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| P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - MARCH 94 FEATURES * 100 Volt VDS * RDS(on)=8 ZVP2110A D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j :T stg VALUE -100 -230 -3 20 700 -55 to +150 UNIT V mA A V mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) SYMBOL MIN. BV DSS V GS(th) I GSS I DSS I D(on) -750 8 125 100 35 10 7 15 12 15 -100 -1.5 -3.5 20 -1 -100 MAX. UNIT CONDITIONS. V V nA A A mA mS pF pF pF ns ns ns ns V DD -25V, I D=-375mA V DS=-25V, V GS=0V, f=1MHz I D=-1mA, V GS=0V ID=-1mA, V DS= V GS V GS= 20V, V DS=0V V DS=-100 V, V GS=0 V DS=-80 V, V GS=0V, T=125C(2) V DS=-25 V, V GS=-10V V GS=-10V,I D=-375mA V DS=-25V,I D=-375mA Static Drain-Source On-State R DS(on) Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) g fs C iss C oss C rss t d(on) tr t d(off) tf (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. 3-421 Switching times measured with 50 source impedance and <5ns rise time on a pulse generator ( 3 ) ZVP2110A TYPICAL CHARACTERISTICS -1.6 VGS= -20V -16V -12V -10V -9V -8V -0.8 -7V -0.6 -6V -0.4 -0.2 0 0 -10 -20 -30 -40 -5V -4.5V -4V -4V -3.5V -50 -1.6 VGS= -20V -16V -12V -1.2 -1.0 -0.8 -7V -0.6 -0.4 -0.2 0 0 -2 -4 -6 -8 -5V -4.5V -4V -3.5V -10 -6V -10V -9V -8V ID(On) - Drain Current (Amps) ID(On) - Drain Current (Amps) -1.4 -1.2 -1.0 -1.4 VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts) Output Characteristics Saturation Characteristics VDS-Drain Source Voltage (Volts) -8 -1.6 ID(On) Drain Current (Amps) -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0 0 -2 -4 -6 -8 -10 VDS=-10V -6 -4 ID= -0.5A -0.25A 0 0 -2 -4 -6 -8 -0.1A -10 -2 VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts) Voltage Saturation Characteristics RDS(on)-Drain Source On Resistance () Transfer Characteristics 100 2.6 Normalised RDS(on) and VGS(th) 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -40 -20 0 VGS=-10V ID=-0.375A VGS=-4V -5V 10 -7V -10V -20V R ce tan sis Re e urc -So ain Dr Gate Thresh old ) (on DS VGS=VDS ID=-1mA Voltage VG S(t h) 1 10 100 1000 20 40 60 80 100 120 140 160 180C ID-Drain Current (mA) On-resistance v drain current Normalised RDS(on) and VGS(th) vs Temperature 3-422 ZVP2110A TYPICAL CHARACTERISTICS 250 250 VDS=-10V gfs-Transconductance (mS) 200 150 100 50 0 0 -0.2 -0.4 -0.6 -0.8 gfs-Transconductance (mS) 200 150 100 50 0 0 -2 -4 -6 -8 -10 VDS=-10V -1.0 -1.2 -1.4 -1.6 ID- Drain Current (Amps) VGS-Gate Source Voltage (Volts) Transconductance v drain current Transconductance v gate-source voltage VGS-Gate Source Voltage (Volts) 0 -2 -4 -6 -8 -10 -12 -14 -16 0 0.5 1.0 1.5 2.0 2.5 3.0 VDS= -25V -50V -100V ID=- 0.5A 80 C-Capacitance (pF) 60 Ciss 40 20 Coss 0 0 -20 -40 -60 -80 Crss -100 VDS-Drain Source Voltage (Volts) Q-Gate Charge (nC) Capacitance v drain-source voltage Gate charge v gate-source voltage 3-423 |
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