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| a 1 pC Charge Injection, 100 pA Leakage CMOS 5 V/+5 V/+3 V Dual SPDT Switch ADG636 FUNCTIONAL BLOCK DIAGRAM ADG636 S1A 4 6 FEATURES 1 pC Charge Injection 2.7 V to 5.5 V Dual Supply +2.7 V to +5.5 V Single Supply Automotive Temperature Range: -40 C to +125 C 100 pA (Max @ 25 C) Leakage Currents 85 Typ On Resistance Rail-to-Rail Operation Fast Switching Times Typical Power Consumption (<0.1 W) TTL/CMOS Compatible Inputs 14-Lead TSSOP Package APPLICATIONS Automatic Test Equipment Data Acquisition Systems Battery-Powered Instruments Communication Systems Sample-and-Hold Systems Remote Powered Equipment Audio and Video Signal Routing Relay Replacement Avionics D1 S1B 5 S2A 11 9 S2B 10 D2 LOGIC 1 14 2 A0 A1 EN GENERAL DESCRIPTION PRODUCT HIGHLIGHTS The ADG636 is a monolithic device, comprising two independently selectable CMOS SPDT (Single Pole, Double Throw) switches. When on, each switch conducts equally well in both directions. The ADG636 operates from a dual 2.7 V to 5.5 V supply, or from a single supply of +2.7 V to +5.5 V. This switch offers ultralow charge injection of 1.5 pC over the entire signal range and leakage current of 10 pA typical at 25C. It offers on-resistance of 85 typ, which is matched to within 2 between channels. The ADG636 also has low power dissipation yet gives high switching speeds. The ADG636 exhibits break-before-make switching action and is available in a 14-lead TSSOP package. 1. Ultralow Charge Injection (QINJ: 1.5 pC typ over full signal range) 2. Leakage Current <0.25 nA max @ 85C 3. Dual 2.7 V to 5 V or Single +2.7 V to +5.5 V Supply 4. Automotive Temperature Range: -40C to +125C 5. Small 14-Lead TSSOP Package REV. 0 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 (c) Analog Devices, Inc., 2002 ADG636-SPECIFICATIONS DUAL SUPPLY1 (V Parameter ANALOG SWITCH Analog Signal Range On Resistance (RON) On Resistance Match Between Channels (DRON) On Resistance Flatness (R FLAT(ON)) LEAKAGE CURRENTS Source OFF Leakage IS (OFF) Drain OFF Leakage I D (OFF) Channel ON Leakage I D, IS (ON) DIGITAL INPUTS Input High Voltage, V INH Input Low Voltage, VINL Input Current IINL or IINH CIN, Digital Input Capacitance DYNAMIC CHARACTERISTICS Transition Time tON Enable tOFF Enable Break-Before-Make Time Delay, tBBM Charge Injection Off Isolation Channel-to-Channel Crosstalk Bandwidth -3 dB CS (OFF) CD (OFF) CD, CS (ON) POWER REQUIREMENTS I DD ISS 2 DD = 5V 10%, VSS = -5 V +25 C 10%, GND = 0 V. All specifications -40 C to +125 C unless noted.) -40 C to +85 C -40 C to +125 C VSS to VDD Unit V typ max typ max typ max nA typ nA max nA typ nA max nA typ nA max V min V max A typ A max pF typ ns typ ns max ns typ ns max ns typ ns max ns typ ns min pC typ dB typ dB typ MHz typ pF typ pF typ pF typ A typ A max A typ A max VIN = VINL or VINH VDD = +4.5 V, VSS = -4.5 V VS = 3 V, IS = -1 mA, Test Circuit 1 VS = 3 V, IS = -1 mA VS = 3 V, IS = -1 mA VDD = +5.5 V, VSS = -5.5 V VS = 4.5 V, VD = 4.5 V, Test Circuit 2 VS = 4.5 V, VD = 4.5 V, Test Circuit 2 VS = VD = 4.5 V, Test Circuit 3 Test Conditions/Comments 85 115 2 4 25 40 0.01 0.1 0.01 0.1 0.01 0.1 140 160 5.5 55 6.5 60 0.25 0.25 0.25 2 2 6 2.4 0.8 