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| TLP599G TOSHIBA Photocoupler Photo Relay TLP599G Telecommunication Data Acquisition Measurement Instrumentation Unit in mm The TOSHIBA TLP599G consists of a gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a six lead plastic DIP package (DIP6). The TLP599G is a bi-directional switch which can replace mechanical relays in many applications. * * * * * * * Peak off-state voltage: 400V (min.) On-state current: 120mA (max.) (A connection) On-state resistance: 30 (max.) (A connection) Insulation thickness: 0.4mm (max.) Isolation voltage: 2500Vrms (min.) UL recognized: UL1577, file no. E67349 Trigger LED current (Ta = 25C) Trigger LED Current (mA) @ION = 120mA Min. Max. -- -- 2 5 TOSHIBA 11-7A8 Classification (Note 1) (IFT2) Standard Marking Of Classification T2 T2, blank Pin Configuration (top view) 1 2 3 6 5 4 1 : Anode 2 : Cathode 3 : NC 4 : Drain D1 5 : Source 6 : Drain D2 (Note 1): Application type name for certification test, please use standard product type name, i.e. TLP599G (IFT2) :TLP599G Schematic 1 2 6 5 4 1 2002-09-25 TLP599G Maximum Ratings (Ta = 25C) Characteristic Forward current Forward current derating (Ta 25C) LED Peak forward current (100 s pulse, 100 pps) Reverse voltage Junction temperature Off-state output terminal voltage A connection On-state RMS current Detector B connection C connection A connection On-state current derating (Ta 25C) B connection C connection Junction temperature Storage temperature range Operating temperature range Lead soldering temperature (10 s) Isolation voltage (AC, 1 min., R.H. 60%) (Note 2) Tj Tstg Topr Tsol BVS ION / C ION Symbol IF IF / C IFP VR Tj VOFF Rating 50 -0.5 1 5 125 400 120 150 200 -1.2 -1.5 -2.0 125 -55~125 -40~85 260 2500 C C C C Vrms mA / C mA Unit mA mA / C A V C V (Note 2): Device considered a two-terminal device: Pins 1, 2 and 3 shorted together, and pins 4, 5 and 6 shorted together. Recommended Operating Conditions Characteristic Supply voltage Forward current On-state current Operating temperature Symbol VDD IF ION Topr Min. -- 7.5 -- -20 Typ. -- 15 -- -- Max. 320 25 120 80 Unit V mA mA C Circuit Connections 1 2 3 6 5 LOAD 1 2 3 6 5 4 LOAD 1 2 3 6 5 LOAD or 4 AC DC DC DC 4 A connection B connection C connection 2 2002-09-25 TLP599G Individual Electrical Characteristics (Ta = 25C) Characteristic Forward voltage LED Reverse current Capacitance Detector Off-state current Capacitance Symbol VF IR CT IOFF COFF Test Condition IF = 10 mA VR = 5V V = 0, f = 1 MHz VOFF = 400 V V = 0, f = 1 MHz Min. 1.0 -- -- -- -- Typ. 1.15 -- 30 -- -- Max. 1.3 10 -- 1 -- Unit V A pF A pF Coupled Electrical Characteristics (Ta = 25C) Characteristic Trigger LED current A connection On-state Resistance B connection C connection RON Symbol IFT Test Condition ION = 120 mA ION = 120 mA, IF = 10 mA ION = 150 mA, IF = 10 mA ION = 200 mA, IF = 10 mA Min. -- -- -- -- Typ/ 1 20 12 6 Max. 5 30 20 10 Unit mA Isolation Characteristics (Ta = 25C) Characteristic Capacitance input to output Isolation resistance Symbol CS RS Test Condition VS = 0, f = 1 MHz VS = 500 V, R.H. 60% AC, 1 minute Isolation voltage BVS AC, 1 second (in oil) DC, 1 minute (in oil) Min. -- 5 10 10 Typ. 0.8 10 14 Max. -- -- -- -- -- Unit pF Vrms Vdc 2500 -- -- -- 5000 5000 Switching Characteristics (Ta = 25C) Characteristic Turn-on time Turn-off time Symbol ton toff Test Condition RL = 200 VDD = 20 V, IF = 10 mA Min. -- -- Typ. -- -- Max. 2 2 Unit ms Switching Time Test Circuit IF 1 2 4 6 VDD RL IF VOUT 90% 10% toff VOUT ton 3 2002-09-25 TLP599G I F - Ta 100 300 ION(RMS) - Ta (mA) 80 250 C connection 200 B connection A connection 100 Allowable forward current IF (mA) 60 On-state current ION(RMS) 150 40 20 50 0 20 0 20 40 60 80 100 120 0 20 0 20 40 60 80 100 Ambient temperature Ta (C) Amebient temperature Ta (C) IFP - DR 5000 3000 Pulse width 100 s Ta = 25 C 100 50 30 1000 500 300 Ta = 25 C IF - VF Allowable pulse forward current IFP (mA) (mA) Forward current IF 103 102 101 100 10 5 3 100 50 30 1 0.5 0.3 0.1 0.6 10 3 3 3 0.8 1.0 1.2 1.4 1.6 1.8 Duty cycle ratio DR Forward voltage VF (V) VF/Ta - IF 1000 IFP - VFP IFP (mA) Pulse forward current 500 300 2.8 Forward voltage temperature coefficient VF/Ta (mA/C) 2.4 100 50 30 2.0 1.6 1.2 10 Pulse width 10 s 5 3 Repetitive frequency = 100 Hz Ta = 25 C 0.8 0.4 0.1 0.3 0.5 1 3 5 10 30 50 1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 Forward current IF (mA) Pulse forward voltage VFP (V) 4 2002-09-25 TLP599G P c - Ta 500 A connection 3.0 ION = rated A connection IFT - Ta Allowable MOSFET power dissipation Pc (mW) Relative trigger LED current IFT / IFT (Ta = 25 C) 400 2.5 2.0 300 1.5 200 1.0 100 0.5 0 20 0 20 40 60 80 100 0 20 0 20 40 60 80 Ambient temperature Ta (C) Amebient temperature Ta (C) ION - VON (A connection) 200 RON - Ta 20 ION = Rated IF = 10 mA 16 tRON < 1 s A connection 12 (mA) 100 0 On-state resistance RON(RMS) On-state current ION () Ta = 25 C IF = 10 mA 8 100 4 200 4 2 0 2 4 0 20 0 20 40 60 80 On-state current VON (V) Amebient temperature Ta (C) IOFF - Ta 1000 500 VOFF = 400 V 500 IF = 7.5 mA RL = 200 tON, tOFF - Ta (nA) Off-state current IOFF 100 50 30 Switching time tON, tOFF (s) 300 400 VDD = 20 V 300 tON 200 10 5 3 1 20 100 tOFF 0 20 40 60 80 100 0 20 0 20 40 60 80 Ambient temperature Ta (C) Ambient temperature Ta (C) 5 2002-09-25 TLP599G RESTRICTIONS ON PRODUCT USE 000707EBC * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. * The products described in this document are subject to the foreign exchange and foreign trade laws. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 6 2002-09-25 |
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