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| KSB794/795 KSB794/795 Audio Frequency Power Amplifier * Low Speed Switching Industrial Use 1 TO-126 2.Collector 3.Base 1. Emitter PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO Parameter Collector-Base Volage : KSB794 : KSB795 VCEO Collector-Emitter Volage : KSB794 : KSB795 VEBO IC ICP IB PC PC TJ TSTG Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) Collector Dissipation (Ta=25C) Collector Dissipation (TC=25C) Junction Temperature Storage Temperature - 60 - 80 -8 - 1.5 -3 - 0.15 1 10 150 - 55 ~ 150 V V V A A A W W C C R1.= 10 k R2.= 500 Value - 60 - 80 Units V V * PW300s, Duty Cycle10% Electrical Characteristics TC=25C unless otherwise noted Symbol ICBO ICER ICEX1 ICEX2 IEBO hFE1 hFE2 VCE(sat) VBE(sat) Parameter Collector Cut-off Current Collector Cut-off Current Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Test Condition VCB = - 60V, IE = 0 VCE = - 60V, RBE = 51 @ TC= 125C VCE = - 60V, VBE (off) = 1.5V VCE = - 60V, VBE (off) = 1.5V @ TC= 125C VEB = - 5V, IC = 0 VCE = - 2V, IC = - 0.5A VCE = - 2V, IC = - 1A IC = - 1A, IB = - 1mA IC = - 1A, IB = - 1mA 1000 2000 Min. Max. - 10 -1 - 10 -1 -1 30000 -1.5 -2 V V Units A mA A mA mA * Pulse Test: PW350s, Duty Cycle2% Pulsed. hFE Classificntion Classification hFE2 R 2000 ~ 5000 O 4000 ~ 10000 Y 8000 ~ 30000 (c)2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSB794/795 Typical Characteristics IB=-100 0uA IB = -5 00 uA -2.0 -1.8 100000 -3 IB= uA 00 IC(A), COLLECTOR CURRENT -1.6 -1.4 -1.2 -1.0 -0.8 0uA -2 0 IB= hFE, DC CURRENT GAIN uA 150 IB=- VCE=-2V Plused 10000 IB=-100uA IB =-80uA -0.6 -0.4 -0.2 -0.0 -0.0 1000 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 100 -0.01 -0.1 -1 -10 VCE(V), COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain -10 10 VCE(SAT). VBE(SAT)[V], SATURATION VOLTAGE IC =2000IB Single pulse s 0u =3 PW 0us 10 IC(A), COLLECTOR CURRENT VBE(SAT) 1 -1 3m 1ms s Dis DC sip atio nL imit ed 30 0u s VCE (SAT) S/ b 0.1 Lim ite d -0.1 -0.1 -1 0.01 1 10 100 IC[A],COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Safe Operating Area 160 14 140 12 120 100 PD[W], POWER DISSIPATION 125 150 175 200 dT[%], IC DERATING 10 8 80 60 S/b Lim ited 6 40 Di ss ipa tio n 4 20 Lim ite d 2 0 0 25 50 75 100 0 0 25 50 75 100 125 150 175 TC[ C], CASE TEMPERATURE O TC[ C], CASE TEMPERATURE o Figure 5. Derating Curve of Safe Operating Area Figure 6. Power Derating (c)2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSB794/795 Package Demensions TO-126 0.10 3.90 8.00 0.30 3.25 0.20 14.20MAX o3.20 0.10 11.00 0.20 (1.00) 0.75 0.10 1.60 0.10 0.75 0.10 0.30 (0.50) 1.75 0.20 #1 2.28TYP [2.280.20] 2.28TYP [2.280.20] 13.06 16.10 0.20 0.50 -0.05 +0.10 Dimensions in Millimeters (c)2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWERTM FAST(R) OPTOPLANARTM ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TruTranslationTM TinyLogicTM UHCTM UltraFET(R) VCXTM STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2001 Fairchild Semiconductor Corporation Rev. H3 |
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