0.005 0.1 2 70 100 100 135 55 80 20 -1.2 -65 -65 610 5 8 8 0.001 1.0 0.001 1.0 120 170 90 150 190 100 10 VS1A = +3 V, VS1B = -3 V, RL = 300 , CL = 35 pF, Test Circuit 4 RL = 300 , CL = 35 pF VS = 3 V, Test Circuit 5 RL = 300 , CL = 35 pF VS = 3 V, Test Circuit 5 RL = 300 , CL = 35 pF, VS = 3 V, Test Circuit 5 VS = 0 V, RS = 0 , CL = 1 nF, Test Circuit 7 RL = 50 , CL = 5 pF, f = 10 MHz, Test Circuit 8 RL = 50 , CL = 5 pF, f = 10 MHz, Test Circuit 10 RL = 50 , CL = 5 pF, Test Circuit 9 f = 1 MHz f = 1 MHz f = 1 MHz VDD = +5.5 V, VSS = -5.5 V Digital Inputs = 0 V or 5.5 V Digital Inputs = 0 V or 5.5 V NOTES 1 Y Version Temperature Range: -40C to +125C 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice. -2- REV. 0 ADG636 SINGLE SUPPLY1 (V Parameter ANALOG SWITCH Analog Signal Range On Resistance (RON) On Resistance Match Between Channels (RON) LEAKAGE CURRENTS Source OFF Leakage I S (OFF) Drain OFF Leakage I D (OFF) Channel ON Leakage I D, IS (ON) DIGITAL INPUTS Input High Voltage, V INH Input Low Voltage, VINL Input Current IINL or IINH CIN, Digital Input Capacitance DYNAMIC CHARACTERISTICS Transition Time tON Enable tOFF Enable Break-Before-Make Time Delay, t BBM Charge Injection Off Isolation Channel-to-Channel Crosstalk Bandwidth -3 dB CS (OFF) CD (OFF) CD, CS (ON) POWER REQUIREMENTS IDD 0.001 1.0 NOTES 1 Y Version Temperature Range: -40C to +125C 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice. 2 DD =5V 10%, VSS = 0 V, GND = 0 V. All specifications -40 C to +125 C unless otherwise noted.) +25 C -40 C to +85 C -40 C to +125 C 0 V to VDD 210 290 3 12 0.01 0.1 0.01 0.1 0.01 0.1 13 Unit V typ max typ max nA typ nA max nA typ nA max nA typ nA max V min V max A typ A max pF typ ns typ ns max ns typ ns max ns typ ns max ns typ ns min pC typ dB typ dB typ MHz typ pF typ pF typ pF typ VIN = VINL or VINH VDD = 4.5 V, VSS = 0 V VS = 3.5 V, IS = -1 mA, Test Circuit 1 VS = 3.5 V, IS = -1 mA VDD = 5.5 V VS = 1 V/4.5 V, VD = 4.5 V/1 V, Test Circuit 2 VS = 1 V/4.5 V, VD = 4.5 V/1 V Test Circuit 2 VS = VD = 4.5 V/1 V, Test Circuit 3 Test Conditions/Comments 350 380 0.25 0.25 0.25 2 2 6 2.4 0.8 0.005 0.1 2 90 150 135 180 70 105 30 0.3 -60 -65 530 5 8 8 185 235 120 210 275 135 10 VS1A = 3 V, VS1B = 0 V, RL = 300 , CL = 35 pF, Test Circuit 4 RL = 300 , CL = 35 pF VS = 3 V, Test Circuit 5 RL = 300 , CL = 35 pF VS = 3 V, Test Circuit 5 RL = 300 , CL = 35 pF, VS = 3 V, Test Circuit 5 VS = 0 V, RS = 0 , CL = 1 nF, Test Circuit 7 RL = 50 , CL = 5 pF, f = 10 MHz, Test Circuit 8 RL = 50 , CL = 5 pF, f = 10 MHz, Test Circuit 10 RL = 50 , CL = 5 pF, Test Circuit 9 f = 1 MHz f = 1 MHz f = 1 MHz VDD = 5.5 V Digital Inputs = 0 V or 5.5 V A typ A max REV. 0 -3- ADG636 SINGLE SUPPLY1 (V Parameter ANALOG SWITCH Analog Signal Range On Resistance (R ON) On Resistance Match Between Channels (RON) LEAKAGE CURRENTS Source OFF Leakage I S (OFF) Drain OFF Leakage I D (OFF) Channel ON Leakage I D, IS (ON) 380 420 DD =3V 10%, VSS = 0 V, GND = 0 V. All specifications -40 C to +125 C unless otherwise noted.) +25 C -40 C to +85 C -40 C to +125 C 0 V to VDD 460 5 0.01 0.1 0.01 0.1 0.01 0.1 Unit V typ typ nA typ nA max nA typ nA max nA typ nA max VDD = 2.7 V, VSS = 0 V VS = 1.5 V, IS = -1 