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| SM-8 COMPLEMENTARY MEDIUM POWER TRANSISTORS ISSUE 1 - NOVEMBER 1995 ZDT6757 C1 C1 C2 C2 PARTMARKING DETAIL T6757 B1 E1 B2 E2 NPN PNP SM-8 (8 LEAD SOT223) ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current SYMBOL VCBO VCEO VEBO ICM IC NPN 300 300 5 1 0.5 PNP -300 -300 -5 -1 -0.5 UNIT V V V A A C Operating and Storage Temperature Range Tj:Tstg -55 to +150 THERMAL CHARACTERISTICS PARAMETER Total Power Dissipation at Tamb = 25C* Any single die on Both die on equally Derate above 25C* Any single die on Both die on equally Thermal Resistance - Junction to Ambient* Any single die on Both die on equally SYMBOL Ptot VALUE 2.25 2.75 18 22 55.6 45.5 UNIT W W mW/ C mW/ C C/ W C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. 3 - 378 ZDT6757 NPN TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cobo 50 40 30 20 MHz pF MIN. 300 300 5 100 100 0.5 1 1 TYP. MAX. UNIT V V V nA nA V V V CONDITIONS. IC=100A, IE=0 IC=10mA, IB=0* IE=100A, IC=0 VCB=200V, IE=0 VEB=3V, IC=0 IC=100mA, IB=10mA* IC=100mA, IB=10mA* IC=100mA, VCE=5V* IC=100mA, VCE=5V IC=10mA, VCE=5V IC=10mA, VCE=20V f=20MHz VCB=20V, f=1MHz *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% For typical characteristics graphs see FZT657 datasheet. 3 - 379 ZDT6757 PNP TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cobo 50 40 30 20 MHz pF MIN. -300 -300 -5 TYP. MAX. UNIT V V V nA nA nA V V V CONDITIONS. IC=-100A, IE=0 IC=-10mA, IB=0* IE=-100A, IC=0 VCB=-160V, IE=0 VCB=-200V, IE=0 VEB=-3V, IC=0 IC=-100mA, IB=-10mA* IC=-100mA, IB=-10mA* IC=-100mA, VCE=-5V* IC=-100mA, VCE=-5V* IC=-10mA, VCE=-5V* IC=-10mA, VCE=-20V f=20MHz VCB=-20V, f=1MHz -100 -100 -0.5 -1.0 -1.0 *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% For typical characteristics graphs see FZT757 datasheet. 3 - 380 |
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