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| ON Semiconductor ) Medium-Power Plastic PNP Silicon Transistors . . . designed for driver circuits, switching, and amplifier applications. These high-performance plastic devices feature: 2N4918 thru 2N4920 * *ON Semiconductor Preferred Device * Low Saturation Voltage -- * * * * VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp Excellent Power Dissipation Due to Thermopad Construction -- PD = 30 W @ TC = 25_C Excellent Safe Operating Area Gain Specified to IC = 1.0 Amp Complement to NPN 2N4921, 2N4922, 2N4923 3 AMPERE GENERAL-PURPOSE POWER TRANSISTORS 40-80 VOLTS 30 WATTS II I IIIIIIIIIIIIIIIIIIIIIII II II I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II I I II I IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII II II IIIIIIIIIIIIIIIIIIIIIII II I I II II I IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIII III II IIIIIIIIIIIIIIIIIIIIIII IIIIII I I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII I II II IIIIIIIIIIIIIIIIIIIIIII I II II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIII I II II II II II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII *MAXIMUM RATINGS Ratings Symbol VCEO VCB VEB IC* IB 2N4918 40 40 2N4919 60 60 2N4920 80 80 Unit Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage 5.0 1.0 3.0 1.0 Collector Current -- Continuous (1) Base Current Total Power Dissipation @ TC = 25C Derate above 25_C Operating & Storage Junction Temperature Range PD 30 0.24 Watts W/_C _C TJ, Tstg -65 to +150 32 1 STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE CASE 77-09 TO-225AA TYPE THERMAL CHARACTERISTICS (2) Characteristic Symbol Max Unit JC 4.16 _C/W *Indicates JEDEC Registered Data for 2N4918 Series. (1) The 1.0 Amp maximum IC value is based upon JEDEC current gain requirements. The 3.0 Amp maximum value is based upon actual current-handling capability of the device (See Figure 5). (2) Recommend use of thermal compound for lowest thermal resistance. Thermal Resistance, Junction to Case Preferred devices are ON Semiconductor recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2002 1 April, 2002 - Rev. 10 Publication Order Number: 2N4918/D 2N4918 thru 2N4920 40 PD, POWER DISSIPATION (WATTS) 30 20 10 0 25 50 75 100 TC, CASE TEMPERATURE (C) 125 150 Figure 1. Power Derating http://onsemi.com 2 2N4918 thru 2N4920 Cjd << Ceb t2 Vin APPROX -11 V 0 APPROX 9.0 V +4.0 V RB and RC varied to obtain desired current levels t, TIME ( s) II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I I III I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic OFF CHARACTERISTICS Symbol Min Max Unit Collector-Emitter Sustaining Voltage (1) (IC = 0.1 Adc, IB = 0) VCEO(sus) Vdc 2N4918 2N4919 2N4920 40 60 80 -- -- -- -- -- -- Collector Cutoff Current (VCE = 20 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) ICEO mAdc 2N4918 2N4919 2N4920 0.5 0.5 0.5 Collector Cutoff Current (VCE = Rated VCEO, VBE(off) = 1.5 Vdc) (VCE = Rated VCEO, VBE(off) = 1.5 Vdc, TC = 125_C Collector Cutoff Current (VCB = Rated VCB, IE = 0) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) ICEX mAdc -- -- -- -- 0.1 0.5 0.1 1.0 ICBO IEBO mAdc mAdc ON CHARACTERISTICS DC Current Gain (1) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 1.0 Vdc) (IC = 1.0 Adc, VCE = 1.0 Vdc) hFE -- 40 30 10 -- -- -- -- 150 -- 0.6 1.3 1.3 Collector-Emitter Saturation Voltage (1) (IC = 1.0 Adc, IB = 0.1 Adc) Base-Emitter Saturation Voltage (1) (IC = 1.0 Adc, IB = 0.1 Adc) Base-Emitter On Voltage (1) (IC = 1.0 Adc, VCE = 1.0 Vdc) VCE(sat) VBE(sat) VBE(on) Vdc Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz) fT 3.0 -- -- MHz pF -- Cob hfe 100 -- Small-Signal Current Gain (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 kHz) *Indicates JEDEC Registered Data. (1) Pulse Test: PW [ 300 s, Duty Cycle [ 2.0% 25 VBE(off) 0 Vin APPROX -11 V t1 5.0 VCC Vin RC RB SCOPE 