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| SKM 400GB125D Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMITRANSTM 3 Ultra Fast IGBT Modules SKM 400GB125D SKM 400GAL125D SKM 400GAR125D Inverse diode Freewheeling diode Characteristics Symbol Conditions IGBT min. typ. max. Units Features Typical Applications Inverse diode FWD Thermal characteristics Mechanical data GB GAL GAR 1 20-09-2005 RAA (c) by SEMIKRON SKM 400GB125D Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 2 20-09-2005 RAA (c) by SEMIKRON SKM 400GB125D Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT Zthp(j-c) = f (tp); D = tp/tc = tp*f Fig. 10 Transient thermal impedance of FWD Zthp(j-c) = f (tp); D = tp/tc = tp*f Fig. 11 CAL diode forward characteristic 3 20-09-2005 RAA (c) by SEMIKRON SKM 400GB125D UL Recognized File no. E 63 532 Dimensions in mm This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 20-09-2005 RAA (c) by SEMIKRON |
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