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DCR820SG
DCR820SG
Phase Control Thyristor
Supersedes October 2000 version, DS4214-5.1 DS4214-6.0 July 2001
FEATURES
s s
KEY PARAMETERS VDRM IT(AV) ITSM dVdt* dI/dt 6500V 387A 6000A 1000V/s 100A/s
Double Side Cooling High Surge Capability
APPLICATIONS
s s s s s
High Power Drives High Voltage Power Supplies DC Motor Control Welding Battery Chargers
*Higher dV/dt selections available
VOLTAGE RATINGS
Type Number Repetitive Peak Voltages VDRM VRRM V 6500 6400 6300 6200 6100 6000 Conditions
DCR820SG65 DCR820SG64 DCR820SG63 DCR820SG62 DCR820SG61 DCR820SG60
Tvj = 0 to 125C, IDRM = IRRM = 50mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V Respectively
Outline type code: G. See Package Details for further information. Fig. 1 Package outline
Lower voltage grades available.
ORDERING INFORMATION
When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR820SG62 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order.
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DCR820SG
CURRENT RATINGS
Tcase = 60C unless stated otherwise Symbol Double Side Cooled IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 387 608 567 A A A Parameter Conditions Max. Units
Single Side Cooled (Anode side) IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 260 408 357 A A A
CURRENT RATINGS
Tcase = 80C unless stated otherwise Symbol Double Side Cooled IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 310 485 447 A A A Parameter Conditions Max. Units
Single Side Cooled (Anode side) IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 204 321 279 A A A
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DCR820SG
SURGE RATINGS
Symbol ITSM I2t ITSM I2t Parameter Surge (non-repetitive) on-state current I2t for fusing Surge (non-repetitive) on-state current I2t for fusing Conditions 10ms half sine; Tcase = 125oC VR = 50% VRRM - 1/4 sine 10ms half sine; Tcase = 125oC VR = 0 Max. 4.8 115 x 103 6.0 180 x 103 Units kA A2s kA A2s
THERMAL AND MECHANICAL DATA
Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 12.0kN with mounting compound On-state (conducting) Tvj Virtual junction temperature Reverse (blocking) Tstg Storage temperature range Clamping force -55 10.8 125 150 13.2
o
Min. dc Anode dc -
Max. 0.032 0.064 0.064 0.008 0.016 135
Units
o
C/W
o
C/W C/W C/W C/W
o
o
Double side Single side
o
Rth(c-h)
Thermal resistance - case to heatsink
o
C
C C
o
kN
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DCR820SG
DYNAMIC CHARACTERISTICS
Symbol IRRM/IDRM dV/dt Parameter Peak reverse and off-state current Maximum linear rate of rise of off-state voltage Conditions At VRRM/VDRM, Tcase = 125oC To 67% VDRM Tj = 125oC. From 67% VDRM to 1000A, Gate source 10V, 5 tr 0.5s. Tj = 125oC. At Tvj = 125oC At Tvj = 125oC VD = 67% VDRM, Gate source 20V, 10 Rise time 0.5s, Tj = 25oC Tj = 25oC, VD = 20V. Tj = 25oC, VD = 5V, IT = 5A, ITM = 500A IT = 500A, tp = 1ms, Tj = 125C, VRM = 100V, dIRR/dt = 10A/s, dVDR/dt = 25V/s to 3000V IT = 320A, -dIT/dt = 6A/s Repetitive 50Hz Non-repetitive Min. 30 Max. 50 1000 50 100 1.6 3.5 3.3 1 120 Units mA V/s A/s A/s V m s A mA s
dI/dt
Rate of rise of on-state current
VT(TO) rT tgd IL IH tq
Threshold voltage On-state slope resistance Delay time Latching current Holding current
Turn-off time
500
1200
QS
Stored charge - triangular approximation through IRR and 25% IRR
600
1500
C
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol VGT Parameter Gate trigger voltage Gate trigger current Gate non-trigger voltage Peak forward gate voltage Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak gate power Mean gate power Anode positive with respect to cathode See Fig.8/9 Gate characteristics curves and table Conditions VDRM = 5V, Tcase = 25oC VDRM = 5V, Tcase = 25oC At VDRM Tcase = 125oC Anode positive with respect to cathode Anode negative with respect to cathode Typ. Max. 3.0 300 0.25 30 0.25 5 10 100 5 Units V mA V V V V A W W
IGT
VGD VFGM VFGN VRGM IFGM PGM PG(AV)
