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| 2SD1468S Transistors Muting Transistor (15V, 1A) 2SD1468S Features 1) Low saturation voltage, typically VCE(sat) = 0.08V at Ic / IB = 500mA / 500A. 2) Ideal for low voltage, high current drives. 3) High DC current gain and high current. External dimensions (Unit : mm) SPT 4.0 3.0 2.0 (15Min.) 3Min. 0.45 2.5 5.0 (1) (2) (3) 0.5 0.45 (1)Emitter (2)Collector (3)Base Taping specifications Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCES VEBO IC PC Tj Tstg Limits 30 15 5 1 0.3 150 -55 to +150 Unit V V V A W C C Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 30 15 5 - - - 120 50 - Typ. - - - - - 0.08 - 150 15 Max. - - - 0.5 0.5 0.4 560 - 30 Unit V V V A A V - MHz pF IC=50A IC=1mA IE=50A VCB=20V VEB=4V IC/IB=0.5mA/50mA VCE/IC=3V/0.1A VCE=5V , IE= -50mA , f=100MHz VCE=10V , IE=0A , f=1MHz Conditions Packaging specifications and hFE Type Package hFE Code Basic ordering unit (pieces) 2SD1468S SPT QRS TP 5000 Rev.A 1/3 2SD1834 Transistors Electrical characteristics curves 50 COLLECTOR CURRENT : IC (mA) 140A 120A COLLECTOR CURRENT : IC (mA) 1000 Ta=25C 500 VCE=10V 200 100 50 20 10 5 2 1 10000 5000 Ta=25C DC CURRENT GAIN : hFE 40 100A 80A 2000 1000 500 200 100 50 20 10 30 60A 20 VCE=3V VCE=1V 40A 10 IB=0A 20A 0 0 200 400 600 Ta=25C 800 1000 0 0.2 0.4 0.6 0.8 1.0 1 2 5 10 20 50 100 200 500 1000 COLLECTOR TO EMITTER VOLTAGE : VCE (mV) BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (mA) Fig.1 Ground emitter output characteristics Fig.2 Ground emitter propagation characteristics Fig.3 DC current gain vs. collector current COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) 5000 2000 1000 500 200 100 50 20 10 5 2 1 1 2 5 10 20 50 100 200 500 1000 10000 COLLECTOR CURRENT : IC (mA) IC/IB=50/1 20/1 10/1 500 200 100 50 20 10 5 2 1 0.5 0.2 0.1 0.01 0.02 0.05 0.1 0.2 IC=100mA IC=50mA IC=10mA IC=5mA TRANSITION FREQUENCY : fT (MHz) 10000 COLLECTOR SATURATION VOLTAGE : VCE(saT) (mV) Ta=25C 1000 Ta=25C Ta=25C VCE=5V 1000 500 200 100 50 20 10 5 2 1 0.5 1 2 5 10 20 50 100 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 -200 -500 -1000 BASE CURRENT : IB(mA) EMITTER CURRENT : IE (mA) Fig.4 Collector-emitter saturation voltage vs. collector current Fig.5 Collector-emitter saturation voltage vs. base current Fig.6 Gain bandwidth product vs. emitter current COLLECTOR OUTPUT CAPACITANCE : Cob(pF) 500 200 100 50 20 10 5 2 1 0.1 0.2 EMITTER INPUT CAPACITANCE : Cib(pF) 1000 Ta=25C IE=0A f=1MHz Ta=25C IC=0A f=1MHz ON RESISTANCE : Ron() 100 50 20 10 5 2 1 0.5 0.2 Ta=25C 100 50 20 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 0.5 1 2 5 10 20 50 100 0.1 10 20 50 100 200 500 1000 2000 5000 10000 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) BASE CURRENT : IB (mA) Fig.7 Collector output capacitance vs. collector-base voltage Fig.8 Emitter input capacitance vs. emitter-base voltage Fig.9 "ON" resistance vs. base current characteristics Rev.A 2/3 2SD1834 Transistors R(1k) input Vi 1kHz 100mVrms IB X V output v0 Ron= v0 vi-v0 xRL Fig.10 "ON" resistance measurement circuit Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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