mA, Test Circuit 1 VS = 1.5 V, IS = -1 mA VDD = 3.3 V VS = 1 V/3 V, VD = 3 V/1 V, Test Circuit 2 VS = 1 V/3 V, VD = 3 V/1 V, Test Circuit 2 VS = VD = 1 V/3 V, Test Circuit 3 Test Conditions/Comments 0.25 0.25 0.25 2 2 6 DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH CIN, Digital Input Capacitance DYNAMIC CHARACTERISTICS Transition Time tON Enable tOFF Enable Break-Before-Make Time Delay, t BBM Charge Injection Off Isolation Channel-to-Channel Crosstalk Bandwidth -3 dB CS (OFF) CD (OFF) CD, CS (ON) POWER REQUIREMENTS IDD 2 2.0 0.8 0.005 0.1 2 170 320 250 360 110 175 80 0.6 -60 -65 530 5 8 8 V min V max A typ A max pF typ ns typ ns max ns typ ns max ns typ ns max ns typ ns min pC typ VIN = VINL or VINH 390 460 205 450 530 230 10 VS1A = 2 V, VS1B = 0 V, RL = 300 , CL = 35 pF, Test Circuit 4 RL = 300 , CL = 35 pF VS = 2 V, Test Circuit 6 RL = 300 , CL = 35 pF VS = 2 V, Test Circuit 6 RL = 300 , CL = 35 pF, VS1 = 2 V, Test Circuit 5 VS = 0 V, RS = 0 , CL = 1 nF, Test Circuit 7 dB typ RL = 50 , CL = 5 pF, f = 10 MHz, Test Circuit 8 dB typ RL = 50 , CL = 5 pF, f = 10 MHz, Test Circuit 10 MHz typ RL = 50 , CL = 5 pF, Test Circuit 9 pF typ f = 1 MHz pF typ f = 1 MHz pF typ f = 1 MHz VDD = 3.3 V Digital Inputs = 0 V or 3.3 V 0.001 1.0 A max A typ NOTES 1 Y Version Temperature Range: -40C to +125C 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice. -4- REV. 0 ADG636 ABSOLUTE MAXIMUM RATINGS 1 (TA = 25C unless otherwise noted) VDD to VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 V VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . -0.3 V to +6.5 V VSS to GND . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to -6.5 V Analog Inputs2 . . . . . . . . . . . . . . . . VSS - 0.3 V to VDD + 0.3 V Digital Inputs2 . . . . . . . . . . . . . . . . -0.3 V to VDD + 0.3 V or 30 mA, Whichever Occurs First Peak Current, S or D (Pulsed at 1 ms, 10% Duty Cycle max) . . . . . . . . . . 20 mA Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . 10 mA Operating Temperature Range Automotive (Y Version) . . . . . . . . . . . . . . -40C to +125C Storage Temperature Range . . . . . . . . . . . . -65C to +150C Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . 150C TSSOP Package JA Thermal Impedance . . . . . . . . . . . . . . . . . . . . 150C/W JC Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 27C/W Lead Temperature, Soldering (10 seconds) . . . . . . . . . . 300C IR Reflow, Peak Temperature . . . . . . . . . . . . . . . . . . 220C NOTES 1 Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum rating may be applied at any one time. 2 Overvoltages at EN, A0, A1, S, or D will be clamped by internal diodes. Current should be limited to the maximum ratings given. ORDERING GUIDE Model ADG636YRU Temperature Range -40C to +125C Package Description Thin Shrink Small Outline (TSSOP) Package Option RU-14 PIN CONFIGURATION Table I. Truth Table A1 A0 1 EN 2 14 13 A0 X 0 1 0 1 EN 0 1 1 1 1 ON Switch NONE S1A, S2A S1B, S2A S1A, S2B S1B, S2B A1 GND 12 VDD VSS 3 TOP VIEW S1A 4 (Not To Scale) 11 S2A ADG636 S1B 5 D1 6 NC 7 10 9 8 S2B D2 NC X 0 0 1 1 NC = NO CONNECT CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the ADG636 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. WARNING! ESD