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Advance Technical Information
HiPerRFTM Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr
IXFH 12N100F VDSS IXFT 12N100F ID25 RDS(on)
= 1000 V = 12 A = 1.05
trr 250 ns
TO-247 AD (IXFH) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-247 TO-247 TO-268 Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS TJ 150C, RG = 2 TC = 25C Maximum Ratings
(TAB)
1000 1000 20 30 12 48 12 30 1.0 5 300 -55 ... +150 150 -55 ... +150 300
V V V V A A A mJ J V/ns W C C C C
G = Gate, S = Source,
TO-268 (IXFT) Case Style
G S D = Drain, TAB = Drain
(TAB)
1.13/10 Nm/lb.in. 6 4 g g
Features l RF capable MOSFETs l Double metal process for low gate resistance l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Applications l DC-DC converters l Switched-mode and resonant-mode power supplies, >500kHz switching l DC choppers l 13.5 MHz industrial applications l Pulse generation l Laser drivers l RF amplifiers Advantages l Space savings l High power density
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1000 3.0 V 5.5 V 100 nA 50 A 1.5 mA 1.05
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 1mA VDS = VGS, ID = 4mA VGS = 20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 Note 1 TJ = 125C
(c) 2001 IXYS All rights reserved
98856 (8/01)
IXFH 12N100F IXFT 12N100F
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Note 1 8 12 2700 VGS = 0 V, VDS = 25 V, f = 1 MHz 305 93 12 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 2.0 (External) 9.8 31 12 77 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 16 42 0.42 (TO-247) 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W
Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 2.87 3.12 b2 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
1 2 3
TO-247 AD Outline
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
V DS = 10 V; ID = 0.5 ID25
Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions V GS = 0 V Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Note 1
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 12 48 1.5 250 A A V ns C A
TO-268 Outline
IF = IS,-di/dt = 100 A/s, VR = 100 V
0.8 7
Note: 1. Pulse test, t 300 s, duty cycle d 2 % Min Recommended Footprint
Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4
Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10
Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025

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