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| Phototransistors PNZ123S Silicon NPN Phototransistor Unit : mm For optical control systems 4.10.3 2.00.2 12.5 min. o3.00.2 Can be combined with LN62S to form an photo interrupter Features High sensitivity Low dark current Fast response : tr = 3.5 s (typ.) Small size (o 3) ceramic package o0.30.05 o0.450.05 0.90.15 Absolute Maximum Ratings (Ta = 25C) Parameter Collector to emitter voltage Emitter to collector voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO VECO IC PC Topr Tstg Ratings 20 5 10 50 -25 to +85 -30 to +100 Unit V V mA mW C C 2 1 1: Emitter 2: Collector Electro-Optical Characteristics (Ta = 25C) Parameter Dark current Collector photo current Peak sensitivity wavelength Acceptance half angle Rise time Fall time *1 *2 Symbol ICEO ICE(L) P tr*2 tf*2 VCE = 10V Conditions VCE = 10V, L = 1000 lx*1 VCE = 10V Measured from the optical axis to the half power point VCC = 10V, ICE(L) = 1mA, RL = 100 min 400 typ 1 800 30 3.5 5 max 100 700 Unit nA A nm deg. s s Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) ,,, , ,, 50 RL 1 Phototransistors PNZ123S PC -- Ta 60 1600 ICE(L) -- VCE 10 4 Ta = 25C T = 2856K ICE(L) -- L ICE(L) (A) VCE = 10V Ta = 25C T = 2856K PC (mW) 50 ICE(L) (A) 1200 L =2000 lx 1750 lx 1500 lx 10 3 Collector power dissipation 40 Collector photo current Collector photo current 30 800 1250 lx 1000 lx 400 750 lx 500 lx 250 lx 10 2 20 10 10 0 - 20 0 20 40 60 80 100 0 0 4 8 12 16 20 24 1 10 10 2 10 3 10 4 Ambient temperature Ta (C ) Collector to emitter voltage VCE (V) Illuminance L (lx) ICEO -- Ta 10 3 VCE = 10V 10 4 ICE(L) -- Ta VCE = 10V T = 2856K 100 Spectral sensitivity characteristics VCE = 10V Ta = 25C ICE(L) (A) ICEO (nA) 10 2 Dark current 10 Collector photo current 10 3 1000 lx Relative sensitivity L = 1500 lx S (%) 10 2 - 20 0 20 40 60 80 100 80 60 40 1 20 10 -1 - 20 0 20 40 60 80 100 0 200 400 600 800 1000 1200 Ambient temperature Ta (C ) Ambient temperature Ta (C ) Wavelength (nm) Directivity characteristics 0 100 10 20 10 3 tr -- ICE(L) VCC = 10V Ta = 25C 10 3 tf -- ICE(L) VCC = 10V Ta = 25C 80 70 60 50 40 30 20 Relative sensitivity S (%) 90 30 10 2 10 2 tr (s) 40 50 60 70 80 90 Rise time RL = 1k 500 Fall time 10 tf (s) 10 RL = 1k 500 1 1 100 100 10 -1 10 -2 10 -1 1 10 10 -1 10 -2 10 -1 1 10 Collector photo current ICE(L) (mA) Collector photo current ICE(L) (mA) 2 |
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