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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PBSS5130T 30 V, 1 A PNP low VCEsat (BISS) transistor
Product specification 2003 Dec 12
Philips Semiconductors
Product specification
30 V, 1 A PNP low VCEsat (BISS) transistor
FEATURES * Low collector-emitter saturation voltage VCEsat * High collector current capability: IC and ICM * Higher efficiency leading to less heat generation * Reduced printed-circuit board requirements * Cost effective alternative to MOSFETS in specific applications. APPLICATIONS * Power management - DC/DC converters - Supply line switching - Battery charger - LCD backlighting. * Peripheral drivers - Driver in low supply voltage applications (e.g. lamps and LEDs) - Inductive load driver (e.g. relays, buzzers and motors).
handbook, halfpage
PBSS5130T
QUICK REFERENCE DATA SYMBOL VCEO IC ICRP RCEsat PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) repetitive peak collector current equivalent on-resistance MAX. -30 -1 -1.5 220 UNIT V A A m
3 3 1
DESCRIPTION PNP low VCEsat transistor in a SOT23 plastic package.
Top view
2 1 2
MAM256
MARKING TYPE NUMBER PBSS5130T Note 1. * = p : made in Hong Kong * = t : made in Malaysia * = W : made in China. MARKING CODE(1) *3E Fig.1 Simplified outline (SOT23) and symbol.
2003 Dec 12
2
Philips Semiconductors
Product specification
30 V, 1 A PNP low VCEsat (BISS) transistor
ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS5130T - DESCRIPTION plastic surface mounted package; 3 leads
PBSS5130T
VERSION SOT23
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation Tamb 25 C note 1 note 2 Tstg Tj Tamb Notes 1. Device mounted on an FR4 printed-circuit board, single-sided copper, tinplated, standard footprint. 2. Device mounted on an FR4 printed-circuit board, single sided-copper, tinplated, mounting pad for collector 1 cm2. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient note 1 note 2 Notes 1. Device mounted on an FR4 printed-circuit board, single-sided copper, tinplated and standard footprint. 2. Device mounted on an FR4 printed-circuit board, single-sided copper, tinplated and mounting pad for collector 1 cm2. CONDITIONS in free air 417 260 K/W K/W VALUE UNIT storage temperature junction temperature operating ambient temperature - - -65 - -65 300 480 +150 150 +150 mW mW C C C CONDITIONS open emitter open base open collector - - - - - - MIN. MAX. -30 -30 -5 -1 -3 -300 V V V A A mA UNIT
2003 Dec 12
3
Philips Semiconductors
Product specification
30 V, 1 A PNP low VCEsat (BISS) transistor
CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector-base cut-off current emitter-base cut-off current DC current gain CONDITIONS VCB = -30 V; IE = 0 VCB = -30 V; IE = 0; Tj = 150 C VEB = -4 V; IC = 0 VCE = -2 V; IC = -100 mA VCE = -2 V; IC = -500 mA VCE = -2 V; IC = -1 A VCEsat RCEsat VBEon fT Cc Note 1. Pulse test: tp 300 s; 0.02. collector-emitter saturation voltage equivalent on-resistance base-emitter turn-on voltage transition frequency collector capacitance IC = -100 mA; IB = -1 mA IC = -1 A; IB = -50 mA IC = -500 mA; IB = -50 mA; note 1 VCE = -2 V; IC = -100 mA IC = -100 mA; VCE = -10 V; f = 100 MHz VCB = -10 V; IE = Ie = 0; f = 1 MHz MIN. - - - 300 260 210 - - - - 100 -
PBSS5130T
TYP. - - - 450 350 290 - - - - 200 -
MAX. -100 -50 -100 - - - -100 -225 220 -0.75 - 28
UNIT nA A nA
mV mV m V MHz pF
2003 Dec 12
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Philips Semiconductors
Product specification
30 V, 1 A PNP low VCEsat (BISS) transistor
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
PBSS5130T
SOT23
D
B
E
A
X
HE
vMA
3
Q A A1
1
e1 e bp
2
wMB detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1
OUTLINE VERSION SOT23
REFERENCES IEC JEDEC TO-236AB EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28 99-09-13
2003 Dec 12
5
Philips Semiconductors
Product specification
30 V, 1 A PNP low VCEsat (BISS) transistor
DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION
PBSS5130T
This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
II
Preliminary data Qualification
III
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2003 Dec 12
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Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2003
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R75/01/pp7
Date of release: 2003
Dec 12
Document order number:
9397 750 11901

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