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 VCC = 30 V tr VCC = 60 V 3.0 2.0 VCC = 30 V IC/IB = 20 IC/IB = 10, UNLESS NOTED TJ = 25C TJ = 150C VCC = 60 V td VBE(off) = 2.0 V t3 TURN-OFF PULSE t1 < 15 ns 100 < t2 < 500 s t3 < 15 ns DUTY CYCLE 2.0% VCC = 30 V VBE(off) = 0 20 30 10 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 700 1000 Figure 2. Switching Time Equivalent Test Circuit Figure 3. Turn-On Time http://onsemi.com 3 2N4918 thru 2N4920 1.0 0.7 0.5 0.3 0.2 0.1 0.05 0.01 SINGLE PULSE D = 0.5 0.2 P(pk) JC(t) = r(t) JC JC = 4.16C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) JC(t) DUTY CYCLE, D = t1/t2 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 t, TIME (ms) 10 20 30 50 100 200 300 500 1000 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.1 0.07 0.05 0.03 0.02 0.01 0.01 0.02 0.03 0.05 Figure 4. Thermal Response 10 IC, COLLECTOR CURRENT (AMP) 5.0 2.0 1.0 0.5 SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMIT @ TC = 25C PULSE CURVES APPLY BELOW RATED VCEO 2.0 3.0 5.0 7.0 10 20 30 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 70 100 TJ = 150C 5.0 ms 1.0 ms 100 s dc 0.2 0.1 1.0 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - V CE operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 150_C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) v 150_C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure 5. Active-Region Safe Operating Area 5.0 3.0 2.0 t s, STORAGE TIME ( s) 1.0 0.7 0.5 0.3 0.2 IC/IB = 10 5.0 IC/IB = 20 3.0 2.0 t f , FALL TIME ( s) 1.0 0.7 0.5 0.3 0.2 IC/IB = 20 TJ = 25C TJ = 150C VCC = 30 V IB1 = IB2 ts = ts - 1/8 tf TJ = 25C TJ = 150C IB1 = IB2 10 20 30 200 300 50 70 100 IC, COLLECTOR CURRENT (mA) 500 700 1000 IC/IB = 10 0.1 0.07 0.05 0.1 0.07 0.05 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 700 1000 Figure 6. Storage Time Figure 7. Fall Time http://onsemi.com 4 2N4918 thru 2N4920 TYPICAL DC CHARACTERISTICS VCE = 1.0 V TJ = 150C VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000 700 500 hFE, DC CURRENT GAIN 300 200 100 70 50 30 20 10 2.0 3.0 5.0 10 20 30 50 100 200 300 500 IC, COLLECTOR CURRENT (mA) 1000 2000 25C -55C 1.0 0.8 0.6 TJ = 25C 0.4 0.2 0 0.2 0.3 0.5 IC = 0.1 A 0.25 A 0.5 A 1.0 A 1.0 2.0 3.0 5.0 10 20 30 IB, BASE CURRENT (mA) 50 100 200 Figure 8. Current Gain RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS) Figure 9. Collector Saturation Region 108 107 106 105 104 103 ICES VALUES OBTAINED FROM FIGURE 13 0 30 60 90 120 150 IC = 10 ICES VCE = 30 V 1.5 1.2 VOLTAGE (VOLTS) 0.9 0.6 0.3 0 2.0 3.0 5.0 VCE(sat) @ IC/IB = 10 10 20 30 50 100 200 300 500 1000 2000 IC, COLLECTOR CURRENT (mA) VBE(sat) @ IC/IB = 10 VBE @ VCE = 2.0 V TJ = 25C IC ICES IC = 2x ICES TJ, JUNCTION TEMPERATURE (C) Figure 10. Effects of Base-Emitter Resistance Figure 11. "On" Voltage 102 TEMPERATURE COEFFICIENTS (mV/ C) IC, COLLECTOR CURRENT ( A) 101 100 10-1 10-2 104 REVERSE 103 -0.2 -0.1 TJ = 150C +2.5 +2.0 +1.5 +1.0 +0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 2.0 3.0 5.0 VB FOR VBE 10 20 30 50 100 200 300 500 1000 2000 *VC FOR VCE(sat) TJ = -55C to +100C *APPLIES FOR IC/IB < hFE @ VCE + 1.0 V 2 TJ = 100C to 150C 100C IC = ICES 25C FORWARD 0 +0.1 +0.2 VCE = 30 V +0.3 +0.4 +0.5 VBE, BASE-EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 12. Collector Cut-Off Region Figure 13. Temperature Coefficients http://onsemi.com 5 2N4918 thru 2N4920 PACKAGE DIMENSIONS TO-225AA CASE 77-09 ISSUE W -B- U Q F M C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 --MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 --- -A- 123 H K V G S D 2 PL 0.25 (0.010) M J R 0.25 (0.010) A M A M M B M B M STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE http://onsemi.com 6 2N4918 thru 2N4920 Notes http://onsemi.com 7 2N4918 thru 2N4920 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 AN4918/D |
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