SENSITIVE DEVICE REV. 0 -5- ADG636 TERMINOLOGY VDD VSS GND IDD ISS S D RON RON RFLAT(ON) IS (OFF) ID (OFF) ID, IS (ON) VD , VS VINL VINH IINL(IINH) CS (OFF) CD (OFF) CD, CS (ON) CIN tON(EN) tOFF(EN) tTRANSITION tBBM Charge Injection Crosstalk Off Isolation Bandwidth Insertion Loss Most Positive Power Supply Potential Most Negative Power Supply in a Dual Supply Application. In single supply applications, this should be tied to ground at the device. Ground (0 V) Reference Positive Supply Current Negative Supply Current Source Terminal. May be an input or output. Drain Terminal. May be an input or output. Ohmic Resistance between D and S On Resistance Match between any two channels (i.e., RON max - RON min) Flatness is defined as the difference between the maximum and minimum value of On Resistance as measured over the specified analog signal range. Source Leakage Current with the Switch "OFF" Drain Leakage Current with the Switch "OFF" Channel Leakage Current with the Switch "ON" Analog Voltage on Terminals D, S Maximum Input Voltage for Logic "0" Minimum Input Voltage for Logic "1" Input Current of the Digital Input Channel Input Capacitance for "OFF" condition. Channel Output Capacitance for "OFF" condition. "ON" Switch Capacitance Digital Input Capacitance Delay time between the 50% and 90% points of the digital input and Switch "ON" condition Delay time between the 50% and 90% points of the digital input and Switch "OFF" condition Delay time between the 50% and 90% points of the digital input and Switch "ON" condition when switching from one address state to another. "OFF" time or "ON" time measured between the 80% points of both switches, when switching from one address state to another. A measure of the Glitch Impulse transferred from the Digital Input to the Analog Output during switching. A measure of unwanted signal that is coupled through from one channel to another as a result of parasitic capacitance. A measure of unwanted signal coupling through an "OFF" switch. The Frequency Response of the "ON" Switch Loss Due to the On Resistance of the Switch -6- REV. 0 Typical Performance Characteristics-ADG636 250 TA = 25 C 200 VDD , V SS = 2.5V 150 VDD , V SS = 3.3V 100 VDD , VSS = 3V 300 350 VDD = 5V VSS = 0V 250 ON RESISTANCE - ON RESISTANCE - 200 TA = +125 C 150 TA = +85 C 50 VDD , V SS = 5V VDD , V SS = 4.5V 100 TA = -40 C 50 TA = +25 C 0 -5 -4 -3 -2 -1 0 VD , VS - V 1 2 3 4 5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VD , VS - V TPC 1. On Resistance vs. VD (VS). Dual Supply TPC 4. On Resistance vs. VD (VS) for Different Temperatures. Single Supply 5 600 TA = 25 C VSS = 0V VDD = 2.7V 3 1 -1 ID (OFF) 500 ON RESISTANCE - CURRENT - nA 400 VDD = 3V 300 VDD = 4.5V 200 VDD = 3.3V 100 VDD = 5V IS (OFF) -3 -5 ID , I S (ON) -7 -9 -11 -13 VDD = +5V VSS = -5V 0 20 40 60 80 100 120 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -15 VD , VS - V TEMPERATURE - C TPC 2. On Resistance vs. VD (VS). Single Supply 180 160 140 VDD = +5V VSS = -5V TPC 5. Leakage Currents vs. Temperatures. Dual Supply 5 3 1 -1 IS (OFF) ON RESISTANCE - CURRENT - nA 120 100 80 60 40 TA = +25 C 20 0 -5 TA = -40 C TA = +125 C -3 -5 -7 -9 -11 -13 VDD = 