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| PIN Photodiodes PNZ313B PIN Photodiode Unit : mm For optical control systems 8.00.5 5.0 7.00.5 Anode mark o1.6 Device center Features Fast response which is well suited to high speed modulated light detection : tr, tf = 50 ns (typ.) High sensitivity, high reliability Peak sensitivity wavelength matched with infrared light emitting diodes : P = 960 nm (typ.) Wide detection area, wide acceptance half angle : = 65 deg. (typ.) Adoption of visible light cutoff resin 13 min. 2.30.3 2-1.20.15 2-0.60.15 0.410.15 2 1 5.080.25 Absolute Maximum Ratings (Ta = 25C) Parameter Reverse voltage (DC) Power dissipation Operating ambient temperature Storage temperature Symbol VR PD Topr Tstg Ratings 30 100 -30 to +85 - 40 to +100 Unit V mW C C 2.80.3 1: Cathode 2: Anode Electro-Optical Characteristics (Ta = 25C) Parameter Dark current Photo current Peak sensitivity wavelength Response time Response time Capacitance between pins Acceptance half angle *1 *2 Symbol ID IL P tr, tf *2 Conditions VR = 10V VR = 10V, L = 1000 VR = 10V VR = 10V, RL = 1k VR = 10V, RL = 100k VR = 0V, f = 1MHz Measured from the optical axis to the half power point lx*1 min 15 typ 5 25 960 50 5 70 65 max 50 Unit nA A nm ns s pF deg. tr, tf*2 Ct Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Switching time measurement circuit Sig.IN VR = 10V (Input pulse) Sig.OUT (Output pulse) RL td tr tf 90% 10% td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) P = 800nm 50 ,,, , ,,, , 1 PIN Photodiodes PNZ313B PD -- Ta 120 10 3 VR = 10V Ta = 25C T = 2856K IL -- L 10 3 VR = 10V ID -- Ta 100 PD (mW) IL (A) 80 Power dissipation Photo current 60 40 1 Dark current 10 2 10 3 10 4 10 ID (nA) 10 2 10 2 10 1 20 0 - 30 0 20 40 60 80 100 10 -1 10 10 -1 - 40 - 20 0 20 40 60 80 100 Ambient temperature Ta (C ) Illuminance L (lx) Ambient temperature Ta (C ) IL -- Ta 160 140 VR = 10V L = 1000 lx T = 2856K 100 Spectral sensitivity characteristics VR = 10V Ta = 25C 100 Directional characteristics Ta = 25C IL (%) S (%) 120 100 80 60 40 20 0 - 40 - 20 Relative photo current Relative sensitivity 40 Relative sensitivity 700 800 900 1000 1100 1200 60 S (%) 80 80 60 40 20 20 0 20 40 60 80 100 0 600 0 80 40 0 40 80 Ambient temperature Ta (C ) Wavelength (nm) Angle (deg.) Ct -- V R 100 10 2 Sig.IN tr , tf -- RL 10 2 VR = 10V Sig. OUT RL 90% 10% ID -- VR Ct (pF) ,, 10 50 80 tr , tf (s) ID (nA) Dark current 10 2 tr td tf Capacitance between pins 10 60 Rise time, Fall time 1 40 1 10 -1 20 0 10 -2 10 -1 1 10 10 2 10 -2 10 -1 1 10 10 -1 0 8 16 24 32 40 48 Reverse voltage VR (V) External load resistance RL (k) Reverse voltage VR (V) 2 |
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