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DCR820SG
CURVES
1500 Tj = 125C
600 Tj = 125C
1250
500
Instantaneous on-state current, IT - (A)
Instantaneous on-state current, IT - (A)
1000
400
750
300
500
200
250
100
0 1.0 2.0 3.0 4.0 5.0 6.0 Instantaneous on-state voltage, VT - (V) 7.0
0
1
1.5 2.5 3 3.5 2.0 Instantaneous on-state voltage, VT - (V)
4
Fig.2 Maximum (limit) on-state characteristics
Fig.3 Maximum (limit) on-state characteristics
VTM Equation:VTM = A + Bln (IT) + C.IT+D.IT
Where
A = -0.759775 B = 0.639225 C = 0.004376 D = -0.092153 these values are valid for Tj = 125C for IT 100A to 1500A
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2000 1800 1600
800
700
600
1400
Power loss - (W)
1200 1000 800 600 400 200 0 0 50 100 150 200 250 300 350 400 Mean on-state current, IT(AV) - (A) Conduction angle 180 120 90 60 30 15
Power loss - (W)
500
400
300 Conduction angle 200 180 120 90 60 30 15 0 0 50 100 150 200 Mean on-state current, IT(AV) - (A) 250
100
Fig.4 Sine wave power dissipation curves
2000 1800 1600
Fig.5 Sine wave power dissipation curves
800
700
600
1400
Power loss - (W)
Power loss (W)
1200 1000 800 600 400 200 0 0 100 400 200 300 500 Mean on-state current, IT(AV) - (A) 600 Conduction angle D.C. 180 120 90 60 30
500
400
300 Conduction angle D.C. 180 120 90 60 30 0 0 50 100 150 200 250 Mean on-state current, IT(AV) - (A) 300 350
200
100
Fig.6 Square wave power dissipation curves
Fig.7 Square wave power dissipation curves
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DCR820SG
10 9 8
Gate trigger voltage, VGT - (V)
Upper limit Lower limit
7 6 5 4 3 2 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 Gate trigger current, IGT - (A) 0.7 0.8 0.9 1.0 Tj = 125C Tj = 25C Table gives pulse power PGM in Watts Preferred gate drive area Tj = -40C Pulse Width s 100 200 500 1000 10000 Frequency Hz 50 150 150 150 150 20 100 150 150 150 100 400 150 125 100 25 -
Fig.8 Gate characteristics
25 Upper Limit Lower Limit 20
Gate trigger voltage, VGT - (V)
5W 10W 20W 50W 100W
15
10
5
0 0 1 2 3 4 5 6 Gate trigger current, IGT - (A) 7 8 9 10
Fig.9 Gate characteristics
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DCR820SG
10000 Conditions: Tj = 125C IT = 320A VR = 100V
Total stored charge, QRA3 - (C)
1000 Conditions: Tj = 125C IT = 320A VR = 100V
Peak reverse recovery current, IRR - (A)
Max
Max Min
1000 Min IT QRA3 25% IRR IRR 100
100
dI/dt 100 0.1 1.0 10
10 0.1
1.0
10
100
Rate of decay of on-state current, dI/dt - (A/s)
Rate of decay of on-state current, dI/dt - (A/s)
Fig.10 Stored charge
Fig.11 Reverse recovery current
12.5
0.1 Anode side cooled
Thermal impedance - junction to case, Zth(j-c) - (C/W)
Peak half sinewave on-state current - (kA)
10
7.5 I2t value for fusing - (A2s x 106)
Double side cooled
0.01
5 I2t
0.1
2.5
0.05
Conduction Effective thermal resistance Junction to case C/W Double side 0.032 0.034 0.044 0.057 Single side 0.064 0.066 0.076 0.089
0 1 ms 10 1 5 10 Cycles at 50Hz Duration
0 50
d.c. Halfwave 3 phase 120 6 phase 60
0.001 0.001
0.01
0.1 Time - (s)
1.0
10
Fig.12 Surge (non-repetitive) on-state current vs time (with 50% VRRM @ Tcase = 125C)
Fig.13 Maximum (limit) transient thermal impedance - junction to case
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DCR820SG
PACKAGE DETAILS
For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
Hole O3.6x2.0 deep (in both electrodes)
Cathode tab
Cathode O58.5 max O34 nom
O1.5 Gate
27.0 25.4
O34 nom
Anode
Nominal weight: 250g Clamping force: 12kN 10% Lead lenght: 420mm Lead terminal connector: M4 ring Package outline type code: G
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of `T' 22mm Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839
HEATSINKS
Power Assembly has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or Customer Services.
http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2001 Publication No. DS4224-6 Issue No. 6.0 July 2001 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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