1.4 C D - Diode Capacitance ( pF ) 80 E=0 f = 1 MHz 60 1.2 VR = 5 V = 950 nm 1.0 40 0.8 20 0.6 0 20 40 60 80 100 94 8407 0 0.1 1 10 100 94 8409 Tamb - Ambient Temperature ( C ) VR - Reverse V oltage ( V ) Figure 2. Relative Reverse Light Current vs. Ambient Temperature Figure 5. Diode Capacitance vs. Reverse Voltage S ( ) rel - Relative Spectral Sensitivity 1000 I ra - Reverse Light Current ( A ) 1.2 1.0 0.8 0.6 0.4 0.2 0.0 750 100 10 VR = 5 V = 950 nm 1 0.1 0.01 94 8411 0.1 1 10 E e - Irradiance ( mW/cm 2 ) 94 8426 850 950 1050 - Wavelength ( nm ) 1150 Figure 3. Reverse Light Current vs. Irradiance Figure 6. Relative Spectral Sensitivity vs. Wavelength Document Number 81509 Rev. 1.4, 08-Mar-05 www.vishay.com 3 BPV22NF(L) Vishay Semiconductors 0 10 20 30 S rel - Relative Sensitivity Figure 7. Relative Radiant Sensitivity vs. Angular Displacement 40 1.0 0.9 0.8 0.7 50 60 70 80 0.6 0.4 0.2 0 0.2 0.4 0.6 94 8413 Package Dimensions in mm 9612205 www.vishay.com 4 Document Number 81509 Rev. 1.4, 08-Mar-05 BPV22NF(L) Vishay Semiconductors Package Dimensions in mm 95 1 1475 Document Number 81509 Rev. 1.4, 08-Mar-05 www.vishay.com 5 BPV22NF(L) Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 6 Document Number 81509 Rev. 1.4, 08-Mar-05 This datasheet has been download from: www..com Datasheets for electronics components. |
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