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| Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725DX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V. QUICK REFERENCE DATA SYMBOL VCESM IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 V Ths 25 C IC = 7.0 A; IB = 1.75 A f = 16 kHz ICsat = 7.0 A; f = 16kHz TYP. 7.0 1.5 MAX. 1700 12 30 45 1.0 2 UNIT V A A W V A s PINNING - SOT399 PIN 1 2 3 base collector emitter DESCRIPTION PIN CONFIGURATION case SYMBOL c b Rbe case isolated 123 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1700 12 30 12 20 200 9 45 150 150 UNIT V A A A A mA A W C C average over any 20 ms period Ths 25 C ESD LIMITING VALUES SYMBOL VC PARAMETER CONDITIONS MIN. MAX. 10 UNIT kV Electrostatic discharge capacitor voltage Human body model (250 pF, 1.5 k) 1 Turn-off current. September 1997 1 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725DX THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to heatsink Junction to ambient CONDITIONS without heatsink compound with heatsink compound in free air TYP. 35 MAX. 3.7 2.8 UNIT K/W K/W K/W ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 C unless otherwise specified SYMBOL Visol PARAMETER Repetitive peak voltage from all three terminals to external heatsink CONDITIONS R.H. 65 % ; clean and dustfree MIN. TYP. MAX. 2500 UNIT V Cisol Capacitance from T2 to external f = 1 MHz heatsink - 22 - pF STATIC CHARACTERISTICS Ths = 25 C unless otherwise specified SYMBOL ICES ICES IEBO BVEBO REB VCEsat VBEsat VF hFE hFE PARAMETER Collector cut-off current 2 CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 C VEB = 7.5 V; IC = 0 A IB = 1 mA VEB = 7.5 V IC = 7.0 A; IB = 1.75 A IC = 7.0 A; IB = 1.75 A IF = 7 A IC = 1 A; VCE = 5 V IC = 7 A; VCE = 1 V MIN. 7.5 0.78 3.8 TYP. 110 13.5 70 0.86 1.4 19 5.8 MAX. 1.0 2.0 1.0 0.95 2.2 7.8 UNIT mA mA mA V V V V Emitter cut-off current Emitter-base breakdown voltage Base-emitter resistance Collector-emitter saturation voltage Base-emitter saturation voltage Diode forward voltage DC current gain DYNAMIC CHARACTERISTICS Ths = 25 C unless otherwise specified SYMBOL PARAMETER Switching times (16 kHz line deflection circuit) ts tf Turn-off storage time Turn-off fall time CONDITIONS ICsat = 7.0 A; LC = 650 H; Cfb = 18 nF; VCC = 162 V; IB(end) = 1.3 A; LB = 2 H; -VBB = 4 V; TYP. MAX. UNIT 1.5 0.14 2 0.3 s s 2 Measured with half sine-wave voltage (curve tracer). September 1997 2 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725DX TRANSISTOR IC DIODE ICsat + 150 v nominal adjust for ICsat t Lc IB IBend t 20us 26us D.U.T. IBend LB Cfb Rbe 64us VCE -VBB t Fig.1. Switching times waveforms (16 kHz). Fig.3. Switching times test circuit. ICsat 90 % IC 100 hFE VCE = 5 V BU2727D/DF Ths = 25 C Ths = 85 C 10 % tf ts IB IBend t 10 t 1 0.01 0.1 1 10 IC / A 100 - IBM Fig.2. Switching times definitions. Fig.4. DC current gain. hFE = f (IC) Parameter Ths (Low and high gain) September 1997 3 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725DX hFE 100 VCE = 1 V BU2727D/DF VBEsat / V 1 IC = 6 A BU2727D/DF Ths = 25 C Ths = 85 C 0.9 10 0.8 0.7 4A Ths = 85 C Ths = 25 C 1 0.01 0.1 1 10 IC / A 100 0.6 0 1 2 3 IB / A 4 Fig.5. DC current gain. hFE = f (IC) Parameter Ths (Low and high gain) Fig.7. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC VCEsat / V BU2727D/DF ts/tf/ us 10 9 8 7 BU2527AFX,DFX 10 Ths = 85 C Ths = 25 C 1 6 IC/IB = 12 IC/IB = 5 5 4 3 2 1 0.1 0.01 0.1 1 10 IC / A 100 0 0 1 2 3 IB / A 4 Fig.6. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB Fig.8. Limit storage and fall time. ts = f (IB); tf = f (IB); Ths = 85C; f = 16 kHz September 1997 4 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725DX 120 110 100 90 80 70 60 50 40 30 20 10 0 PD% Normalised Power Derating with heatsink compound VCC LC IBend VCL LB T.U.T. CFB -VBB 0 20 40 60 80 Ths / C 100 120 140 Fig.9. Normalised power dissipation. PD% = 100PD/PD 25C = f (Ths) Fig.11. Test Circuit RBSOA. VCC = 150 V; -VBB = 1 - 4 V; LC = 1 mH; VCL = 1500 V; LB = 0.5 - 2 H; CFB = 1 - 3 nF; IB(end) = 0.8 - 4 A 10 Zth / (K/W) BU2525AF IC / A 35 30 25 20 15 BU2727A/AF/D/DF 1 0.5 0.2 0.1 0.05 0.02 0.1 Area where fails occur 0.01 D=0 0.001 1E-06 1E-04 1E-02 t/s P D tp tp D= T t 10 5 0 100 VCE / V T 1E+00 1000 1700 Fig.10. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T Fig.12. Reverse bias safe operating area. Tj Tjmax September 1997 5 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725DX MECHANICAL DATA Dimensions in mm Net Mass: 5.88 g 16.0 max 0.7 4.5 10.0 27 max 25.1 25.7 22.5 max 5.1 2.2 max 18.1 min 4.5 1.1 0.4 M 2 3.3 5.8 max 3.0 25 0.95 max 5.45 5.45 3.3 Fig.13. SOT399; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". September 1997 6 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725DX DEFINITIONS Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1997 7 Rev 1.100 |
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