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| PNP 2N5883, 2N5884*, NPN 2N5885, 2N5886* Preferred Device Complementary Silicon High-Power Transistors . . . designed for general-purpose power amplifier and switching applications. http://onsemi.com * Low Collector-Emitter Saturation Voltage - * Low Leakage Current * * VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc ICEX = 1.0 mAdc (max) at Rated Voltage Excellent DC Current Gain - hFE = 20 (min) at IC = 10 Adc High Current Gain Bandwidth Product - ft = 4.0 MHz (min) at IC = 1.0 Adc 2N5883 2N5885 60 60 2N5884 2N5886 80 80 25 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 - 80 V 200 W MARKING DIAGRAM II I I IIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIII I II II I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII I I I IIIIIIIIII II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII II IIIIIIIIII I I I IIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIII II II IIIIIIIIIIIIIIIIIII I I II II I IIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIII I II II I I I I II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIII IIII I I II IIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII I I II I II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIII MAXIMUM RATINGS (No Rating Symbol VCEO VCB VEB IC Unit Vdc Vdc Vdc Adc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Peak Base Current 5.0 25 50 IB 7.5 Adc Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range PD 200 1.15 Watts W/C C TJ, Tstg -65 to +200 xxxxxxxxxx CCCCC AWLYYWW CASE 1-07 TO-204AA (TO-3) xx A WL YY WW CCCCC = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Non USA Country Code Preferred devices are recommended choices for future use and best overall value. THERMAL CHARACTERISTICS Characteristic Symbol qJC Max Unit Thermal Resistance, Junction to Case 0.875 C/W 1. Indicates JEDEC registered data. Units and conditions differ on some parameters and re-registration reflecting these changes has been requested. All above values most or exceed present JEDEC registered data. (c) Semiconductor Components Industries, LLC, 2002 1 May, 2002 - Rev. 10 Publication Order Number: 2N5883/D PD, POWER DISSIPATION (WATTS) II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I III I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I II I I II I I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I III I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I II I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I II I I II I I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII *Indicates JEDEC Registered Data. 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 3. fT = |hfe| * ftest. *ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) SWITCHING CHARACTERISTICS DYNAMIC CHARACTERISTICS ON CHARACTERISTICS Fall Time Storage Time Rise Time Collector Cutoff Current Collector-Emitter Saturation Voltage (Note 2) DC Current Gain (Note 2) Small-Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, ftest = 1.0 kHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Current-Gain - Bandwidth Product (Note 3) (IC = 1.0 Adc, VCE = 10 Vdc, ftest = 1.0 MHz) Base-Emitter On Voltage (Note 2) (IC = 10 Adc, VCE = 4.0 Vdc) Base-Emitter Saturation Voltage (Note 2) (IC = 25 Adc, IB = 6.25 Adc) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) Collector Cutoff Current (VCE = 60 Vdc, VBE(off) = 1.5 Vdc) (VCE = 80 Vdc, VBE(off) = 1.5 Vdc) (VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 150C) (VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 150C) Collector-Emitter Sustaining Voltage (Note 2) (IC = 200 mAdc, IB = 0) PNP 2N5883, 2N5884*, NPN 2N5885, 2N5886* (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) 100 125 150 175 200 Characteristic 25 50 75 0 0 25 (VCC = 30 Vdc, IC = 10 Adc, Vd Ad IB1 = IB2 = 1.0 Adc) 10 50 Figure 1. Power Derating http://onsemi.com 75 100 125 150 TC, CASE TEMPERATURE (C) (IC = 3.0 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) (IC = 25 Adc, VCE = 4.0 Vdc) (IC = 15 Adc, IB = 1.5 Adc) (IC = 25 Adc, IB = 6.25 Adc) 2N5883, 2N5884 2N5885, 2N5886 2N5883, 2N5885 2N5884, 2N5886 2N5883, 2N5885 2N5884, 2N5886 2N5883, 2N5885 2N5884, 2N5886 2N5883, 2N5885 2N5884, 2N5886 2N5883, 2N5885 2N5984, 2N5886 175 VCEO(sus) Symbol VCE(sat) VBE(sat) VBE(on) ICBO ICEO IEBO ICEX Cob hFE 200 hfe fT ts tr tf Min 4.0 35 20 4.0 20 60 80 - - - - - - - - - - - - - - - - - 1000 500 Max - 100 0.8 1.0 0.7 1.5 2.5 1.0 4.0 1.0 1.0 1.0 1.0 1.0 10 10 2.0 2.0 - - - - mAdc mAdc mAdc mAdc MHz Unit Vdc Vdc Vdc Vdc pF ms ms ms - - 2 PNP 2N5883, 2N5884*, NPN 2N5885, 2N5886* VCC -30 V 3.0 TO SCOPE tr 20 ns TURN-ON TIME +2.0 V 0 tr 20 ns -11 V 10 to 100 ms 10 RB RL 2.0 1.0 0.7 0.5 t, TIME ( s) TJ = 25C IC/IB = 10 VCC = 30 V VBE(off) = 2 V tr 2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) DUTY CYCLE 2.0% VCC RL -30 V 3.0 TO SCOPE tr 20 ns 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.3 TURN-OFF TIME +9.0 V 0 -11 V tr 20 ns 10 to 100 ms 10 RB VBB td +7.0 V DUTY CYCLE 2.0% FOR CURVES OF FIGURES 3 & 6, RB & RL ARE VARIED. INPUT LEVELS ARE APPROXIMATELY AS SHOWN. FOR NPN, REVERSE ALL POLARITIES. 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMPERES) 20 30 Figure 3. Turn-On Time Figure 2. Switching Time Equivalent Test Circuits http://onsemi.com 3 PNP 2N5883, 2N5884*, NPN 2N5885, 2N5886* 1.0 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.5 0.2 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE 0.05 0.1 0.2 0.5 1.0 2.0 P(pk) qJC(t) = r(t) qJC qJC = 0.875C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) qJC(t) DUTY CYCLE, D = t1/t2 5.0 10 t, TIME (ms) 20 50 100 200 500 1000 2000 0.05 0.02 0.01 0.02 Figure 4. Thermal Response 100 50 20 10 dc 1 ms 5 ms 500 ms 5.0 2.0 1.0 0.5 0.2 0.1 1.0 TJ = 200C SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMAL LIMITATION @ TC = 25C (SINGLE PULSE) CURVES APPLY BELOW RATED VCEO 2N5883, 2N5885 2N5884, 2N5886 2.0 3.0 20 30 50 70 5.0 7.0 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 200C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 200C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. IC, COLLECTOR CURRENT (AMPERES) Figure 5. Active-Region Safe Operating Area 10 7.0 5.0 3.0 t, TIME ( s) 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.3 0.5 0.7 3000 2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) ts ts TJ = 25C VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25C 2000 C, CAPACITANCE (pF) Cib 1000 700 500 300 0.1 Cib Cob tf tf 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMPERES) 20 30 2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 0.2 Cob 50 100 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Turn-Off Time Figure 7. Capacitance http://onsemi.com 4 PNP 2N5883, 2N5884*, NPN 2N5885, 2N5886* PNP DEVICES 2N5883 and 2N5884 1000 700 500 hFE , DC CURRENT GAIN 300 200 100 70 50 30 20 10 0.3 0.5 0.7 1.0 5.0 7.0 10 2.0 3.0 IC, COLLECTOR CURRENT (AMPERES) 20 30 1000 700 500 hFE , DC CURRENT GAIN 300 200 100 70 50 30 20 10 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMPERES) 20 30 25C NPN DEVICES 2N5885 and 2N5886 VCE = 4.0 V TJ = 150C TJ = 150C 25C -55C VCE = 4.0 V -55C Figure 8. DC Current Gain Figure 9. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) TJ = 25C 1.6 IC = 2.0 A 1.2 0.8 0.4 0 0.01 5.0 A 10 A 20 A VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.0 2.0 TJ = 25C 1.6 1.2 0.8 0.4 0 0.01 IC = 2.0 A 5.0 A 10 A 20 A 0.02 0.05 0.1 0.5 1.0 0.2 IB, BASE CURRENT (AMPERES) 2.0 5.0 10 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, COLLECTOR CURRENT (AMPERES) 5.0 10 Figure 10. Collector Saturation Region Figure 11. Collector Saturation Region 2.0 TJ = 25C 1.6 V, VOLTAGE (VOLTS) 1.2 0.8 0.4 VCE(sat) @ IC/IB = 10 0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 VBE(sat) @ IC/IB = 10 VBE @ VCE = 4 V V, VOLTAGE (VOLTS) 2.0 1.6 1.2 0.8 0.4 0 VBE(sat) @ IC/IB = 10 VBE @ VCE = 4 V VCE(sat) @ IC/IB = 10 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 TJ = 25C IC, COLLECTOR CURRENT (AMPERES) IC, COLLECTOR CURRENT (AMPERES) Figure 12. "On" Voltages Figure 13. "On" Voltages http://onsemi.com 5 PNP 2N5883, 2N5884*, NPN 2N5885, 2N5886* PACKAGE DIMENSIONS CASE 1-07 TO-204AA (TO-3) ISSUE Z A N C -T- E D 2 PL SEATING PLANE K M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. 0.13 (0.005) TQ M Y M U V 2 L G 1 -Y- H B DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --21.08 3.84 4.19 30.15 BSC 3.33 4.77 -Q- 0.13 (0.005) M TY M STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR http://onsemi.com 6 PNP 2N5883, 2N5884*, NPN 2N5885, 2N5886* Notes http://onsemi.com 7 PNP 2N5883, 2N5884*, NPN 2N5885, 2N5886* ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 2N5883/D This datasheet has been download from: www..com Datasheets for electronics components. |
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