5V VSS = 0V 0 20 40 60 80 TEMPERATURE - C ID (OFF) TA = +85 C ID , I S (ON) -4 -3 -2 -1 0 VD , V S - V 1 2 3 4 5 -15 100 120 TPC 3. On Resistance vs. VD (VS) for Different Temperatures. Dual Supply TPC 6. Leakage Currents vs. Temperature. Single Supply REV. 0 -7- ADG636 1.0 TA = 25 C 0.5 CHARGE INJECTION - pC 0 TA = 25 C VDD = 3V VSS = 0V ATTENUATION - dB -10 -20 -30 -40 -50 -60 -70 -80 VDD = +5V VSS = -5V VDD = +5V VSS = 0V 0 -0.5 VDD = 5V VSS = 0V -1.0 VDD = +5V VSS = -5V -1.5 -2.0 -5 -4 -3 -2 -1 0 VS - V 1 2 3 4 5 -90 0.3 1 10 FREQUENCY - MHz 100 1000 TPC 7. Charge Injection vs. Source Voltage 250 TA = 25 C 200 ATTENUATION - dB TPC 10. Crosstalk vs. Frequency 0 TA = 25 C -2 VDD = +5V VSS = -5V VDD = 5V VSS = 0V TIME - ns -4 -6 -8 -10 -12 -14 VDD = +5V VSS = 0V 150 VDD = +5V VSS = -5V tON 100 tOFF 50 VDD = 5V VSS = 0V 0 -40 -20 0 20 40 60 TEMPERATURE - C VDD = +5V VSS = -5V 80 100 120 -16 -18 0.3 1 10 FREQUENCY - MHz 100 1000 TPC 8. tON/tOFF Enable Timing vs. Temperature 0 TA = 25 C -10 -20 TPC 11. On Response vs. Frequency ATTENUATION - dB -30 -40 -50 -60 -70 -80 -90 0.3 VDD = +5V VSS = 0V VDD = +5V VSS = -5V 1 10 100 FREQUENCY - MHz 1000 TPC 9. Off Isolation vs. Frequency -8- REV. 0 ADG636 Test Circuits IDS V1 S VS D VS IS (OFF) A S D ID (OFF) A VD NC S D ID (ON) A VD RON = V1/IDS Test Circuit 1. On Resistance Test Circuit 2. Off Leakage Test Circuit 3. On Leakage VDD 0.1 F VSS 0.1 F ADDRESS DRIVE (VIN) S1A S1B VS1A VS1B VOUT D1 VOUT RL 300 CL 35pF 90% 90% 3V 50% 0V 50% VDD A1 A0 VSS VS 50 tTRANSITION tTRANSITION 2.4V EN GND Test Circuit 4. Transition Time, tTRANSITION VDD 0.1 F VSS 0.1 F 3V 0V VDD A0 A1 VSS S1A S1B VS ADDRESS DRIVE (VIN) VS 50 VOUT D1 2.4V EN GND RL 300 CL 35pF VOUT 80% 80% tBBM Test Circuit 5. Break-Before-Make Delay, tBBM VDD 0.1 F VSS 0.1 F 3V 50% 0V 50% VDD A0 A1 VSS S1A S1B VS ENABLE DRIVE (VIN) V0 OUTPUT EN VS 50 GND D1 RL 300 CL 35pF VOUT 0V 0.9V0 0.9V0 tON(EN) tOFF(EN) Test Circuit 6. Enable Delay, tON (EN), tOFF (EN) REV. 0 -9- ADG636 VDD VSS VOUT VDD RS VS DECODER GND SW OFF CL S VSS D CL 1nF VOUT VIN QINJ = CL VOUT VOUT SW OFF SW ON SW ON SW ON SW OFF A1 A2 EN VIN SW OFF CHARGE INJECTION = VOUT Test Circuit 7. Charge Injection VDD 0.1 F VSS 0.1 F 0.1 F VDD VSS 0.1 F NETWORK ANALYZER VDD S VSS NETWORK ANALYZER VDD VSS S 50 D 50 VS VOUT 50 VS D RL 50 VOUT GND RL 50 GND OFF ISOLATION = 20 LOG VOUT VS INSERTION LOSS = 20 LOG VOUT WITH SWITCH VOUT WITHOUT SWITCH Test Circuit 8. Off Isolation Test Circuit 9. Bandwidth VDD 0.1 F NETWORK ANALYZER VOUT VSS 0.1 F VDD S1 VSS RL 50 S2 50 VS GND D RL 50 CHANNEL-TO-CHANNEL CROSSTALK = 20 LOG VOUT VS Test Circuit 10. Channel-to-Channel Crosstalk -10- REV. 0 ADG636 OUTLINE DIMENSIONS Dimensions shown in inches and (mm). 14-Lead TSSOP Package (RU-14) 0.201 (5.10) 0.193 (4.90) 14 8 0.177 (4.50) 0.169 (4.30) 0.256 (6.50) 0.246 (6.25) 1 7 PIN 1 0.006 (0.15) 0.002 (0.05) 0.0433 (1.10) MAX SEATING PLANE 0.0256 (0.65) BSC 0.0118 (0.30) 0.0075 (0.19) 0.0079 (0.20) 0.0035 (0.090) 8 0 0.028 (0.70) 0.020 (0.50) REV. 0 -11- -12- C02754-0-1/02(0) PRINTED IN U.S.A. This datasheet has been download from: www..com Datasheets for electronics components. |
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