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DN3135
DN3135 N-Channel Depletion-Mode Vertical DMOS FETs
Ordering Information
BVDSX / BVDGX 350V * RDS(ON) (max) 35 IDSS (min) 180mA Order Number / Package TO-236AB** DN3135K1 TO-243AA* DN3135N8 Die*** DN3135NW
Same as SOT-89. Products shipped on 2000 piece carrier tape reels. Product marking for TO-243AA: Product marking for SOT-23:
** Same as SOT-23. Products skipped on 3000 piece carreir tape reels. *** Die in wafer form.
DN1S*
N1S*
Where *= 2-week alpha date code
Features
High input impedance Low input capacitance Fast switching speeds Low on resistance Free from secondary breakdown Low input and output leakage
Where *= 2-week alpha date code
Advanced DMOS Technology
These low threshold depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Applications
Normally-on switches Solid state relays Converters Linear amplifiers Constant current sources Power supply circuits Telecom
Package Options
Drain
Absolute Maximum Ratings
Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds.
10/23/00
D
BVDSX BVDGX 20V -55C to +150C 300C
Note: See Package Outline section for dimensions.
G
Gate
Source
D S
TO-236AB (SOT-23) top view
TO-243AA (SOT-89)
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
1
DN3135
Thermal Characteristics
Package ID (continuous)* 72mA 135mA ID (pulsed) 300mA 300mA Power Dissipation @ TA = 25C 0.36W 1.3W
jc
ja
IDR* 72mA 135mA
IDRM 300mA 300mA
C/W
200 34
C/W
350 97
TO-236AB TO-243AA
* ID (continuous) is limited by max rated Tj.
Mounted on FR4 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate.
Electrical Characteristics (@ 25C unless otherwise specified)
Symbol BVDSX VGS(OFF) VGS(OFF) IGSS ID(OFF) Parameter Drain-to-Souce Breakdown Voltage Gate-to-Source OFF Voltage Change in VGS(OFF) with Temperature Gate Body Leakage Current Drain-to-Source Leakage Current Min 350 -1.5 -3.5 4.5 100 1.0 1.0 IDSS RDS(ON) Saturated Drain-to-Source Current Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 800 140 60 6.0 3.0 120 15 10 10 15 15 20 1.8 V ns ns VDD = 25V, ID = 150mA, RGEN = 25, VGS = 0V to -10V VGS = -5.0V, ISD = 150mA VGS = -5.0V, ISD = 150mA pF VGS = -5.0V, VDS = 25V, f =1.0Mhz 180 35 35 1.1 Typ Max Unit V V mV/C nA A mA mA %/C mm Conditions VGS = -5.0V, ID = 100A VDS = 15V, ID = 10A VDS = 15V, ID = 10A VGS = 20V, VDS = 0V VGS = -5.0V, VDS = Max Rating VGS = -5.0V, VDS = 0.8 Max Rating TA = 125C VGS = 0V, VDS = 15V VGS = 0V, ID = 150mA VGS = -0.8V, ID = 50mA VGS = 0V, ID = 150mA ID = 100mA, VDS=10V
RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr
Notes: 1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
90% INPUT
-10V
PULSE GENERATOR
Rgen
10%
t(ON)
t(OFF) tr td(OFF) tF
td(ON)
VDD
10%
10%
INPUT
OUTPUT
0V
90%
90%
2
1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 * FAX: (408) 222-4895 www.supertex.com
VDD
RL OUTPUT
D.U.T.
10/23/00

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