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| EMF20/UMF20N Transistors Power management (dual transistors) EMF20/UMF20N 2SC4617and DTC144E are housed independently in a EMT6 or UMT6 package. Application Power management circuit External dimensions (Units : mm) EMF20 0.13 ROHM : EMT6 Each lead has same dimensions Structure Silicon epitaxial planar transistor UMF20N Abbreviated symbol : F20 (4) (3) 0.65 1.3 0.65 0.7 0.9 0.5 Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. 0.22 (4) (5) (6) (3) (2) 1.2 1.6 (1) 0.5 0.5 1.0 1.6 0.2 Equivalent circuits (3) (2) (1) (6) 1.25 2.1 0.15 DTr2 R2 (4) ROHM : UMT6 EIAJ : SC-88 (5) R1=47k R2=47k (6) 00.1 R1 Tr1 0.1Min. (1) Each lead has same dimensions Abbreviated symbol :F20 Package, marking, and packaging specifications Type EMF20 UMF20N Package EMT6 UMT6 Marking F20 F20 Code T2R TR Basic ordering unit (pieces) 8000 3000 2.0 (5) (2) 1/4 EMF20/UMF20N Transistors Absolute maximum ratings (Ta=25C) Tr1 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 60 50 7 150 150 (TOTAL) 150 -55 to +150 Unit V V V mA mW C C 120mW per element must not be exceeded. DTr2 Limits Parameter Symbol 50 VCC Supply voltage -10~+40 VIN Input voltage 100 IC Collector current 30 IO Output current 150(TOTAL) PC Power dissipation Tj 150 Junction temperature Tstg -55 to +150 Range of storage temperature 1 Characteristics of built-in transistor. 2 120mW per element must not be exceeded. Each terminal mounted on a recommended land. Unit V V mA mA mW C C 1 2 Electrical characteristics (Ta=25C) Tr1 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol Min. Typ. Max. Unit BVCBO BVCEO BVEBO ICBO IEBO VCE (sat) hFE fT Cob 60 50 7 - - - 180 - - - - - - - - - 180 2 - - - 0.1 0.1 0.4 390 - 3.5 V V V A A V - IC=50A IC=1mA IE=50A VCB=60V VEB=7V IC/IB=50mA/5mA VCE=6V, IC=1mA Conditions MHz VCE=12V, IE=-2mA, f=100MHz PF VCB=12V, IE=0A, f=1MHz DTr2 Parameter Input voltage Output voltage Input current Output current DC current gain Transition frequency Input resistance Resistance ratio Characteristics of built-in transistor. Symbol VI(off) VI(on) VO(on) II IO(off) GI fT R1 R2/R1 Min. - 3.0 - - - 20 - 32.9 0.8 Typ. - - 100 - - - 250 47 1.0 Max. 0.5 - 300 180 500 - - 61.1 1.2 Unit V V mV A nA - MHz k - Conditions VCC=5V, IO=100A VO=0.3V, IO=2mA VO=10mA, II=0.5mA VI=5V VCC=50V, VI=0V VO=5V, IO=5mA VCE=10V, IE=-5mA, f=100MHz - - 2/4 EMF20/UMF20N Transistors Electrical characteristic curves Tr1 50 COLLECTOR CURRENT : IC (mA) VCE=6V COLLECTOR CURRENT : IC (mA) 100 Ta=25C COLLECTOR CURRENT : IC (mA) 20 10 5 80 0.50mA mA 0.45 A m 0.40 0.35mA 0.30mA 10 Ta=25C 30A 27A 8 24A 21A Ta=100C 25C -55C 60 0.25mA 0.20mA 6 18A 15A 2 1 0.5 0.2 0.1 0 0.2 40 0.15mA 0.10mA 4 12A 9A 20 2 6A 3A 0.05mA IB=0A 0 0.4 0.8 1.2 1.6 2.0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 0 0 IB=0A 4 8 12 16 20 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics ( I ) Fig.3 Grounded emitter output characteristics ( II ) 500 500 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) Ta=25C Ta=100C VCE=5V 3V 1V VCE=5V 0.5 Ta=25C DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE 200 200 25C -55C 0.2 100 100 0.1 IC/IB=50 0.05 50 50 20 10 20 20 0.02 0.01 0.2 10 0.2 0.5 1 2 5 10 20 50 100 200 10 0.2 0.5 1 2 5 10 20 50 100 200 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( I ) Fig.5 DC current gain vs. collector current ( II ) Fig.6 Collector-emitter saturation voltage vs. collector current COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 0.5 0.5 Ta=25C IC/IB=10 0.5 IC/IB=50 0.2 0.2 0.2 0.1 0.05 0.1 0.05 IC/IB=50 20 10 0.1 0.05 Ta=100C 25C -55C Ta=100C 25C -55C 0.02 0.02 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 0.01 0.2 0.5 1 2 5 10 20 50 100 200 0.01 0.2 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current ( I ) Fig.8 Collector-emitter saturation voltage vs. collector current ( II ) Fig.9 Collector-emitter saturation voltage vs. collector current ( III ) 3/4 EMF20/UMF20N Transistors 20 BASE COLLECTOR TIME CONSTANT : Cc rbb' (ps) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) TRANSITION FREQUENCY : fT (MHz) 500 Ta=25C VCE=6V 10 Cib Ta=25C f=1MHz IE=0A IC=0A 200 Ta=25C f=32MHZ VCB=6V 100 200 5 50 100 2 Co 20 b 50 -0.5 1 0.2 0.5 1 2 5 10 20 50 10 -0.2 -0.5 -1 -2 -5 -10 -1 -2 -5 -10 -20 -50 -100 EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) EMITTER CURRENT : IE (mA) Fig.10 Gain bandwidth product vs. emitter current Fig.11 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Fig.12 Base-collector time constant vs. emitter current DTr2 100 50 OUTPUT CURRENT : Io (A) VO=0.3V 10m 5m VCC=5V 1k 500 DC CURRENT GAIN : GI VO=5V Ta=100C 25C -40C INPUT VOLTAGE : VI(on) (V) 20 10 5 2 1 500m 200m 100m 100 200 500 1m 2m 5m 10m 20m 50m 100m Ta=-40C 25C 100C 2m Ta=100C 25C 1m -40C 500 200 100 50 20 10 5 2 1 0 200 100 50 20 10 5 2 0.5 1.0 1.5 2.0 2.5 3.0 1 100 200 500 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI(off) (V) OUTPUT CURRENT : IO (A) Fig.9 Input voltage vs. output current (ON characteristics) Fig.10 Output current vs. input voltage (OFF characteristics) Fig.11 DC current gain vs. output current 1 500m OUTPUT VOLTAGE : VO(on) (V) lO/lI=20 Ta=100C 25C -40C 200m 100m 50m 20m 10m 5m 2m 1m 100 200 500 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.12 Output voltage vs. output current 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0 |
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